3DD164 - Даташиты. Аналоги. Основные параметры

3DD164 NPN A B C D E F G PCM TC=75 100 W ICM 10 A Tjm 175 Tstg -55 150 VCE=10V Rth 1 /W IC=3A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=5

isc Silicon NPN Power Transistor 3DD164F DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

3DD167 NPN A B C D E F G PCM TC=75 150 W ICM 15 A Tjm 175 Tstg -55 150 VCE=10V Rth 0.66 /W IC=5A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=5mA 5.0 V ICBO VC

3DD162-S NPN PCM Tc=25 75 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2.0 /W Ic=1.5A 25 Tc 75 V(BR)CBO ICB=5mA 80 V V(BR)CEO ICE=5mA 80 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=80V, 50 A ICEO VCE=70V 1.0 mA IEBO VEB=5.0V 0.5 m

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD162(3DD163) NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ8

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD167E DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD167D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD167F DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD167C DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD167A DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD167B DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )