Справочник транзисторов. 3DK104H

 

Биполярный транзистор 3DK104H - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 3DK104H

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.7 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.4 A

Предельная температура PN-перехода (Tj): 175 °C

Граничная частота коэффициента передачи тока (ft): 150 MHz

Статический коэффициент передачи тока (hfe): 25

Корпус транзистора: TO18

Аналоги (замена) для 3DK104H

 

 

3DK104H Datasheet (PDF)

1.1. 3dk104h.pdf Size:169K _china

3DK104H

3DK104H 型 NPN 硅小功率开关晶体管 参数符号 测试条件 规范值 单位 PCM TC=25℃ 700 mW 极 ICM 400 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥100 V V(BR)CEO ICE=0.1mA ≥60 V V(BR)EBO IEB=0.1mA ≥5 V ICBO VCB=10V ≤0.1 μA 直 ICEO VCE=10V ≤0.1 μA 流 参 IEBO VEB=4V ≤0.1 μA 数 VBEsat ≤0.9 IC=30mA V IB=3mA

4.1. 3dk104e.pdf Size:183K _inchange_semiconductor

3DK104H
3DK104H

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DK104E DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE

4.2. 3dk104c.pdf Size:183K _inchange_semiconductor

3DK104H
3DK104H

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DK104C DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE

 4.3. 3dk104d.pdf Size:204K _inchange_semiconductor

3DK104H
3DK104H

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DK104D DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE

4.4. 3dk104f.pdf Size:183K _inchange_semiconductor

3DK104H
3DK104H

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DK104F DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE

 4.5. 3dk104b.pdf Size:183K _inchange_semiconductor

3DK104H
3DK104H

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DK104B DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE

4.6. 3dk104.pdf Size:32K _china

3DK104H

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DK104, 3DK105 NPN Silicon High Frequency Moddle Power Switch Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation and high frequency switch, high frequency sma

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