MJE182G - Даташиты. Аналоги. Основные параметры

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - MJE170, MJE180 = 60

MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS High DC Current Gain COMPLEMENTARY SILICON High Current-Gain - Bandwidth Product 40 - 60 -

Order this document MOTOROLA by MJE18206/D SEMICONDUCTOR TECHNICAL DATA MJE18206 Designer's Data Sheet MJF18206 SWITCHMODE NPN Bipolar Power Transistor for Electronic POWER TRANSISTORS Light Ballast and Switching 8 AMPERES 1200 VOLTS Power Supply Applications 40 and 100 WATTS The MJE/MJF18206 have an application specific state of the art die dedicated to the electron

Order this document MOTOROLA by MJE18204/D SEMICONDUCTOR TECHNICAL DATA MJE18204 Designer's Data Sheet MJF18204 SWITCHMODE NPN Bipolar Power Transistor for Electronic POWER TRANSISTORS Light Ballast and Switching 5 AMPERES 1200 VOLTS Power Supply Applications 35 and 75 WATTS The MJE/MJF18204 have an application specific state of the art die dedicated to the electroni

MJE172 MJE182 COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type) are silicon epitaxial planar, complementary transistors in Jedec SOT-32 plastic package, they are designed for low power audio amplifier and low current, high speed switching applications. 1 2 3 SOT-3

MJE172 MJE182 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type) are silicon Epitaxial Planar, complementary transistors in Jedec SOT-32 plastic package. They are designed for low power audio amplifier 1 2 and low current, high speed switching 3 applicatio

MJE180/181/182 Low Power Audio Amplifier Low Current High Speed Switching Applications TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage MJE180 60 V MJE181 80 V MJE182 100 V VCEO Collector-Emitter Voltage MJE180 40 V MJE181 60 V

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - M

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc Silicon NPN Power Transistor MJE182 DESCRIPTION Collector Emitter Sustaining Voltage V = 80 V CEO(SUS) DC Current Gain h = 30(Min) @ I = 0.5 A FE C = 12(Min) @ I = 1.5 A C Complement to the PNP MJE172 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low power audio amplifier Low current high speed switchin