2N4928DCSM. Аналоги и основные параметры
Наименование производителя: 2N4928DCSM
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.4 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Статический коэффициент передачи тока (hFE): 20
Корпус транзистора: LCC2
Аналоги (замена) для 2N4928DCSM
- подборⓘ биполярного транзистора по параметрам
2N4928DCSM даташит
..1. Size:10K semelab
2n4928dcsm.pdf 
2N4928DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 100V CEO 6.22 0.13 A = 1.27 0.13 I = 0.1A C (0.
8.2. Size:16K semelab
2n4928csm.pdf 
2N4928CSM GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA FOR HIGH RELIABILITY APPLICATIONS Dimensions in mm (inches) 0.51 0.10 FEATURES (0.02 0.004) 0.31 rad. (0.012) SILICON PNP TRANSISTOR 3 HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) CECC SCREENING OPTIONS 21 SPACE QUALITY LEVELS OPTIONS
9.1. Size:254K motorola
2n4918 2n4919 2n4920.pdf 
Order this document MOTOROLA by 2N4918/D SEMICONDUCTOR TECHNICAL DATA 2N4918 Medium-Power Plastic PNP thru Silicon Transistors * 2N4920 . . . designed for driver circuits, switching, and amplifier applications. These high performance plastic devices feature *Motorola Preferred Device Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp 3 AMPERE Excellent
9.2. Size:238K motorola
2n4921 2n4922 2n4923.pdf 
Order this document MOTOROLA by 2N4921/D SEMICONDUCTOR TECHNICAL DATA 2N4921 Medium-Power Plastic NPN thru Silicon Transistors 2N4923 * . . . designed for driver circuits, switching, and amplifier applications. These high performance plastic devices feature *Motorola Preferred Device Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp 1 AMPERE Excellent
9.4. Size:113K onsemi
2n4918 2n4919 2n4920.pdf 
ON Semiconductor) 2N4918 Medium-Power Plastic PNP thru Silicon Transistors * 2N4920 . . . designed for driver circuits, switching, and amplifier *ON Semiconductor Preferred Device applications. These high performance plastic devices feature 3 AMPERE Low Saturation Voltage GENERAL PURPOSE VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp POWER TRANSISTORS 40 80 VOLTS Exc
9.5. Size:117K onsemi
2n4920g9285.pdf 
2N4918 - 2N4920* Series Preferred Device Medium-Power Plastic PNP Silicon Transistors These medium-power, high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. http //onsemi.com Features Pb-Free Package is Available** 3.0 A, 40-80 V, 30 W Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dis
9.6. Size:263K onsemi
2n4918 2n4919 2n4920 2n4920g.pdf 
2N4918 - 2N4920 Series Medium-Power Plastic PNP Silicon Transistors These medium-power, high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. http //onsemi.com Features Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dissipation, PD = 30 W @ TC = 25_C 3.0 A, 40-80 V, 30 W Excellent Safe Oper
9.7. Size:91K onsemi
2n4921g.pdf 
2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http //onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A 1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction - PD = 30
9.8. Size:91K onsemi
2n4923g.pdf 
2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http //onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A 1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction - PD = 30
9.9. Size:90K onsemi
2n4921 2n4922 2n4923.pdf 
2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http //onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A 1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction - PD = 30
9.10. Size:91K onsemi
2n4922g.pdf 
2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http //onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A 1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction - PD = 30
9.11. Size:241K onsemi
2n4921g 2n4922g 2n4923g.pdf 
2N4921G, 2N4922G, 2N4923G Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. www.onsemi.com Features 1.0 AMPERE Low Saturation Voltage GENERAL PURPOSE Excellent Power Dissipation POWER TRANSISTORS Excellent Safe Operating Area 40-80 VOLTS, 30 WATTS Complement
9.12. Size:11K semelab
2n4925.pdf 
2N4925 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 150V dia. IC = 0.2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1
9.13. Size:11K semelab
2n4924.pdf 
2N4924 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 100V dia. IC = 0.2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1
9.14. Size:194K cdil
2n4923.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR 2N4923 TO-126 E C B General Purpose Power Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C) DESCRIPTION VALUE UNIT Collector -Base Voltage VCBO 80 V Collector -Emitter Voltage VCEO 80 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 3.0 A Bas
9.15. Size:41K jmnic
2n4918 2n4919 2n4920.pdf 
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION With TO-126 package Complement to type 2N4921,2N4922 2N4923 Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to
9.16. Size:41K jmnic
2n4921 2n4922 2n4923.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION With TO-126 package Complement to type 2N4918,2N4919 2N4920 Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to
9.17. Size:214K inchange semiconductor
2n4922.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N4922 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Low Collector Saturatioin Voltage- V = 0.6V(Max.)@ I = 1A CE(sat) C Wide Area of Safe Operation Complement to Type 2N4919 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for d
9.18. Size:118K inchange semiconductor
2n4918 2n4919 2n4920.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION With TO-126 package Complement to type 2N4921/4922/4923 Excellent safe operating area Low collector saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2
9.19. Size:118K inchange semiconductor
2n4921 2n4922 2n4923.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION With TO-126 package Complement to type 2N4918/4919/4920 Excellent safe operating area Low collector saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2
9.20. Size:174K inchange semiconductor
2n4923.pdf 
isc Silicon NPN Power Transistor 2N4923 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector Saturation Voltage- V = 0.6V(Max.)@ I = 1A CE(sat) C Wide Area of Safe Operation Complement to Type 2N4920 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver circuits, switching
Другие транзисторы: 2N4911XSMD05, 2N4918G, 2N4919G, 2N4920G, 2N4921G, 2N4922G, 2N4923G, 2N4928CSM, 2SC2655, 2N4939DCSM, 2N5001SMD, 2N5010S, 2N5011S, 2N5012S, 2N5013S, 2N5014S, 2N5015SX
