2N3906N - описание и поиск аналогов

 ..1. Size:173K  auk
 2n3906n.pdf 

2N3906N Semiconductor Semiconductor PNP Silicon Transistor Descriptions General small signal application Switching application Features Low collector-emitter saturation voltage 0.4V (Max.) @ IC=-50mA, IB=-5mA Low collector output capacitance 4.5pF (Max.) @ VCB=-5V, IE=0, f=1MHz Complementary pair with 2N3904N Ordering Information Type NO. Marki

 8.1. Size:199K  motorola
 2n3905 2n3906.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3905/D General Purpose Transistors 2N3905 PNP Silicon * 2N3906 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit CASE 29 04, STYLE 1 Collector Emitter Voltage VCEO 40 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 40 Vdc Emitter Base Voltage

 8.2. Size:52K  philips
 2n3906 3.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3906 PNP switching transistor 1999 Apr 23 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification PNP switching transistor 2N3906 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 collector 2 base APPLICATIONS 3 emitter High-spe

 8.3. Size:61K  st
 2n3906.pdf 

2N3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment 2N3906 2N3906 TO-92 / Bulk 2N3906-AP 2N3906 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE IS 2N3904 TO-92 TO-92 APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT

 8.4. Size:148K  fairchild semi
 2n3906.pdf 

October 2011 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Features This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E C B TO-92 SOT-23 SOT-223 B Mark 2A EBC Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Col

 8.5. Size:106K  fairchild semi
 2n3906 mmbt3906 pzt3906.pdf 

2N3906 MMBT3906 PZT3906 C C E E C C TO-92 B B B E SOT-223 SOT-23 Mark 2A PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -40 V VCBO Collector-Base Vol

 8.6. Size:67K  central
 2n3905 2n3906.pdf 

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 8.7. Size:225K  mcc
 2n3906 to-92.pdf 

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2N3906 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP General Capable of 600mW of Power Disspation and 200mA Ic Epoxy meets UL 94 V-0 flammability rating Purpose Ampl

 8.8. Size:785K  mcc
 2n3906.pdf 

2N3906 Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP General Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Purpose Amplifier Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Range -55

 8.9. Size:173K  onsemi
 2n3906.pdf 

2N3906 General Purpose Transistors PNP Silicon http //onsemi.com Features COLLECTOR Pb-Free Packages are Available* 3 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit 1 EMITTER Collector - Emitter Voltage VCEO 40 Vdc Collector - Base Voltage VCBO 40 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 200 mAdc TO-92 CASE 29 Total Device Dissipation @

 8.10. Size:498K  onsemi
 2n3906 mmbt3906 pzt3906.pdf 

2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E C B TO-92 SOT-23 SOT-223 B Mark 2A EBC Ordering Information Part Number Marking Package Packing Method Pack Quantity 2N3906BU 2N3906 TO-92 3L Bulk 10000

 8.11. Size:434K  onsemi
 2n3906bu 2n3906ta 2n3906tar 2n3906tf 2n3906tfr mmbt3906 pzt3906.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.12. Size:230K  utc
 2n3906g.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage VCEO=40V * Complementary to UTC 2N3904 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2N3906G-AB3-R SOT-89 B C E Tape Reel 2N3906L-T92-B 2N3906G-T92-B TO-92 E B C Tape Box 2N3906

 8.13. Size:186K  utc
 2n3906.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage VCEO=40V * Collector Dissipation Pc(MAX)=625mW 1 * Complementary to UTC 2N3904 TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N3906L-T92-B 2N3906G-T92-B TO-92 E B C Tape Box

 8.14. Size:52K  auk
 2n3906.pdf 

2N3906 Semiconductor Semiconductor PNP Silicon Transistor Descriptions General small signal application Switching application Features Low collector saturation voltage Collector output capacitance Complementary pair with 2N3904 Ordering Information Type NO. Marking Package Code 2N3906 2N3906 T0-92 Outline Dimensions unit mm 3.45 0.1 4.5 0.1 2.25 0

 8.15. Size:495K  no
 2n3904 2n3906 2n5401 2n5551 2sa1271 2sa1273 2sa1275 2sa1276 2sa1366 2sa1657 2sa1658 2sb1366 2sb988 2sc3190 2sc3191 2sc3192.pdf 

