Справочник транзисторов. PHPT610035NK

 

Биполярный транзистор PHPT610035NK - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: PHPT610035NK
   Маркировка: 10035NK
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 25 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 140 MHz
   Ёмкость коллекторного перехода (Cc): 11 pf
   Статический коэффициент передачи тока (hfe): 10
   Корпус транзистора: SOT1205

 Аналоги (замена) для PHPT610035NK

 

 

PHPT610035NK Datasheet (PDF)

 ..1. Size:241K  nxp
phpt610035nk.pdf

PHPT610035NK
PHPT610035NK

PHPT610035NKNPN/NPN high power double bipolar transistor14 October 2014 Product data sheet1. General descriptionNPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Matched version of PHPT610030NK.PNP/PNP complement: PHPT610035PK.NPN/PNP complement: PHPT610035NPK.2. Features and benefits Current gain matchi

 4.1. Size:238K  nxp
phpt610035pk.pdf

PHPT610035NK
PHPT610035NK

PHPT610035PKPNP/PNP matched high power double bipolar transistor24 October 2014 Product data sheet1. General descriptionPNP/PNP high power matched double bipolar transistor in a SOT1205 (LFPAK56D)Surface-Mounted Device (SMD) power plastic package. Matched version ofPHPT610030PK.NPN/NPN complement: PHPT610035NK.2. Features and benefits Current gain matching 10 % High th

 5.1. Size:287K  nxp
phpt61003py.pdf

PHPT610035NK
PHPT610035NK

PHPT61003PY100 V, 3A PNP high power bipolar transistor13 January 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT61003NY2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C R

 5.2. Size:291K  nxp
phpt61003ny.pdf

PHPT610035NK
PHPT610035NK

PHPT61003NY100 V, 3 A NPN high power bipolar transistor3 February 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT61003PY2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

 5.3. Size:295K  nxp
phpt610030npk.pdf

PHPT610035NK
PHPT610035NK

PHPT610030NPKNPN/PNP high power double bipolar transistor14 October 2014 Product data sheet1. General descriptionNPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package.NPN/NPN complement: PHPT610030NK.PNP/PNP complement: PHPT610030PK.2. Features and benefits High thermal power dissipation capability Suita

 5.4. Size:241K  nxp
phpt610030nk.pdf

PHPT610035NK
PHPT610035NK

PHPT610030NKNPN/NPN high power double bipolar transistor20 October 2014 Product data sheet1. General descriptionNPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package.PNP/PNP complement: PHPT610030PK.NPN/PNP complement: PHPT610030NPK.2. Features and benefits High thermal power dissipation capability Suita

 5.5. Size:239K  nxp
phpt610030pk.pdf

PHPT610035NK
PHPT610035NK

PHPT610030PKPNP/PNP high power double bipolar transistor22 October 2014 Product data sheet1. General descriptionPNP/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package.NPN/NPN complement: PHPT610030NK.NPN/PNP complement: PHPT610030NPK.2. Features and benefits High thermal power dissipation capability Suita

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