Справочник транзисторов. 3DG183

 

Биполярный транзистор 3DG183 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 3DG183
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.7 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 50 MHz
   Статический коэффициент передачи тока (hfe): 25
   Корпус транзистора: TO18

 Аналоги (замена) для 3DG183

 

 

3DG183 Datasheet (PDF)

 ..1. Size:119K  china
3dg183.pdf

3DG183

3DG183 NPN A B C D E PCM TA=25 700 mW ICM 100 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 300 350 400 450 500 V V(BR)CEO ICE=0.1mA 300 350 400 450 500 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 2.0 A IE

 9.1. Size:121K  china
3dg182.pdf

3DG183

3DG182 NPN A B C D E PCM 700 mW ICM 300 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 100 140 180 220 V V(BR)CEO ICE=0.1mA 60 100 140 180 220 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 2.0 A IEBO VEB=2V

 9.2. Size:234K  foshan
3dg1815.pdf

3DG183
3DG183

2SC1815(3DG1815) NPN /SILICON NPN TRANSISTOR :, Purpose: Audio frequency general purpose ,driver stage amplifier applications. :,, h ,, 2SA1015(3CG1015) FEFeatures: High voltage and high current, excellent h linearity ,low noise ,complementary FEp

 9.3. Size:387K  foshan
3dg1815m.pdf

3DG183
3DG183

2SC1815M(3DG1815M) NPN /SILICON NPN TRANSISTOR :,/Purpose: Audio frequency general purpose, driver stage amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 50 V CEO V 5.0 V EBO I 150 mA C I 50 mA B P 300 mW C T

 9.4. Size:124K  foshan
3dg1809.pdf

3DG183
3DG183

2SC1809(3DG1809) NPN /SILICON NPN TRANSISTOR : Purpose: FM radio RF amplifier applications. :f TFeatures: High f , low output capacitance, low base time constant and high gain, T excellent noise characteristics. /A

 9.5. Size:307K  lzg
3dg1859.pdf

3DG183
3DG183

2SC1859(3DG1859) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power amplifier applications. 2SB1238(3CA1238) Features: High breakdown voltagehigh currentcomplementary pair with 2SB1238(3CA1238). /Absolute maximum ratings(Ta=25) Symbol R

 9.6. Size:32K  shaanxi
3dg181.pdf

3DG183

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG181, 3DG182 NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal am

 9.7. Size:26K  shaanxi
3dg180.pdf

3DG183

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG180NPN Silicon High Reverse Voltage High Frequency Middle Power TransistorFeatures: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplificat

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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