Справочник транзисторов. 2N5087RLRAG

 

Биполярный транзистор 2N5087RLRAG - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N5087RLRAG
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.625 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
   Макcимальный постоянный ток коллектора (Ic): 0.05 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 40 MHz
   Ёмкость коллекторного перехода (Cc): 4 pf
   Статический коэффициент передачи тока (hfe): 250
   Корпус транзистора: TO-92

 Аналоги (замена) для 2N5087RLRAG

 

 

2N5087RLRAG Datasheet (PDF)

 ..1. Size:156K  onsemi
2n5087rlrag.pdf

2N5087RLRAG
2N5087RLRAG

2N5087Preferred Device Amplifier TransistorPNP SiliconFeatures Pb-Free Packages are Available*http://onsemi.com3 COLLECTORMAXIMUM RATINGS2BASERating Symbol Value UnitCollector-Emitter Voltage VCEO 50 Vdc1 EMITTERCollector-Base Voltage VCBO 50 VdcEmitter-Base Voltage VEBO 3.0 VdcCollector Current - Continuous IC 50 mAdcTO-92Total Device Dissipation @ TA = 2

 7.1. Size:300K  motorola
2n5087rev0.pdf

2N5087RLRAG
2N5087RLRAG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5087/DAmplifier TransistorPNP Silicon2N5087COLLECTOR3Motorola Preferred Device2BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 50 VdcCollectorBase Voltage VCBO 50 VdcEmitterBase Voltage VEBO 3.0 VdcColle

 8.1. Size:434K  motorola
2n5086 2n5087.pdf

2N5087RLRAG
2N5087RLRAG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5086/DAmplifier Transistors2N5086PNP Silicon*2N5087*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER 123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 50 VdcCollectorBase Voltage VCBO 50 VdcEmitterBase Voltage VEBO 3.

 8.2. Size:49K  philips
2n5087 cnv 2.pdf

2N5087RLRAG
2N5087RLRAG

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5087PNP general purpose transistorProduct specification 1997 Jul 02Supersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP general purpose transistor 2N5087FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 50 V).1

 8.3. Size:100K  fairchild semi
2n5086 2n5087 mmbt5087.pdf

2N5087RLRAG
2N5087RLRAG

2N5086/2N5087/MMBT5087PNP General Purpose Amplifier3 This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA.2SOT-23TO-92 1Mark: 2Q11. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collect

 8.4. Size:60K  central
2n5086 2n5087.pdf

2N5087RLRAG

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 8.5. Size:156K  onsemi
2n5087g.pdf

2N5087RLRAG
2N5087RLRAG

2N5087Preferred Device Amplifier TransistorPNP SiliconFeatures Pb-Free Packages are Available*http://onsemi.com3 COLLECTORMAXIMUM RATINGS2BASERating Symbol Value UnitCollector-Emitter Voltage VCEO 50 Vdc1 EMITTERCollector-Base Voltage VCBO 50 VdcEmitter-Base Voltage VEBO 3.0 VdcCollector Current - Continuous IC 50 mAdcTO-92Total Device Dissipation @ TA = 2

 8.6. Size:155K  onsemi
2n5087-d.pdf

2N5087RLRAG
2N5087RLRAG

2N5087Preferred Device Amplifier TransistorPNP SiliconFeatures Pb-Free Packages are Available*http://onsemi.com3 COLLECTORMAXIMUM RATINGS2BASERating Symbol Value UnitCollector-Emitter Voltage VCEO 50 Vdc1 EMITTERCollector-Base Voltage VCBO 50 VdcEmitter-Base Voltage VEBO 3.0 VdcCollector Current - Continuous IC 50 mAdcTO-92Total Device Dissipation @ TA = 2

 8.7. Size:49K  hsmc
h2n5087.pdf

2N5087RLRAG
2N5087RLRAG

Spec. No. : HE6210HI-SINCERITYIssued Date : 1998.02.01Revised Date : 2005.01.20MICROELECTRONICS CORP.Page No. : 1/5H2N5087PNP EPITAXIAL PLANAR TRANSISTORDescriptionThis device was designed for low noise,high gain,general purpose amplifierapplications for 1uA to 25mA collector current.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ...........

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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