MJE13009G datasheet, аналоги, основные параметры

Наименование производителя: MJE13009G  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 80 W

Макcимально допустимое напряжение коллектор-база (Ucb): 700 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V

Макcимальный постоянный ток коллектора (Ic): 12 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 4 MHz

Ёмкость коллекторного перехода (Cc): 180 pf

Статический коэффициент передачи тока (hFE): 8

Корпус транзистора: TO220 TO220F TO3P

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MJE13009G даташит

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MJE13009G

UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid

 6.1. Size:451K  motorola
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MJE13009G

Order this document MOTOROLA by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009* *Motorola Preferred Device Designer's Data Sheet 12 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS The MJE13009 is designed for high voltage, high speed power switching inductive 100 WATTS circuits where fall time is critical. They are particularl

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MJE13009G

MJE13009 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEO Collector-Em

 6.3. Size:189K  onsemi
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MJE13009G

MJE13009G SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009G is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are http //onsemi.com particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, 12 AMPERE Solenoid/Relay drivers and Deflection circuits. NPN S

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