 8.16. Size:376K  secos
 2n3906.pdf 

2N3906 -0.2A , -40V PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-92 Power Dissipation PCM 625mW (Ta=25 C) A D Collector Current ICM -200mA Collector Base Voltage V(BR)CBO -40V B CLASSIFICATION OF hFE E C F Product-Rank 2N3906-O 2N3906-Y Range 100

 8.17. Size:3052K  jiangsu
 2n3906.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR (PNP) TO-92 FEATURE PNP silicon epitaxial planar transistor for switching and 1.EMITTER Amplifier applications As complementary type, the NPN transistor 2N3904 is 2.BASE Recommended This transistor is also available in the SOT-23 case with 3. COLLECTOR

 8.18. Size:91K  kec
 2n3906e.pdf 

SEMICONDUCTOR 2N3906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B DIM MILLIMETERS FEATURES _ + A 1.60 0.10 D Low Leakage Current _ + 2 B 0.85 0.10 _ + C 0.70 0.10 ICEX=-50nA(Max.), IBL=-50nA(Max.) 3 1 D 0.27+0.10/-0.05 _ @VCE=-30V, VEB=-3V. E 1.60 0.10 + _ + 1.00 0.10 G Excellent DC Current Gain Linearity.

 8.19. Size:76K  kec
 2n3906c.pdf 

SEMICONDUCTOR 2N3906C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS ICEX=-50nA(Max.), IBL=-50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=-30V, VEB=-3V. G C 3.70 MAX D Excellent DC Current Gain Linearity. D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 VCE(sat)=-0.4V(

 8.20. Size:50K  kec
 2n3906u.pdf 

SEMICONDUCTOR 2N3906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E M B M DIM MILLIMETERS FEATURES _ A + 2.00 0.20 D 2 Low Leakage Current _ + B 1.25 0.15 _ + C 0.90 0.10 ICEX=-50nA(Max.), IBL=-50nA(Max.) 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 @VCE=-30V, VEB=-3V. G 0.65 Excellent DC Current Gain Linearity. H 0.

 8.21. Size:51K  kec
 2n3906.pdf 

SEMICONDUCTOR 2N3906 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS ICEX=-50nA(Max.), IBL=-50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=-30V, VEB=-3V. G C 3.70 MAX D Excellent DC Current Gain Linearity. D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 VCE(sat)=-0.4V(M

 8.22. Size:92K  kec
 2n3906v.pdf 

SEMICONDUCTOR 2N3906V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B FEATURES Low Leakage Current DIM MILLIMETERS 2 _ ICEX=-50nA(Max.), IBL=-50nA(Max.) A 1.2 +0.05 _ B 0.8 +0.05 @VCE=-30V, VEB=-3V. 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 Excellent DC Current Gain Linearity. _ E 1.2 + 0.05 Low Saturation Voltage _ G 0.8

 8.23. Size:687K  kec
 2n3906s.pdf 

SEMICONDUCTOR 2N3906S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L DIM MILLIMETERS _ + FEATURES A 2.93 0.20 B 1.30+0.20/-0.15 Low Leakage Current C 1.30 MAX 2 3 D 0.40+0.15/-0.05 ICEX=-50nA(Max.), IBL=-50nA(Max.) E 2.40+0.30/-0.20 1 G 1.90 @VCE=-30V, VEB=-3V. H 0.95 Excellent DC Current Gain Linearity. J 0

 8.24. Size:561K  kec
 2n3906a.pdf 

SEMICONDUCTOR 2N3906A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS ICEX=-50nA(Max.), IBL=-50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=-30V, VEB=-3V. G C 3.70 MAX D Low Saturation Voltage D 0.45 E 1.00 VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. F 1.27 G 0.85 Low Collect

 8.25. Size:700K  kec
 2n3906sc.pdf 

SEMICONDUCTOR 2N3906SC TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Complementary to 2N3904SC. MAXIMUM RATING (Ta=25 ) CHARACTERIST

 8.26. Size:307K  lge
 2n3906.pdf 

2N3906(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3906 MAXIMUM RATINGS (TA=25 unless otherwise note

 8.27. Size:541K  wietron
 2n3906.pdf 

2N3906 PNP General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current IC -200 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, T

 8.28. Size:51K  hsmc
 h2n3906.pdf 

Spec. No. HE6240 HI-SINCERITY Issued Date 1992.11.25 Revised Date 2005.01.14 MICROELECTRONICS CORP. Page No. 1/5 H2N3906 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N3906 is designed for general purpose switching and amplifier applications. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature......................................................

