Справочник транзисторов. MJE13003M5

 

Биполярный транзистор MJE13003M5 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MJE13003M5
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 50 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 1.8 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 5 MHz
   Статический коэффициент передачи тока (hfe): 10
   Корпус транзистора: TO126

 Аналоги (замена) для MJE13003M5

 

 

MJE13003M5 Datasheet (PDF)

 ..1. Size:187K  foshan
mje13003m5.pdf

MJE13003M5 MJE13003M5

MJE13003M5(3DD13003M5) NPN /SILICON NPN TRANSISTOR: Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 700 VVCEO

 5.1. Size:197K  foshan
mje13003m7.pdf

MJE13003M5 MJE13003M5

MJE13003M7(3DD13003M7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 5.2. Size:191K  foshan
mje13003m8.pdf

MJE13003M5 MJE13003M5

MJE13003M8(3DD13003M8) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 5.3. Size:189K  foshan
mje13003m6.pdf

MJE13003M5 MJE13003M5

MJE13003M6(3DD13003M6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 5.4. Size:194K  foshan
mje13003m3.pdf

MJE13003M5 MJE13003M5

MJE13003M3(3DD13003M3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 5.5. Size:182K  foshan
mje13003m1.pdf

MJE13003M5 MJE13003M5

MJE13003M1(3DD13003M1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

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