Справочник транзисторов. MJE13003VH1

 

Биполярный транзистор MJE13003VH1 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MJE13003VH1
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 400 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 4 MHz
   Статический коэффициент передачи тока (hfe): 10
   Корпус транзистора: TO92

 Аналоги (замена) для MJE13003VH1

 

 

MJE13003VH1 Datasheet (PDF)

 ..1. Size:196K  foshan
mje13003vh1.pdf

MJE13003VH1 MJE13003VH1

MJE13003VH13DD13003VH1 NPN /SILICON NPN TRANSISTOR RoHS Purpose:High voltage capability,high speed switching,wide soa,RoHS compliant. 110V Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast.

 4.1. Size:203K  foshan
mje13003vh5.pdf

MJE13003VH1 MJE13003VH1

MJE13003VH53DD13003VH5 NPN /SILICON NPN TRANSISTOR RoHS Purpose:High voltage capability,high speed switching,wide soa,RoHS compliant. 110V Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast.

 5.1. Size:418K  blue-rocket-elect
mje13003vk1.pdf

MJE13003VH1 MJE13003VH1

MJE13003VK1(BR3DD13003VK1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications 110V Suitable for 110V circuit mode, fluore

 5.2. Size:446K  blue-rocket-elect
mje13003vk7.pdf

MJE13003VH1 MJE13003VH1

MJE13003VK7(BR3DD13003VK7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features RoHS High voltage capability, high speed switching, wide soa, RoHS compliant. / Applications 110V

 5.3. Size:230K  foshan
mje13003vk3.pdf

MJE13003VH1 MJE13003VH1

MJE13003VK3(3DD13003VK3) NPN /SILICON NPN TRANSISTOR RoHS Purpose: High voltage capability, high speed switching, wide soa, RoHS compliant. 110V Features: Suitable for 110V circuit mode, fluorescent lamp, electronic ballast.

 5.4. Size:237K  foshan
mje13003vg1.pdf

MJE13003VH1 MJE13003VH1

MJE13003VG1(3DD13003VG1) NPN /SILICON NPN TRANSISTOR:Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 400 VVCE

 5.5. Size:384K  foshan
mje13003vn5.pdf

MJE13003VH1 MJE13003VH1

MJE13003VN5(3DD13003VN5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

 5.6. Size:258K  foshan
mje13003vf1.pdf

MJE13003VH1 MJE13003VH1

MJE13003VF1(3DD13003VF1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

 5.7. Size:190K  foshan
mje13003vi5.pdf

MJE13003VH1 MJE13003VH1

MJE13003VI53DD13003VI5 NPN /SILICON NPN TRANSISTOR Purpose:High voltage capability,high speed switching,wide SOA. 110V Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. /Absolute maximum ratings(Tc=25

 5.8. Size:218K  foshan
mje13003vi1.pdf

MJE13003VH1 MJE13003VH1

MJE13003VI1 3DD13003VI1 NPN /SILICON NPN TRANSISTOR 110V Purpose: Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. Features: High voltage capability,high speed switching,wide SOA. /Absolute maximum ratings(

 5.9. Size:389K  foshan
mje13003vn7.pdf

MJE13003VH1 MJE13003VH1

MJE13003VN7(3DD13003VN7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

 5.10. Size:244K  foshan
mje13003vg5.pdf

MJE13003VH1 MJE13003VH1

MJE13003VG5(3DD13003VG5) NPN /SILICON NPN TRANSISTOR:Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 400 VVCE

 5.11. Size:232K  foshan
mje13003vk5.pdf

MJE13003VH1 MJE13003VH1

MJE13003VK5(3DD13003VK5) NPN /SILICON NPN TRANSISTOR RoHS Purpose: High voltage capability, high speed switching, wide soa, RoHS compliant. 110V Features: Suitable for 110V circuit mode, fluorescent lamp, electronic ballast.

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