Биполярный транзистор MJE340G
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJE340G
Маркировка: JE340
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 20
W
Макcимально допустимое напряжение коллектор-база (Ucb): 300
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3
V
Макcимальный постоянный ток коллектора (Ic): 0.5
A
Предельная температура PN-перехода (Tj): 150
°C
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора:
TO126
Аналоги (замена) для MJE340G
MJE340G
Datasheet (PDF)
..1. Size:67K onsemi
mje340g.pdf MJE340Plastic Medium-PowerNPN Silicon TransistorThis device is useful for high-voltage general purpose applications.Featureshttp://onsemi.com Suitable for Transformerless, Line-Operated Equipment Thermopad Construction Provides High Power Dissipation Rating0.5 AMPEREfor High Reliability Pb-Free Package is Available*POWER TRANSISTORNPN SILICON300 VOLTS, 20 WATT
8.1. Size:117K motorola
mje340re.pdf Order this documentMOTOROLAby MJE340/DSEMICONDUCTOR TECHNICAL DATAMJE340Plastic Medium Power NPN0.5 AMPERESilicon TransistorPOWER TRANSISTORNPN SILICON. . . useful for highvoltage general purpose applications.300 VOLTS Suitable for Transformerless, LineOperated Equipment20 WATTS Thermopad Construction Provides High Power Dissipation Rating for HighRelia
8.2. Size:594K st
mje340 mje350.pdf MJE340MJE350Complementary silicon power transistorsFeatures STMicroelectronics preferred salestypes Complementary NPN - PNP devicesApplications Linear and switching industrial equipment321DescriptionSOT-32The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32.The complemen
8.3. Size:66K st
mje340-mje350.pdf MJE340MJE350COMPLEMETARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICESAPPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTIONThe MJE340 is a silicon epitaxial planar NPN12transistor intended for use in medium power3linear and switching applications.It is mounted inSOT-32.The complementary PNP type is MJE350. S
8.4. Size:37K fairchild semi
mje340.pdf MJE340High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE350TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 VVEBO
8.5. Size:67K onsemi
mje340-d.pdf MJE340Plastic Medium-PowerNPN Silicon TransistorThis device is useful for high-voltage general purpose applications.Featureshttp://onsemi.com Suitable for Transformerless, Line-Operated Equipment Thermopad Construction Provides High Power Dissipation Rating0.5 AMPEREfor High Reliability Pb-Free Package is Available*POWER TRANSISTORNPN SILICON300 VOLTS, 20 WATT
8.6. Size:238K cdil
mje340.pdf Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTOR MJE340TO126 Plastic PackageECBFor use in High Voltage General Purpose ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage VCEO 300 VCollector Base Voltage VCBO 300 VVEBOEmitter Base Voltage 3.0 VICC
8.7. Size:208K inchange semiconductor
mje340t.pdf isc Silicon NPN Power Transistor MJE340TDESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 300 V(Min)CEO(SUS)DC Current Gain-: h = 100(Min) @ I = 50mAFE CLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 50mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and general p
8.8. Size:212K inchange semiconductor
mje340.pdf isc Silicon NPN Power Transistor MJE340DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 300 V(Min)CEO(SUS)DC Current Gain-: h = 100(Min) @ I = 50mAFE CLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 50mACE(sat) CComplement to the PNP MJE350Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned
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