Биполярный транзистор 2N5087G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N5087G
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.625 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 40 MHz
Ёмкость коллекторного перехода (Cc): 4 pf
Статический коэффициент передачи тока (hfe): 250
Корпус транзистора: TO-92
2N5087G Datasheet (PDF)
2n5087g.pdf
2N5087Preferred Device Amplifier TransistorPNP SiliconFeatures Pb-Free Packages are Available*http://onsemi.com3 COLLECTORMAXIMUM RATINGS2BASERating Symbol Value UnitCollector-Emitter Voltage VCEO 50 Vdc1 EMITTERCollector-Base Voltage VCBO 50 VdcEmitter-Base Voltage VEBO 3.0 VdcCollector Current - Continuous IC 50 mAdcTO-92Total Device Dissipation @ TA = 2
2n5087rev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5087/DAmplifier TransistorPNP Silicon2N5087COLLECTOR3Motorola Preferred Device2BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 50 VdcCollectorBase Voltage VCBO 50 VdcEmitterBase Voltage VEBO 3.0 VdcColle
2n5086 2n5087.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5086/DAmplifier Transistors2N5086PNP Silicon*2N5087*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER 123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 50 VdcCollectorBase Voltage VCBO 50 VdcEmitterBase Voltage VEBO 3.
2n5087 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5087PNP general purpose transistorProduct specification 1997 Jul 02Supersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP general purpose transistor 2N5087FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 50 V).1
2n5086 2n5087 mmbt5087.pdf
2N5086/2N5087/MMBT5087PNP General Purpose Amplifier3 This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA.2SOT-23TO-92 1Mark: 2Q11. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collect
2n5086 2n5087.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5087rlrag.pdf
2N5087Preferred Device Amplifier TransistorPNP SiliconFeatures Pb-Free Packages are Available*http://onsemi.com3 COLLECTORMAXIMUM RATINGS2BASERating Symbol Value UnitCollector-Emitter Voltage VCEO 50 Vdc1 EMITTERCollector-Base Voltage VCBO 50 VdcEmitter-Base Voltage VEBO 3.0 VdcCollector Current - Continuous IC 50 mAdcTO-92Total Device Dissipation @ TA = 2
2n5087-d.pdf
2N5087Preferred Device Amplifier TransistorPNP SiliconFeatures Pb-Free Packages are Available*http://onsemi.com3 COLLECTORMAXIMUM RATINGS2BASERating Symbol Value UnitCollector-Emitter Voltage VCEO 50 Vdc1 EMITTERCollector-Base Voltage VCBO 50 VdcEmitter-Base Voltage VEBO 3.0 VdcCollector Current - Continuous IC 50 mAdcTO-92Total Device Dissipation @ TA = 2
h2n5087.pdf
Spec. No. : HE6210HI-SINCERITYIssued Date : 1998.02.01Revised Date : 2005.01.20MICROELECTRONICS CORP.Page No. : 1/5H2N5087PNP EPITAXIAL PLANAR TRANSISTORDescriptionThis device was designed for low noise,high gain,general purpose amplifierapplications for 1uA to 25mA collector current.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ...........
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
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