3DD2028LL - описание и поиск аналогов

3DD2028LL NPN A B C D PCM Tc=75 50 W ICM 3 A Tjm 175 Tstg -55 150 VCE=10V Rth 2 /W IC=1A V(BR)CBO ICB=5mA 1100 1400 1600 1800 V V(BR)CEO ICE=5mA 500 600 800 1000 V V(BR)EBO IEB=0.5mA 8.0 V ICBO VCB=1000V 0.3 mA VBEsat

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD202B DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD202A DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD209L MAIN CHARACTERISTICS Package I 12A C V 400V CEO P C 120W APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply

3DD203 NPN A B C D E F PCM TC=75 10 W ICM 1 A Tjm 175 Tstg -55 150 VCE=10V Rth 10 /W IC=0.3A V(BR)CBO ICB=1mA 80 150 200 250 350 450 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.1 mA

3DD2073 NPN PCM Tc=25 25 W ICM 1.5 A Tjm 175 Tstg -55 150 VCE=10V Rth 4 /W IC=0.8A V(BR)CBO ICB=1mA 150 V V(BR)CEO ICE=1mA 150 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=120V 10 mA IEBO VEB=5V 10 mA VBEsat 3.0 Ic=0.5A V IB=0.05

3DD204 NPN A B C D E F PCM TC=75 30 W ICM 3 A Tjm 175 Tstg -55 150 VCE=10V Rth 3.33 /W IC=0.6A V(BR)CBO ICE=1mA 100 150 200 250 300 350 V V(BR)CEO ICB=1mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.1 mA

isc Silicon NPN Power Transistor 3DD208 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min.) (BR)CEO DC Current Gain- h = 30 250(Min.)@I = 0.5A FE C Collector-Emitter Saturation Voltage- V )= 2.0V(Max)@ I = 1A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and powe

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD200D DESCRIPTION Excellent Safe Operating Area High DC Current Gain-h =15(Min)@I = 8A FE C Low Saturation Voltage- V )= 1.4V(Max)@ I = 8A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for high power audio ,disk head positioners and other linear

isc Silicon NPN Power Transistor 3DD201 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO DC Current Gain- h = 40 120(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal output applicati

isc Silicon NPN Power Transistor 3DD209L DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD207 DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For audio amplifier applications

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD200 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO DC Current Gain- h = 30 120(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 3A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV