2N4403SC. Аналоги и основные параметры
Наименование производителя: 2N4403SC
Маркировка: ZWC
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.35 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.6 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 250 MHz
Ёмкость коллекторного перехода (Cc): 8.5 pf
Статический коэффициент передачи тока (hFE): 150
Корпус транзистора: SOT-23
Аналоги (замена) для 2N4403SC
- подборⓘ биполярного транзистора по параметрам
2N4403SC даташит
..1. Size:346K kec
2n4403sc.pdf 
SEMICONDUCTOR 2N4403SC TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES Complementary to the 2N4401SC DIM MILLIMETERS _ + A 2.90 0.1 2 3 B 1.30+0.20/-0.15 C 1.30 MAX 1 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 J 0.10 K 0.00 0.10 MAXIMUM RATING (Ta=25 ) L 0.55 M 0.20 MIN CHARACTERISTIC SYMBOL RAT
8.1. Size:297K motorola
2n4402 2n4403.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4402/D General Purpose Transistors 2N4402 PNP Silicon * 2N4403 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 40 Vdc Collector Base Voltage VCBO 40 Vdc Emitter Base Voltage
8.2. Size:52K philips
2n4403 3.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4403 PNP switching transistor 1999 Apr 23 Product specification Supersedes data of 1997 May 05 Philips Semiconductors Product specification PNP switching transistor 2N4403 FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 collector 2 base APPLICATIONS 3 emitter Industr
8.3. Size:69K fairchild semi
2n4403 mmbt4403.pdf 
2N4403 MMBT4403 C E C TO-92 B SOT-23 B E Mark 2T PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage40V VEBO Emitter-Base Voltage 5.0
8.4. Size:54K samsung
2n4402-2n4403.pdf 
2N4402/4403 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 Collector-Emitter Voltage VCEO= 40V Collector Dissipation PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Collector Dissipation
8.5. Size:51K rohm
umt4403 sst4403 mmst4403 2n4403.pdf 
Transistors UMT4403 / SST4403 / MMST4403 / 2N4403 (SPEC-A31) 602 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon act
8.6. Size:63K central
2n4402 2n4403.pdf 
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
8.7. Size:233K mcc
2n4403.pdf 
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2N4403 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Through Hole Package Capable of 600mWatts of Power Dissipation PNP General Epoxy meets UL 94 V-0 flammability rating Purpose Amplifier Moisure Sensitivity Level 1 Marking Type number Lead Free
8.8. Size:118K onsemi
2n4403g.pdf 
2N4403 Preferred Device General Purpose Transistors PNP Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO 40 Vdc 1 EMITTER Collector - Base Voltage VCBO 40 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 600 mAdc Total Device Dissipatio
8.9. Size:118K onsemi
2n4403-d.pdf 
2N4403 Preferred Device General Purpose Transistors PNP Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO 40 Vdc 1 EMITTER Collector - Base Voltage VCBO 40 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 600 mAdc Total Device Dissipatio
8.10. Size:391K onsemi
2n4403bu 2n4403tf 2n4403tfr 2n4403ta 2n4403tar mmbt4403.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.11. Size:140K utc
2n4403.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2N4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. *Pb-free plating product number 2N4403L ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 2N4403-T9
8.12. Size:725K secos
2n4403.pdf 
2N4403 PNP Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55 0.2 3.5 0.2 FEATURES Power Dissipation o C MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Value Units Parameter Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Volta
8.13. Size:531K jiangsu
2n4403.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4403 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMILTTER 2. BASE 3. COLLECTOR Equivalent Circuit 2N4403 = Device code 2 N Solid dot = Green molding compound device, 4 4 0 3 if none, the normal device XX XXX XXX = Code
8.14. Size:268K lge
2n4403.pdf 
2N4403(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 mA PC Collector Power dissipation 0.625 W
8.15. Size:311K wietron
2n4403.pdf 
2N4403 General Purpose Transistors TO-92 PNP Silicon COLLECTOR 3 2 BASE 1 1. EMITTER 2 3 1 2. BASE EMITTER 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2N4403 Unit Collector-Emitter Voltage V CEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC -600 mAdc Total Device Dissipation T =25 C PD 625 mW A Ju
8.16. Size:53K hsmc
h2n4403.pdf 
Spec. No. HE6221 HI-SINCERITY Issued Date 1992.09.30 Revised Date 2004.08.13 MICROELECTRONICS CORP. Page No. 1/5 H2N4403 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N4403 is designed for general purpose switching and amplifier applications. Features TO-92 Complementary to H2N4401 High Power Dissipation 625mW at 25 C High DC Current Gain 100-300 at 150m
8.17. Size:295K cystek
2n4403a3.pdf 
Spec. No. C305A3 Issued Date 2003.06.13 CYStech Electronics Corp. Revised Date 2014.05.12 Page No. 1/8 General Purpose PNP Epitaxial Planar Transistor 2N4403A3 Description The 2N4403A3 is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC Max .= -0.6A Low VCE(sat), typically -0.2V at IC/IB = -300mA / -30mA.
8.18. Size:955K blue-rocket-elect
2n4403.pdf 
2N4403 Rev.F Sep.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features High current, Low voltage. / Applications 500mA General purpose amplifier and switch requiring collector currents u
8.19. Size:330K semtech
2n4402 2n4403.pdf 
2N4402 / 2N4403 PNP Epitaxial Silicon Transistor General purpose transistor On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage
8.20. Size:327K first silicon
2n4403.pdf 
SEMICONDUCTOR 2N4403 TECHNICAL DATA General Purpose Transistors PNP Silicon ORDERING INFORMATION 3 Device Marking Shipping 2 2N4403LT1G 2T 3000/Tape & Reel 1 SOT 23 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 40 Vdc 3 Collector Base Voltage V CBO 40 Vdc COLLECTOR Emitter Base Voltage V EBO 5.0 Vdc Collector Current Cont
Другие транзисторы: 2N4209C1A, 2N4209C1B, 2N4236X, 2N4261UBC, 2N4401G, 2N4401L, 2N4401SC, 2N4403G, BC546, 2N4449UB, 2N4854U, 2N4897X, 2N4898X, 2N4899X, 2N4900X, 2N4901SMD, 2N4910XSMD
