MJE13005DT7 datasheet, аналоги, основные параметры
Наименование производителя: MJE13005DT7 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 7 MHz
Статический коэффициент передачи тока (hFE): 8
Корпус транзистора: TO220
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Аналоги (замена) для MJE13005DT7
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MJE13005DT7 даташит
..1. Size:204K foshan
mje13005dt7.pdf 
MJE13005DT7(3DD13005DT7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C I 2.0 A
4.1. Size:193K foshan
mje13005dt3.pdf 
MJE13005DT3 (3DD13005DT3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9 V EBO I 4 A C I 2 A B
5.1. Size:118K utc
mje13005d.pdf 
UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER 1 1 TRANSISTOR TO-220 TO-220F DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN 1 power transistor. It is characterized by high breakdown voltage, 1 high current capability, high switching speed and high reliability. TO-251 TO-126 The UTC
5.2. Size:115K utc
mje13005d-k.pdf 
UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13005D-K is intended to be used in
5.3. Size:51K kec
mje13005d.pdf 
SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A Built-in Free wheeling Diode makes efficient anti saturation operation. O C Suitable for half bridge light ballast Applications. F DIM MILLIMETERS Low base drive requirement. E _ G A 9.9 + 0.2 MAXIMUM RATING (Ta=25 ) B 15.95 MAX B C 1.3+0.1/-0.05 Q _ CHAR
5.4. Size:375K kec
mje13005df.pdf 
SEMICONDUCTOR MJE13005DF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A C Built-in Free wheeling Diode makes efficient anti saturation operation. DIM MILLIMETERS S Suitable for half bridge light ballast Applications. _ A 10.0 + 0.3 _ + B 15.0 0.3 E Low base drive requirement. C _ 2.70 0.3 + D 0.76+0.09/-0.05 MAXIMUM R
5.5. Size:857K kec
mje13005dc.pdf 
SEMICONDUCTOR MJE13005DC TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. Built-in Free wheeling Diode makes efficient anti saturation operation. Suitable for half bridge light ballast Applications. Low base drive requirement. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VCEO Collec
5.7. Size:235K foshan
mje13005drb.pdf 
MJE13005DRB NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C P (Ta=25 )
5.8. Size:244K foshan
mje13005dq3.pdf 
MJE13005DQ3(3DD13005DQ3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 450 V CEO V 9.0 V EBO I 4 A C P
5.9. Size:248K foshan
mje13005dq7.pdf 
MJE13005DQ7(3DD13005DQ7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P
5.10. Size:239K foshan
mje13005dq5.pdf 
MJE13005DQ5(3DD13005DQ5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 800 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P
5.11. Size:292K foshan
mje13005dp5.pdf 
MJE13005DP5(3DD13005DP5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 2.5 A C
5.12. Size:251K foshan
mje13005dq4.pdf 
MJE13005DQ4(3DD13005DQ4) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9 V EBO I 4 A C P (T
5.13. Size:220K inchange semiconductor
mje13005d.pdf 
Isc Silicon NPN Power Transistor MJE13005D DESCRIPTION High Voltage Capability High Speed Switching Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Fluorescent lamp Electronic ballast Electronic transformer Switch mode power supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
Другие транзисторы: MJE13005DC, MJE13005DP5, MJE13005DQ3, MJE13005DQ4, MJE13005DQ5, MJE13005DQ7, MJE13005DRB, MJE13005DT3, 2N3055, MJE13005G, MJE13005LP7, MJE13005P7, MJE13005P8, MJE13005Q7, MJE13005T7, MJE13005T8, MJE13005VT7