 8.29. Size:245K  shenzhen
 2n3906.pdf 

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR (PNP) TO-92 FEATURE PNP silicon epitaxial planar transistor for switching and 1.EMITTER Amplifier applications As complementary type, the NPN transistor 2N3904 is 2.BASE Recommended This transistor is also available in the SOT-23 case with 3. COLLECTOR

 8.30. Size:978K  blue-rocket-elect
 2n3906.pdf 

2N3906 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features Low current, Low voltage. / Applications General purpose amplifier. / Equivalent Circuit / Pinning 1 2 3 PIN1

 8.31. Size:148K  semtech
 2n3905 2n3906.pdf 

2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN transistors 2N3903 and 2N3904 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol

 8.32. Size:387K  first silicon
 2n3906e.pdf 

SEMICONDUCTOR 2N3906E TECHNICAL DATA General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Shipping Device Marking 2 2N3906E 2A 3000/Tape & Reel 1 SC 89 MAXIMUM RATINGS Rating Symbol Value Unit 3 Collector Emitter Voltage V 40 Vdc CEO COLLECTOR Collector Base Voltage V CBO 4

 8.33. Size:437K  first silicon
 2n3906 to92.pdf 

SEMICONDUCTOR 2N3906 TECHNICAL DATA FEATURE TO-92 PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended 1.EMITTER 2.BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage -40 V VCEO Collector-Emitt

 8.34. Size:603K  first silicon
 2n3906u.pdf 

SEMICONDUCTOR 2N3906U TECHNICAL DATA General Purpose Transistors PNP Silicon FEATURES We declare that the material of product compliant with RoHS requirements and Halogen Free. DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping 2N3906U 2A 3000/Tape&Reel 1 2 SC-70 / SOT 323 MAXIMUM RATINGS(Ta = 25 ) Parameter Symbol Limits Unit Collector Emitte

 8.35. Size:199K  first silicon
 2n3906s.pdf 

SEMICONDUCTOR 2N3906S TECHNICAL DATA General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Marking Shipping 2 2N3906S 2A 3000/Tape & Reel 1 SOT 23 MAXIMUM RATINGS Rating Symbol Value Unit 3 Collector Emitter Voltage V 40 Vdc CEO COLLECTOR Collector Base Voltage V CBO 40

 8.36. Size:69K  comchip
 2n3906-g.pdf 

General Purpose Transistor 2N3906-G (PNP) RoHS Device TO-92 Features -PNP silicon epitaxial planar transistor for 0.185(4.70) switching and amplifier application. 0.173(4.40) -As complementary type, the NPN transistor 0.135 (3.43) Min. 0.055 (1.14) 0.020(0.51) 0.043(1. 10) 2N3904-G is recommended. 0.014(0.36) 0.022(0.55) 0.015(0.38) -This transistor is available in the S

 8.37. Size:1737K  slkor
 2n3906.pdf 

2N3906 / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features / Applications Low current, Low voltage. General purpose amplifier. / Equivalent Circuit / Pinning 1 2 3 PIN1 Collector PIN 2 Base PIN 3 Emitter

 8.38. Size:1285K  sprague
 2n3906 2n3973 2n3974 2n3975 2n3976 2n4058 2n4059 2n4060 2n4061 2n4062 2n4123 2n4124 2n4125 2n4126 2n4256 2n4264.pdf 

 8.39. Size:2011K  jsmsemi
 2n3906.pdf 

 8.40. Size:1422K  cn cbi
 2n3906u.pdf 

Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Compliment to 2N3904U Low current Low voltage MARKING 2A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.5 W Th

 8.41. Size:202K  inchange semiconductor
 2n3906.pdf 

isc Silicon PNP Power Transistor 2N3906 DESCRIPTION Low voltage( max .40V ) Low current ( max .200mA ) NPN complement to Type 2N3904. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching Amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo

 8.42. Size:207K  inchange semiconductor
 2n3906s.pdf 

isc Silicon PNP Power Transistor 2N3906S DESCRIPTION Low voltage( max .40V ) Low current ( max .200mA ) APPLICATIONS Designed for high-speed switching Amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -40 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuo