3DD137 - описание и поиск аналогов

3DD137(BD137) NPN PCM Tc 70 8 W ICM 2 A Tjm 150 Tstg -55 150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 0.1 A IEBO VEB=5V 0.01 A Ic=0.5A VCEsat 0.5 V

3DD13005 4A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-220J Power switching applications ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage V 700 V CBO Collector to Emitter Voltage VCEO 400 V

3DD13003B 1.5A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications A D Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 Collector E 0.36 0.56 2 E C F 0.36 0.51 F G 1.27 TYP. H 1.10 - J 2

3DD13001 0.2A , 600V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications A D B CLASSIFICATION OF hFE(1) Product-Rank 3DD13001-A 3DD13001-B E C F Range 17 23 20 26 G H 1Base 1 1 1 3 2Collector 2 2 2 Emitter 3Emitter 3 3 3

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN) FEATURE power switching applications TO-92 1. BASE 2. COLLECTOR 3. EMITTER Equivalent Circuit 13001 13001=Device code S 6B S 6B=Code 1 ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 3DD13001B TO-92 Bulk 1000pcs/Bag B-TA

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13003B TRANSISTOR( NPN ) 1. EMITTER 2. COLLECTOR FEATURES 3. BASE power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Vol

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistor 3DD13007N36F TRANSISTOR (NPN) TO-220F FEATURES Power switching applications 1. BASE 1 2 3 2. COLLECTOR 3. EMITTER 13007N=Device code Equivalent Circuit Solid dot=Green moldinn compound device, if none,the normal device 13007N 36F=Code 36F MAXIMUM RATINGS (Ta=25 unl

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR (NPN) TO-251-3L TO-252-2L FEATURE 1 2 3 power switching applications 1. BASE MAXIMUM RATINGS(Ta=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit VCBO Collector -Base Voltage 600 V 3. EMITTER 1 VCEO Collector-Emi

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR ( NPN ) TO-252-2L FEATURES 1. BASE Power Switching Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base V

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistor TO-220-3L 3DD13005ND66 TRANSISTOR (NPN) BASE 1 . FEATURES 2. COLLECTOR Power switching applic

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13001 TRANSISTOR (NPN) 1. BASE 2. COLLECTOR FEATURES Power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Volta

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistor 3DD13003N3 TRANSISTOR (NPN) TO-126 FEATURES 1 . BASE Power switching applications Good high temperature 2. COLLECTOR Low saturation voltage 3. EMITTER High speed switching Equivalent Circuit Logo 13003N3=Device code 13003N3 ORDERING INFORMATION Part Number Package Packi

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR NPN TO-92 FEATURE Power Switching Applications 1.EMITTER 2. COLLECTOR 3. BASE Equivalent Circuit 13002B=Device code 13002B Solid dot=Green molding compound device, XXX if none,the normal device XXX=Code 1 ORDERING INFORMATION Par

3DD13003(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuou

3DD13003(NPN) TO-126 Transistor TO-126 1.BASE 2.COLLECTOR 3.EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.500 7.400 2.900 1.100 7.800 Symbol Parameter Value Units 1.500 VCBO Collector-Base Voltage 700 V 3.900 3.000 4.100 VCEO Collector-Emitter Voltage 400 V 3.200 10.600 0.000 VEBO Emitter-Base V

3DD13005(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters) IC Collector Current -Continuo

3DD13007(NPN) TO-220 Transistor TO-220 1.BASE 2.COLLECTOR 3.EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 8

3DD13003B(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 2. COLLECTOR 5.21 3. BASE 4.32 2.92 5.33 MIN Features power switching applications 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.18 2.03 4.19 Symbol Parameter Value Units 2.67 1.14 VCBO Collector-Base Voltage 700 V 1.40 2.03 2.67 VCEO Collector-Emitter Voltage 400 V

3DD13002(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features power switching applications MAXIMUM RATINGS* TA=25 unless otherwise noted TO-252-2L Symbol Parameter Value Units VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A PC Collector

3DD13001(NPN) TO-92 Bipolar Transistors TO-92 1. BASE 4.45 5.21 2. COLLECTOR 3. EMITTER 4.32 2.92 5.33 MIN Features power switching applications 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.18 2.03 4.19 Symbol Parameter Value Units 2.67 1.14 VCBO Collector -Base Voltage 600 V 1.40 2.03 VCEO Collector-Emitter Voltage 400 V 2.67 VEB

