Справочник транзисторов. 2N5151U3

 

Биполярный транзистор 2N5151U3 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N5151U3
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 10 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5.5 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Предельная температура PN-перехода (Tj): 200 °C
   Граничная частота коэффициента передачи тока (ft): 70 MHz
   Ёмкость коллекторного перехода (Cc): 250 pf
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: U-3

 Аналоги (замена) для 2N5151U3

 

 

2N5151U3 Datasheet (PDF)

 ..1. Size:184K  microsemi
2n5151u3.pdf

2N5151U3
2N5151U3

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 DEVICES LEVELS JAN 2N5151 2N5153JANTX 2N5151L 2N5153LJANTXV 2N5151U3 2N5153U3JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Te

 8.1. Size:78K  central
2n5151 2n5152 2n5153 2n5154.pdf

2N5151U3

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 8.2. Size:20K  semelab
2n5151 2n5153.pdf

2N5151U3
2N5151U3

2N51512N5153MECHANICAL DATAHIGH SPEED Dimensions in mm (inches)8.89 (0.35)9.40 (0.37) MEDIUM VOLTAGE 7.75 (0.305)8.51 (0.335)SWITCHES4.19 (0.165)4.95 (0.195)DESCRIPTION0.89max.(0.035)12.70The 2N5151 and the 2N5153 are silicon(0.500)7.75 (0.305)min.8.51 (0.335)expitaxial planar PNP transistors india.jedec TO-39 metal case intended foruse in switc

 8.3. Size:19K  semelab
2n5151xsmd05.pdf

2N5151U3
2N5151U3

MECHANICAL DATAPNP BIPOLAR TRANSISTOR IN ADimensions in mm (inches)CERAMIC SURFACE MOUNT7.54 (0.296)PACKAGE FOR HIGH-REL AND0.76 (0.030)min.3.175 (0.125)SPACE APPLICATIONS 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005)1 3DESCRIPTION2The 2N5151XSMD05 is a silicon expitaxialplanar PNP transistor in a Ceramic SurfaceMount Package for use in Switching and 0.127 (

 8.4. Size:27K  semelab
2n5151smd05.pdf

2N5151U3
2N5151U3

2N5151SMD052N5153SMD05MECHANICAL DATAPNP BIPOLAR TRANSISTOR IN ADimensions in mm (inches)CERAMIC SURFACE MOUNTPACKAGE FOR HIGH-REL ANDSPACE APPLICATIONS DESCRIPTION !The 2N5151SMD05 and the 2N5153SMD05 aresilicon expitaxial planar PNP transistors in aCeramic S

 8.5. Size:21K  semelab
2n5151-220m.pdf

2N5151U3
2N5151U3

2N5151-220M2N5153-220MMECHANICAL DATADimensions in mm (inches)4.70HIGH SPEED 5.0010.410.7010.67MEDIUM VOLTAGE 0.90SWITCHES3.56Dia.3.81DESCRIPTION1 2 3The 2N5151-220M and the 2N5153-220M aresilicon expitaxial planar PNP transistors inTO-220 (JEDEC TO-257AB) metal caseintended for use in switching applications.The complementary NPN types are the0.89 2

 8.6. Size:229K  aeroflex
2n5151 2n5151l 2n5153 2n5153l.pdf

2N5151U3
2N5151U3

PNP Power Silicon Transistor2N5151, 2N5151L & 2N5153, 2N5153LFeatures Available in commercial, JAN, JANTX, JANTXV, JANSand JANSR 100K rads (Si) per MIL-PRF-19500/545 TO-5 Package: 2N5151L, 2N5153LTO-39 (TO-205AD) Package: 2N5151, 2N5153Maximum Ratings (TC = +25C unless otherwise noted)Ratings Symbol Value UnitsCollector - Emitter Voltage VCEO 80 VdcCollector - Base V

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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