3DG1906 - описание и поиск аналогов

2SC1906(3DG1906) NPN /SILICON NPN TRANSISTOR , , Purpose VHF amplifier, mixer, local osciliator. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30 V CBO V 19 V CEO V 2.0 V EBO I 50 mA C I -50 mA E P 300 mW C T 150 j T -55 150

3DG19A NPN PCM TA=25 250 mW ICM 600 mA Tjm 150 Tstg -65 150 V(BR)CBO ICB=0.1mA 180 V V(BR)CEO ICE=0.1mA 160 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=120V 0.05 A IEBO VCE=4V 0.05 A IC=50mA VCEsat 0.2 V IB=5mA VCE=5V hFE 80 I

2SC1959(3DG1959) NPN /SILICON NPN TRANSISTOR , /Purpose Audio frequency power amplifier, driver stage amplifier and switching applications. h , 1W , 2SA562TM(3CG562TM) /Features Excellent h linearity FE FE 1 Watt output amplifier applications, complemen

2SC1959M(3DG1959M) NPN /SILICON NPN TRANSISTOR , /Purpose Audio frequency low power amplifier,driver stage amplifier and switching applications. h , 2SA562M(3CG562M) FE Features Excellent h Linearity, complementary pair with 2SA562M(3CG562M). FE

2SC1923(3DG1923) NPN /SILICON NPN TRANSISTOR ,FM , Purpose High frequency, FM,RF,MIX,IF amplifier applications. , Features Small reverse transfer capacitance, low noise figure. /Absolute maximum ratings(Ta=25 ) Symbol Ratin

2SC1921(3DG1921) NPN /SILICON NPN TRANSISTOR , , Purpose High frequency high voltage amplifier, video output. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 250 V CBO V 200 V CEO V 5.0 V EBO I 50 mA C P 600 mW C T 150 j T -55 150 st