Биполярный транзистор 2N1714S
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N1714S
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 10
W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 0.75
A
Предельная температура PN-перехода (Tj): 175
°C
Ёмкость коллекторного перехода (Cc): 50
pf
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора:
TO5
Аналоги (замена) для 2N1714S
2N1714S
Datasheet (PDF)
..1. Size:317K no
2n1714s.pdf 
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MILPRF19500/263B shall be completed by 13 April 2015. 12 January 2015 SUPERSEDING MILS19500/263A(ER) 15 May 1963 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVEL JAN Inactive
9.2. Size:51K philips
2n1711 cnv 2.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N1711NPN medium power transistor1997 May 28Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistor 2N1711FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 emit
9.3. Size:46K st
2n1711.pdf 
2N1711EPITAXIAL PLANAR NPNDESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPNtransistor in Jedec TO-39 metal case. It isintented for use in high performance amplifier,oscillator and switching circuits.The 2N1711 is also used to advantage inamplifiers where low noise is an important factor.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Va
9.4. Size:47K st
2n1711 .pdf 
2N1711EPITAXIAL PLANAR NPNDESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPNtransistor in Jedec TO-39 metal case. It isintented for use in high performance amplifier,oscillator and switching circuits.The 2N1711 is also used to advantage inamplifiers where low noise is an important factor.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Va
9.5. Size:64K central
2n1613 2n1711 2n1893.pdf 
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
9.6. Size:318K no
2n1715s.pdf 
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MILPRF19500/263B shall be completed by 13 April 2015. 12 January 2015 SUPERSEDING MILS19500/263A(ER) 15 May 1963 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVEL JAN Inactive
9.7. Size:318K no
2n1717s.pdf 
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MILPRF19500/263B shall be completed by 13 April 2015. 12 January 2015 SUPERSEDING MILS19500/263A(ER) 15 May 1963 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVEL JAN Inactive
9.8. Size:318K no
2n1716s.pdf 
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MILPRF19500/263B shall be completed by 13 April 2015. 12 January 2015 SUPERSEDING MILS19500/263A(ER) 15 May 1963 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVEL JAN Inactive
9.9. Size:127K bocasemi
2n956 2n718a 2n1711.pdf 
http://www.bocasemi.comBoca Semiconductor Corp. BSC http://www.bocasemi.com
9.10. Size:74K cdil
2n1711.pdf 
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR 2N1711TO-39Metal Can PackageGeneral Purpose TransistorABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage, RBE
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