Биполярный транзистор 3DD157 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 3DD157
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 175 °C
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO3 TO220 TO257
3DD157 Datasheet (PDF)
3dd157.pdf
3DD157 NPN A B C D E F G PCM TC=75 30 W ICM 3 A Tjm 175 Tstg -55~150 VCE=10V Rth 3.3 /W IC=1A V(BR)CBO ICB=3mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=5
3dd1555.pdf
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R3DD1555 Package MAIN CHARACTERISTICS TO-3P(H)IS 1500 V BV CBO5 A I C5 V(max) V CE(sat)t 1 s(max) f APPLICATIONS Horizontal deflection output for color TV. 1 2 3 FEATURES
3dd153.pdf
3DD153 NPN A B C D E F G PCM TC=75 10 W ICM 1.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=1mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=0.5mA 5.0 V ICBO
3dd15.pdf
3DD15 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2.0 /W IC=1A V(BR)CBO ICB5mA 60 150 200 300 400 500 V V(BR)CEO ICE5mA 60 100 120 200 300 350 V V(BR)EBO IEB5mA 4.0 V ICBO VCB=50V
3dd159.pdf
3DD159 NPN A B C D E F G PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=5
3dd155.pdf
3DD155 NPN A B C D E F G PCM TC=75 20 W ICM 2 A Tjm 175 Tstg -55~150 VCE=10V Rth 5 /W IC=0.5A V(BR)CBO ICB=1mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=0.5mA 5.0 V ICBO VCB
3dd151.pdf
3DD151 NPN A B C D E F G PCM TC=75 5 W ICM 1 A Tjm 175 Tstg -55~150 VCE=10V Rth 20 /W IC=0.1A V(BR)CBO ICB=1mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB
3dd159f.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD159FDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)
3dd159c.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD159CDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)
3dd15d.pdf
isc Silicon NPN Power Transistor 3DD15DDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min.)(BR)CEODC Current Gain-: h = 30~250(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B&W TV horizontal output , r
3dd15.pdf
isc Silicon NPN Power Transistor 3DD15DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEODC Current Gain-: h = 30~250(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B&W TV horizontal output , reg
3dd159a.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD159ADESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE
3dd159d.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD159DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)
3dd159e.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD159EDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)
3dd155.pdf
isc Silicon NPN Power Transistor 3DD155DESCRIPTIONDC Current Gain: h = 15-120@I = 1AFE CCollector-Emitter Saturation Voltage: V )= 1.0V(Max)@ I = 1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B&W TV horizontal output , regulated powersupply and power amplifier applications.ABSOLUTE MAXIMUM RA
3dd159b.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD159BDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)
3dd15b.pdf
isc Silicon NPN Power Transistor 3DD15BDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEODC Current Gain-: h = 30~250(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B&W TV horizontal output , r
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
