Справочник транзисторов. PH1090-350L

 

Биполярный транзистор PH1090-350L - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: PH1090-350L
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 875 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
   Макcимальный постоянный ток коллектора (Ic): 17 A
   Предельная температура PN-перехода (Tj): 200 °C
   Граничная частота коэффициента передачи тока (ft): 1090 MHz
   Статический коэффициент передачи тока (hfe): 8
   Корпус транзистора: CERAMIC

 Аналоги (замена) для PH1090-350L

 

 

PH1090-350L Datasheet (PDF)

 ..1. Size:147K  macom
ph1090-350l.pdf

PH1090-350L
PH1090-350L

PH1090-350L Avionics Pulsed Power Transistor M/A-COM Products 350W, 1090 MHz, 250s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

 7.1. Size:193K  macom
ph1090-700b.pdf

PH1090-350L
PH1090-350L

PH1090-700B Avionics Pulsed Power Transistor M/A-COM Products 700W, 1030-1090 MHz, 32s Pulse, 2% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system I

 7.2. Size:142K  macom
ph1090-55s.pdf

PH1090-350L
PH1090-350L

PH1090-550S Avionics Pulsed Power Transistor M/A-COM Products 550W, 1090 MHz, 10s Pulse, 1% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.3. Size:147K  macom
ph1090-75l.pdf

PH1090-350L
PH1090-350L

PH1090-75L Avionics Pulsed Power Transistor M/A-COM Products 75W, 1030-1090 MHz, 250s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system I

 7.4. Size:145K  macom
ph1090-15l.pdf

PH1090-350L
PH1090-350L

PH1090-15L Avionics Pulsed Power Transistor Released, 30 May 07 15W, 1030-1090 MHz, 250s Pulse, 10% Duty Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and

 7.5. Size:138K  macom
ph1090-175l.pdf

PH1090-350L
PH1090-350L

PH1090-175L Avionics Pulsed Power Transistor Released, 30 May 07 175W, 1090 MHz, 250s Pulse, 10% Duty Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and ou

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