Справочник транзисторов. PH3134-25M

 

Биполярный транзистор PH3134-25M Даташит. Аналоги


   Наименование производителя: PH3134-25M
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 159 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 65 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 200 °C
   Граничная частота коэффициента передачи тока (ft): 3400 MHz
   Статический коэффициент передачи тока (hfe): 7.5
   Корпус транзистора: CERAMIC
 

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PH3134-25M Datasheet (PDF)

 ..1. Size:102K  macom
ph3134-25m.pdfpdf_icon

PH3134-25M

PH3134-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 3.1-3.4 GHz, 100s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 6.1. Size:102K  macom
ph3134-20l.pdfpdf_icon

PH3134-25M

PH3134-20L Radar Pulsed Power Transistor M/A-COM Products 20W, 3.1-3.4 GHz, 300s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.1. Size:94K  macom
ph3134-30s.pdfpdf_icon

PH3134-25M

PH3134-30S Radar Pulsed Power Transistor M/A-COM Products 30W, 3.1-3.4 GHz, 1s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.2. Size:95K  macom
ph3134-55l.pdfpdf_icon

PH3134-25M

PH3134-55L Radar Pulsed Power Transistor M/A-COM Products 55W, 3.1-3.4 GHz, 300s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

Другие транзисторы... PH2729-8.5M , PH2731-20M , PH2731-5M , PH2731-75L , PH2856-160 , PH2931-20M , PH3134-10M , PH3134-20L , BD140 , PH3134-30S , PH3134-55L , PH3134-65M , PH3135-20M , PH3135-25S , PH3135-5M , PH3135-65M , PH3135-90S .

History: 2SA1577W | BF159 | 2SC2180

 

 
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