3DD13009(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters) IC Collector Current -Contin

3DD13002B(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 4.32 2.92 5.33 MIN Features power switching applications 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.18 Symbol Parameter Value Units 2.03 4.19 2.67 VCBO Collector-Base Voltage 600 V 1.14 1.40 2.03 VCEO Collector-Emitter Voltage 400 V 2.67

WEITRON 3DD13003B NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES power switching applications TO-92 MAXIMUM RATINGS (T unless otherwise noted) A=25 C Parameter Symbol Value Units Collector-Base Voltage V VCBO 700 Collector-Emitter Voltage V VCEO 400 Emitter-Base Voltage 9 V VEBO A Collector Current -Continuous IC 1.5 Col

3DD13002B Switch Mode NPN Transistors TO-92 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 400 Vdc Collector-Base Voltage VCBO 600 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current IC 1.0 Adc PD 1.0 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Tempera

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007K MAIN CHARACTERISTICS Package I 8A C V 400V CEO P (TO-220C) 80W C APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power supply

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13003A MAIN CHARACTERISTICS Package I 1.5A C V 450V CEO P (TO-92) 1W C P (DPAK/IPAK) 10W C P (TO-126) 20W C P (TO-220) 40W C TO-92-FJ TO-126 APPLICATIONS TO-220 IPAK Battery changer Electronic ballast

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13005D MAIN CHARACTERISTICS Package I 4A C V 400V CEO P (TO-126/IPAK/IPAK-S3) 40W C P (TO-220/TO-220-S1) 75W C APPLICATIONS Energy-saving light Electronic ballasts High frequency swit

NPN MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13003V1D APPLICATIONS Package Energy-saving ligh Electronic ballasts Electronic transformer Commonly power amplifier circuit FEATURES M

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007MD MAIN CHARACTERISTICS Package I 8A C V 400V CEO P (TO-220HF/220MF-K1) 45W C P (TO-220C/262/263) 80W C TO-220C TO-220C-S1 APPLICATIONS Energy-saving light Electronic ballasts High frequency swit

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13005ED MAIN CHARACTERISTICS Package I 4A C V 450V CEO P (IPAK/TO-126/126F/220HF) 40W C P (DPAK) 50W C P (TO-220/220C/262/263) 75W C TO-220C-S1 TO-220C TO-220 APPLICATIONS Energy-saving light Electronic ba

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13009E MAIN CHARACTERISTICS Package I 12A C V 400V CEO P (TO-220C) 100W C P (TO-3PB) 120W C TO-220C-S1 TO-220C APPLICATIONS Energy-saving ligh Electronic ballasts High fre

MJE13005P8(BR3DD13005P8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High fr

MJE13007X9(BR3DD13007X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting, switching power supply applications.

MJE13007V9(BR3DD13007V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit

MJE13007HV7(BR3DD13007HV7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

MJE13003VK1(BR3DD13003VK1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications 110V Suitable for 110V circuit mode, fluore

MJE13002DG1(BR3DD13002DG1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High freque

MJE13002E1(BR3DD13002E1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequenc

MJE13009X8(BR3DD13009X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

MJE13007X7(BR3DD13007X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin

MJE13005P7(BR3DD13005P7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin

MJE13009X7(BR3DD13009X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications .

MJE13007X8(BR3DD13007X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

MJE13009X9(BR3DD13009X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit

MJE13005T8(BR3DD13005T8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

MJE13005LP7(BR3DD13005LP7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

MJE13003VK7(BR3DD13003VK7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features RoHS High voltage capability, high speed switching, wide soa, RoHS compliant. / Applications 110V

NPN R 3DD13005 C9D 3DD13005 C9D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13005 N8D 3DD13005 N8D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13001 A1 3DD13001 A1 NPN VCEO 400 V IC 0.25 A Ptot Ta=25 0.8 W

