Справочник транзисторов. 2N1717S

 

Биполярный транзистор 2N1717S - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N1717S
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 10 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.75 A
   Предельная температура PN-перехода (Tj): 175 °C
   Ёмкость коллекторного перехода (Cc): 50 pf
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO39

 Аналоги (замена) для 2N1717S

 

 

2N1717S Datasheet (PDF)

 ..1. Size:318K  no
2n1717s.pdf

2N1717S
2N1717S

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MILPRF19500/263B shall be completed by 13 April 2015. 12 January 2015 SUPERSEDING MILS19500/263A(ER) 15 May 1963 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVEL JAN Inactive

 9.1. Size:623K  rca
2n1711.pdf

2N1717S

 9.2. Size:51K  philips
2n1711 cnv 2.pdf

2N1717S
2N1717S

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N1711NPN medium power transistor1997 May 28Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistor 2N1711FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 emit

 9.3. Size:46K  st
2n1711.pdf

2N1717S
2N1717S

2N1711EPITAXIAL PLANAR NPNDESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPNtransistor in Jedec TO-39 metal case. It isintented for use in high performance amplifier,oscillator and switching circuits.The 2N1711 is also used to advantage inamplifiers where low noise is an important factor.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Va

 9.4. Size:47K  st
2n1711 .pdf

2N1717S
2N1717S

2N1711EPITAXIAL PLANAR NPNDESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPNtransistor in Jedec TO-39 metal case. It isintented for use in high performance amplifier,oscillator and switching circuits.The 2N1711 is also used to advantage inamplifiers where low noise is an important factor.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Va

 9.5. Size:64K  central
2n1613 2n1711 2n1893.pdf

2N1717S

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.6. Size:318K  no
2n1715s.pdf

2N1717S
2N1717S

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MILPRF19500/263B shall be completed by 13 April 2015. 12 January 2015 SUPERSEDING MILS19500/263A(ER) 15 May 1963 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVEL JAN Inactive

 9.7. Size:317K  no
2n1714s.pdf

2N1717S
2N1717S

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MILPRF19500/263B shall be completed by 13 April 2015. 12 January 2015 SUPERSEDING MILS19500/263A(ER) 15 May 1963 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVEL JAN Inactive

 9.8. Size:318K  no
2n1716s.pdf

2N1717S
2N1717S

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MILPRF19500/263B shall be completed by 13 April 2015. 12 January 2015 SUPERSEDING MILS19500/263A(ER) 15 May 1963 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVEL JAN Inactive

 9.9. Size:127K  bocasemi
2n956 2n718a 2n1711.pdf

2N1717S
2N1717S

http://www.bocasemi.comBoca Semiconductor Corp. BSC http://www.bocasemi.com

 9.10. Size:74K  cdil
2n1711.pdf

2N1717S
2N1717S

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR 2N1711TO-39Metal Can PackageGeneral Purpose TransistorABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage, RBE

 9.11. Size:92K  microelectronics
2n1613 2n1711.pdf

2N1717S
2N1717S

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: H5401 | 2SA543

 

 
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