Справочник транзисторов. MJE13003L6

 

Биполярный транзистор MJE13003L6 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MJE13003L6
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 50 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 900 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 530 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 1.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 5 MHz
   Статический коэффициент передачи тока (hfe): 10
   Корпус транзистора: TO126F

 Аналоги (замена) для MJE13003L6

 

 

MJE13003L6 Datasheet (PDF)

 ..1. Size:284K  foshan
mje13003l6.pdf

MJE13003L6
MJE13003L6

MJE13003L6(3DD13003L6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

 5.1. Size:277K  foshan
mje13003l1.pdf

MJE13003L6
MJE13003L6

MJE13003L1(3DD13003L1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

 5.2. Size:309K  foshan
mje13003lf5.pdf

MJE13003L6
MJE13003L6

MJE13003LF5(3DD13003LF5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

 5.3. Size:283K  foshan
mje13003l5.pdf

MJE13003L6
MJE13003L6

MJE13003L5(3DD13003L5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

 5.4. Size:251K  foshan
mje13003lf1.pdf

MJE13003L6
MJE13003L6

MJE13003LF1(3DD13003LF1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

 5.5. Size:286K  foshan
mje13003l3.pdf

MJE13003L6
MJE13003L6

MJE13003L3(3DD13003L3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

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