NPN R 3DD13007 Z8 3DD13007 Z8 NPN VCEO 200 V IC 8 A Ptot TC=25 75 W

NPN R 3DD13003 M8D 3DD13003 M8D NPN VCEO 400 V IC 2 A Ptot W TC=25 60

NPN R 3DD13002 B1-7 3DD13002 B1-7 VCEO 450 V NPN IC 0.5 A Ptot Ta=25 0.7 W

NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

NPN R 3DD13002 B1-7 3DD13002 B1-7 VCEO 450 V NPN IC 0.5 A Ptot Ta=25 0.7 W

NPN R 3DD13003 F3D 3DD13003 F3D VCEO 400 V NPN IC 1.5 A Ptot Tc=25 30 W

NPN R 3DD13012 AN 3DD13012 AN NPN VCEO 400 V IC 15 A Ptot TC=25 120 W

NPN R 3DD13007 Y8 3DD13007 Y8 NPN VCEO 340 V IC 7 A Ptot W TC=25 80

NPN R 3DD13007 B8 3DD13007 B8 NPN VCEO 400 V IC 8 A Ptot W TC=25 80

NPN R 3DD13007 B8 3DD13007 B8 NPN VCEO 400 V IC 8 A Ptot W TC=25 80

NPN R 3DD13003 K8 3DD13003 K8 NPN VCEO 400 V IC 1.8 A Ptot TC=25 60 W

NPN R 3DD13007 Z7 3DD13007 Z7 NPN VCEO 200 V IC 8 A Ptot TC=25 50 W

NPN R 3DD13003 U1D 3DD13003 U1D VCEO 200 V NPN IC 1.8 A Ptot Ta=25 0.8 W

NPN R 3DD13003 H6D 3DD13003 H6D VCEO 400 V NPN IC 1.8 A Ptot Tc=25 50 W

NPN R 3DD13005 C7D 3DD13005 C7D NPN VCEO 400 V IC 4 A Ptot TC=25 50 W

NPN R 3DD13003 U3D 3DD13003 U3D VCEO 200 V NPN IC 1.8 A Ptot TC=25 30 W

NPN R 3DD13003 M6D 3DD13003 M6D NPN VCEO 400 V IC 2 A Ptot TC=25 50 W

NPN R 3DD13005 C9D 3DD13005 C9D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13012 AN 3DD13012 AN NPN VCEO 400 V IC 15 A Ptot TC=25 120 W

NPN R 3DD13005 C8D 3DD13005 C8D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13005 N7D 3DD13005 N7D NPN VCEO 400 V IC 4 A Ptot W TC=25 60

R NPN 3DD13003H3D 1 3DD13003H3D NPN VCEO 400 V IC 1.8 A Ptot TC=25

NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

NPN R 3DD13003 U6D 3DD13003 U6D VCEO 200 V NPN IC 1.8 A Ptot TC=25 35 W

NPN R 3DD13005 C8D 3DD13005 C8D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

R NPN 3DD13003V6D 1 3DD13003V6D NPN

NPN R 3DD13005 C7D 3DD13005 C7D NPN VCEO 400 V IC 4 A Ptot TC=25 50 W

NPN R 3DD13007 H8D 3DD13007 H8D NPN VCEO 400 V IC 9 A Ptot W TC=25 90

NPN R 3DD13001 P 3DD13001 P NPN VCEO 400 V IC 0.17 A Ptot Ta=25 0.6 W

NPN R 3DD13007 X1 3DD13007 X1 NPN VCEO 400 V IC 8 A Ptot W TC=25 80

NPN R 3DD13005 G3D 3DD13005 G3D NPN VCEO 400 V IC 4 A Ptot W TC=25 40

NPN R 3DD13007 X1 3DD13007 X1 NPN VCEO 400 V IC 8 A Ptot W TC=25 80

NPN R 3DD13001 A1 3DD13001 A1 NPN VCEO 400 V IC 0.25 A Ptot Ta=25 0.8 W

NPN R 3DD13005 GRD 3DD13005 GRD NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13005 G3D 3DD13005 G3D NPN VCEO 400 V IC 4 A Ptot W TC=25 40

