2N3791SMD - описание и поиск аналогов

2N3791SMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 60V IC = 10A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

Order this document MOTOROLA by 2N3791/D SEMICONDUCTOR TECHNICAL DATA 2N3791 Silicon PNP Power Transistors 2N3792 . . . designed for medium speed switching and amplifier applications. These devices feature 10 AMPERE Total Switching Time @ 3.0 A [ 1.0 s (typ) POWER TRANSISTORS hFE (min) = 50 @ 1.0 A PNP SILICON Low VCE(sat) = 0.5 V (typ) @ IC = 5.0 A, IB = 0.5 A 60

DATA SHEET 2N3789 2N3790 2N3791 2N3792 PNP POWER TRANSISTORS JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3789 Series types are silicon power transistors manufactured by the epitaxial planar process and designed for medium speed switching and amplifier applications. MAXIMUM RATINGS (TC=25 C unless otherwise noted) 2N3789 2N3790 SYMBOL 2N3791 2N3792 UNITS Col

2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Rat

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N3791 2N3792 DESCRIPTION With TO-3 package Complement to type 2N3715 ,2N3716 Excellent safe operating area APPLICATIONS Designed for medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE M