Справочник транзисторов. 2N5192G

 

Биполярный транзистор 2N5192G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N5192G
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 40 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 4 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 2 MHz
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: TO-225AA

 Аналоги (замена) для 2N5192G

 

 

2N5192G Datasheet (PDF)

 ..1. Size:139K  onsemi
2n5190g 2n5191g 2n5192g.pdf

2N5192G
2N5192G

2N5190G, 2N5191G,2N5192GSilicon NPN PowerTransistorsSilicon NPN power transistors are for use in power amplifier andswitching circuits - excellent safe area limits. Complement to PNPhttp://onsemi.com2N5194, 2N5195.4.0 AMPERESFeaturesNPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in.POWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant*40, 60, 80 VOLTS -

 ..2. Size:84K  onsemi
2n5192g.pdf

2N5192G
2N5192G

2N5190, 2N5191, 2N5192Silicon NPN PowerTransistorsSilicon NPN power transistors are for use in power amplifier andswitching circuits, excellent safe area limits. Complement to PNP2N5194, 2N5195.http://onsemi.comFeatures ESD Ratings: Machine Model, C; > 400 V 4.0 AMPERESHuman Body Model, 3B; > 8000 VNPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in.POWER TRANSISTORS

 8.1. Size:217K  motorola
2n5191 2n5192.pdf

2N5192G
2N5192G

Order this documentMOTOROLAby 2N5191/DSEMICONDUCTOR TECHNICAL DATA2N51912N5192*Silicon NPN Power Transistors*Motorola Preferred Device. . . for use in power amplifier and switching circuits, excellent safe area limits.Complement to PNP 2N5194, 2N5195.4 AMPEREPOWER TRANSISTORS

 8.2. Size:230K  st
2n5191 2n5192.pdf

2N5192G
2N5192G

2N51912N5192NPN power transistorsFeatures NPN transistorsApplications Linear and switching industrial equipmentDescription12The devices are manufactured in Planar 3technology with Base Island layout. The SOT-32resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type of 2N5192 is 2N5195.Figure

 8.3. Size:61K  central
2n5190 2n5191 2n5192.pdf

2N5192G

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 8.4. Size:84K  onsemi
2n5190 2n5191 2n5192.pdf

2N5192G
2N5192G

2N5190, 2N5191, 2N5192Silicon NPN PowerTransistorsSilicon NPN power transistors are for use in power amplifier andswitching circuits, excellent safe area limits. Complement to PNP2N5194, 2N5195.http://onsemi.comFeatures ESD Ratings: Machine Model, C; > 400 V 4.0 AMPERESHuman Body Model, 3B; > 8000 VNPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in.POWER TRANSISTORS

 8.5. Size:42K  jmnic
2n5190 2n5191 2n5192.pdf

2N5192G
2N5192G

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5190 2N5191 2N5192 DESCRIPTION With TO-126 package Complement to type 2N5193,2N5194,2N5195 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum

 8.6. Size:118K  inchange semiconductor
2n5190 2n5191 2n5192.pdf

2N5192G
2N5192G

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5190 2N5191 2N5192 DESCRIPTION With TO-126 package Complement to type 2N5193/5194/5195 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute max

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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