Биполярный транзистор 3CG12 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 3CG12
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hfe): 25
Корпус транзистора: TO18
3CG12 Datasheet (PDF)
3cg12.pdf
3CG12 PNP A B C D E F G H I PCM TA=25 500 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 50 80 20 40 70 15 40 60 V V(BR)CEO ICE=0.1mA 15 40 70 15 30 60 12 30 50 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V
3cg1201.pdf
2SA1201(3CG1201) PNP /SILICON PNP TRANSISTOR : Purpose: power amplifier applications. ,, 2SC2881(3DG2881) Features: High f , high V , small flat package, complementary pair with 2SC2881(3DG2881). T CEO/Absolute maximum ratings(Ta=25)
3cg1283.pdf
2SA1283(3CG1283) PNP /SILICON PNP TRANSISTOR Purpose: General purpose amplifier. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V CBO V -60 V CEO V -6.0 V EBO I -1.0 A C P 0.9 W CT 150 j T -55150 stg /Electrical charact
3cg1213.pdf
2SA1213(3CG1213) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier and switching applications. : , 2SC2873(3DG2873) Features: Low collector saturation voltage, High speed switching time, small flat package, Complementary to 2SC2873(3DG2873).
3cg1260.pdf
2SB1260(3CG1260) PNP /SILICON PNP TRANSISTOR Purpose: Power amplifier applications. : 2SD1898(3DG1898) Features: High breakdown voltage, good h linearity, low V , complements FE CE(sat)the 2SD1898(3DG1898). /Absolute maximum ratings(Ta=25
3cg1218a.pdf
2SB1218A(3CG1218A) PNP /SILICON PNP TRANSISTOR Purpose: General amplification. :, 2SD1819A(3DG1819A) Features: High h complements the 2SD1819A(3DG1819A). FE, /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -45 V CBO V -45 V CEO V -7.0 V E
3cg1203.pdf
2SA1203(3CG1203) PNP /SILICON PNP TRANSISTOR : Purpose: Audio frequency amplifier applications. 3W 2SC28833DG2883 Features: Suitable for output stage of 3 watts amplifier, small flat package, complementary to 2SC2883(3DG2883). /Absolute maximum ratings(Ta=2
3cg1295.pdf
2SB1295(3CG1295) PNP /SILICON PNP TRANSISTOR : Purpose: AF power amplifiermedium-speed switching, small-sized motor drivers. : Features: Large current capacity, low collector to emitter saturation voltage, very s
3cg120.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG120,3CG130 PNP Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power
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