MJH11021G - Даташиты. Аналоги. Основные параметры

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (

Order this document MOTOROLA by MJH11017/D SEMICONDUCTOR TECHNICAL DATA MJH10012 (See MJ10012) Complementary Darlington PNP Silicon Power Transistors * MJH11017 . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* High DC Current Gain @ 10 Adc hFE = 400 Min (All Types) Collector Emitter Sustaining Vo

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (

isc Silicon NPN Darlington Power Transistor MJH11022 DESCRIPTION Collector-Emitter Sustaining Voltage V = 250V (Min.) CEO(SUS) High DC Current Gain h = 400(Min.)@I = 10A FE C Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 5.0A CE (sat) C Complement to Type MJH11021 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS