Биполярный транзистор 2N2891SMD05 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N2891SMD05
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.8 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 30 MHz
Ёмкость коллекторного перехода (Cc): 70 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO276AA
Аналоги (замена) для 2N2891SMD05
2N2891SMD05 Datasheet (PDF)
2n2891smd05.pdf
SILICON NPN TRANSISTOR 2N2891SMD05 V(BR)CEO = 80V (Min). Hermetic Ceramic Surface Mount Package Ideally Suited For Low Frequency Large Signal Applications (High Voltage). Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 100V VCEO Collector Emitter Voltage 80V VEBO Emitter
2n2891.pdf
2N2891Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
2n2894a.pdf
2N2894ADimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar PNP Device. VCEO = 12V 0.48 (0.019)0.41 (0.016)dia.IC = 0.2A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA
2n2894ac1a.pdf
HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 Hermetic Ceramic Surface Mount Package (SOT23 Compatible) Silicon Planar Epitaxial PNP Transistor High Speed low Saturation Switching Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -12V VCEO Collecto
2n2894.pdf
2N2894PNP SILICON MECHANICAL DATADimensions in mm (inches) TRANSISTOR 5.84 (0.230)5.31 (0.209)FEATURES4.95 (0.195)4.52 (0.178) SILICON PNP TRANSISTOR HIGH SPEED, LOW SATURATION SWITCHAPPLICATIONS:0.48 (0.019)GENERAL PURPOSE SWITCHING0.41 (0.016)dia.APPLICATIONS2.54 (0.100)Nom.3 12TO18Underside ViewPIN1 EMITER PIN 2 BASE PIN 3 COLLE
2n2896x.pdf
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2896X High Voltage Hermetic TO-18 Metal package. Ideally suited for General Purpose Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 140V VCEO Collector Emitter Voltage 90V VCER Collector Emitter Voltage 140
2n2895.pdf
2N2895Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar NPN Device. VCEO = 65V 0.48 (0.019)0.41 (0.016)dia.IC = 1A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTX
2n2894ac1b.pdf
HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 Hermetic Ceramic Surface Mount Package (SOT23 Compatible) Silicon Planar Epitaxial PNP Transistor High Speed low Saturation Switching Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -12V VCEO Collecto
2n2896csm4.pdf
2N2896CSM4MECHANICAL DATADimensions in mm (inches)NPN SILICON TRANSISTOR1.40 0.155.59 0.13(0.055 0.006)(0.22 0.005)0.25 0.03(0.01 0.001)FEATURES0.23rad.(0.009)3 20.23 NPN High Voltage Planar Transistor4 1min.(0.009) Hermetic Ceramic Surface Mount1.02 0.20 2.03 0.20Package(0.04 0.008) (0.08 0.008) Full Screenin
2n2894adcsm.pdf
2N2894ADCSMDUAL HIGH SPEED, MEDIUM POWERPNP GENERAL PURPOSE TRANSISTORIN A HERMETICALLY SEALEDMECHANICAL DATACERAMIC SURFACE MOUNT PACKAGEDimensions in mm (inches)FEATURES SILICON PLANAR EPITAXIAL DUAL PNP2.29 0.20 1.65 0.13 1.40 0.15(0.09 0.008) (0.065 0.005) (0.055 0.006)TRANSISTOR HERMETIC CERAMIC SURFACE MOUNT2 3PACKAGE 1 4 CECC SCR
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
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