MJE270G - Даташиты. Аналоги. Основные параметры

MJE270 (NPN), MJE271 (PNP) Complementary Silicon Power Transistors Features http //onsemi.com High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARY VCEO(sus) = 100 Vdc (Min) POWER DARLINGTON High DC Current Gain TRANSISTORS hFE @ 120 mA, 10 V = 1500 (Min) 100 VOLTS, 15 WATTS Pb-Free Packages are Availab

MJE270G (NPN), MJE271G (PNP) Complementary Silicon Power Transistors Features http //onsemi.com High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARY VCEO(sus) = 100 Vdc (Min) POWER DARLINGTON High DC Current Gain TRANSISTORS hFE @ 120 mA, 10 V = 1500 (Min) 100 VOLTS, 15 WATTS These Devices are Pb-Free

Order this document MOTOROLA by MJE270/D SEMICONDUCTOR TECHNICAL DATA NPN MJE270 Complementary Silicon Power PNP MJE271 Transistors . . . designed specifically for use with the MC3419 Solid State Subscriber Loop Interface Circuit (SLIC). High Safe Operating Area 2.0 AMPERE IS/B @ 40 V, 1.0 s = 0.375 A TO 126 COMPLEMENTARY Collector Emitter Sustaining Voltage POWE

MJE270 (NPN), MJE271 (PNP) Complementary Silicon Power Transistors Features http //onsemi.com High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARY VCEO(sus) = 100 Vdc (Min) POWER DARLINGTON High DC Current Gain TRANSISTORS hFE @ 120 mA, 10 V = 1500 (Min) 100 VOLTS, 15 WATTS Pb-Free Packages are Availab

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package MJE270, MJE271 MJE270 NPN PLASTIC POWER TRANSISTOR MJE271 PNP PLASTIC POWER TRANSISTOR Medium Power Darlingtons for Linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS Collect