Справочник транзисторов. MJE13005DRB

 

Биполярный транзистор MJE13005DRB Даташит. Аналоги


   Наименование производителя: MJE13005DRB
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 75 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 4 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 7 MHz
   Статический коэффициент передачи тока (hfe): 10
   Корпус транзистора: TO263
 

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MJE13005DRB Datasheet (PDF)

 ..1. Size:235K  foshan
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MJE13005DRB

MJE13005DRB NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C P (Ta=25)

 5.1. Size:118K  utc
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MJE13005DRB

UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER 11TRANSISTOR TO-220TO-220F DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN 1power transistor. It is characterized by high breakdown voltage,1high current capability, high switching speed and high reliability. TO-251 TO-126The UTC

 5.2. Size:115K  utc
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MJE13005DRB

UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,high current capability, high switching speed and high reliability. The UTC MJE13005D-K is intended to be used in

 5.3. Size:51K  kec
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MJE13005DRB

SEMICONDUCTOR MJE13005DTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE HIGH SPEED POWER SWITCHAPPLICATION.ABuilt-in Free wheeling Diode makes efficient anti saturation operation.OCSuitable for half bridge light ballast Applications.FDIM MILLIMETERSLow base drive requirement.E _G A 9.9 + 0.2MAXIMUM RATING (Ta=25 )B 15.95 MAXBC 1.3+0.1/-0.05Q_CHAR

Другие транзисторы... MJE13004P3 , MJE13005A , MJE13005DC , MJE13005DP5 , MJE13005DQ3 , MJE13005DQ4 , MJE13005DQ5 , MJE13005DQ7 , 2N2222 , MJE13005DT3 , MJE13005DT7 , MJE13005G , MJE13005LP7 , MJE13005P7 , MJE13005P8 , MJE13005Q7 , MJE13005T7 .

History: KSH32 | 2SC1485

 

 
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