NPN R 3DD13005 G8D 3DD13005 G8D NPN VCEO 400 V IC 4 A Ptot W TC=25 75

NPN R 3DD13003 K6 3DD13003 K6 NPN VCEO 400 V IC 1.8 A Ptot TC=25 50 W

NPN R 3DD13003 M6D 3DD13003 M6D NPN VCEO 400 V IC 2 A Ptot W TC=25 50

NPN R 3DD13003 F6D 3DD13003 F6D VCEO 400 V NPN IC 1.5 A Ptot Tc=25 50 W

NPN R 3DD13002 RUD 3DD13003 RUD VCEO 200 V NPN IC 1 A Ptot Ta=25 0.5 W

NPN R 3DD13009 X8D 3DD13009 X8D VCEO 200 V NPN IC 12 A Ptot TC=25 100 W

NPN R 3DD13003 H8D 3DD13003 H8D VCEO 400 V NPN IC 1.8 A Ptot TC=25 60 W

NPN R 3DD13005 C3D 3DD13005 C3D NPN VCEO 400 V IC 4 A Ptot TC=25 40 W

NPN R 3DD13005 N7D 3DD13005 N7D NPN VCEO 400 V IC 4 A Ptot TC=25 60 W

NPN R 3DD13003 U1D 3DD13003 U1D VCEO 200 V NPN IC 1.8 A Ptot Ta=25 0.8 W

NPN R 3DD13005 C3D 3DD13005 C3D NPN VCEO 400 V IC 4 A Ptot TC=25 40 W

NPN R 3DD13005 N8D 3DD13005 N8D NPN VCEO 400 V IC 4 A Ptot W TC=25 75

NPN R 3DD13007 H8D 3DD13007 H8D NPN VCEO 400 V IC 9 A Ptot W TC=25 90

NPN R 3DD13002 B1D 3DD13002 B1D VCEO 400 V NPN IC 0.5 A Ptot Ta=25 0.8 W

NPN R 3DD13002 RUD 3DD13003 RUD VCEO 200 V NPN IC 1 A Ptot Ta=25 0.5 W

NPN R 3DD13003 E6D 3DD13003 E6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W

NPN R 3DD13005 GRD 3DD13005 GRD NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13003 M8D 3DD13003 M8D NPN VCEO 400 V IC 2 A Ptot W TC=25 60

NPN R 3DD13007 B8D 3DD13007 B8D NPN VCEO 400 V IC 7 A Ptot TC=25 80 W

NPN R 3DD13003 U3D 3DD13003 U3D VCEO 200 V NPN IC 1.8 A Ptot TC=25 30 W

NPN R 3DD13007 Y8 3DD13007 Y8 NPN VCEO 340 V IC 7 A Ptot W TC=25 80

NPN R 3DD13005 G8D 3DD13005 G8D NPN VCEO 400 V IC 4 A Ptot W TC=25 75

SMD r DIP Ty Trans stor SMD Type Transistor SMD Type TransistoC SMDTyppee Tra n s iis tIors Type Product specification 3DD13007 Features TO-263 Unit mm High Speed Switching +0.2 4.57-0.2 +0.1 1.27-0.1 Suitable for Switching Regulator and Motor Control +0.1 0.1max 1.27-0.1 1 3 2 +0.1 0.81-0.1 2.54 1. BASE +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 2. COLLE

SMD Type Transistors NPN Transistors 3DD13002 1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=400V Power Switching Applications 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 600 Collector - Emitter Voltage VCEO 400 V Emitt

SMD Type Transistors NPN Transistors 3DD13003 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=400V 0.42 0.1 0.46 0.1 Power Switching Applications 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 700 Collector - Emitter Voltage VCEO 400 V Emi

SMD Type Transistors NPN Transistors 3DD13001 Features 1.70 0.1 Collector-emitter Voltage V(BR)CEO=400V Collector Current IC=0.2A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current -

NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

NPN R 3DD13003 H6D 3DD13003 H6D VCEO 400 V NPN IC 1.8 A Ptot Tc=25 50 W

NPN R 3DD13005 C7D 3DD13005 C7D NPN VCEO 400 V IC 4 A Ptot TC=25 50 W

NPN R 3DD13007 X1 3DD13007 NPN VCEO 400 V IC 8 A Ptot TC=25

NPN R 3DD13002 B1 3DD13002 B1 NPN VCEO 400 V IC 0.5 A Ptot Ta=25 0.8 W

NPN R 3DD13003 E6D 3DD13003 E6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W

NPN R 3DD13005 GRD 3DD13005 GRD NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

3DD13009AN NPN Main Characteristics VCEO 400 V IC 12 A Ptot TC=25 120 W Applications Energy-saving light Electronic lamp ballasts Electronic transformer High frequency switching power supply TO-3P Commonly power am

isc Silicon NPN Power Transistor 3DD13009K DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

isc Silicon NPN Power Transistor 3DD13009N DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving ligh High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

isc Silicon NPN Power Transistor 3DD13009NL DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving ligh High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD13009 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.5 (Max) @ I = 8.0A CE(sat) C Switching Time t = 0.7 s(Max.)@ I = 8.0A f C 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desig