Биполярный транзистор 2N5415UA
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N5415UA
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 2
W
Макcимально допустимое напряжение коллектор-база (Ucb): 200
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 1
A
Предельная температура PN-перехода (Tj): 200
°C
Ёмкость коллекторного перехода (Cc): 15
pf
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора:
TO-5
Аналоги (замена) для 2N5415UA
2N5415UA
Datasheet (PDF)
..1. Size:934K no
2n5415ua.pdf INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA
7.1. Size:934K no
2n5415u4.pdf INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA
8.1. Size:51K philips
2n5415 2n5416 cnv 2.pdf DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N5415; 2N5416PNP high-voltage transistors1997 May 21Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP high-voltage transistors 2N5415; 2N5416FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION High voltage (m
8.2. Size:51K philips
2n5415 2n5416.pdf DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N5415; 2N5416PNP high-voltage transistors1997 May 21Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP high-voltage transistors 2N5415; 2N5416FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION High voltage (m
8.3. Size:45K st
2n5415 2n5416.pdf 2N54152N5416SILICON PNP TRANSISTORS STMicroelectronics PREFERREDSALESTYPES PNP TRANSISTORSDESCRIPTION The 2N5415, 2N5416 are high voltage siliconepitaxial planar PNP transistors in Jedec TO-39metal case designed for use in consumer andindustrial line-operated applications.These devices are particularly suited as drivers inhigh-voltage low current inverters, switching
8.4. Size:47K st
2n5415 2n5416 .pdf 2N54152N5416SILICON PNP TRANSISTORS STMicroelectronics PREFERREDSALESTYPES PNP TRANSISTORSDESCRIPTION The 2N5415, 2N5416 are high voltage siliconepitaxial planar PNP transistors in Jedec TO-39metal case designed for use in consumer andindustrial line-operated applications.These devices are particularly suited as drivers inhigh-voltage low current inverters, switching
8.5. Size:64K central
2n5415 2n5416 2.pdf 145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
8.6. Size:140K cdil
2n5415 2n5416.pdf Continental Device India LimitedAn ISO/TS16949 and ISO 9001 Certified CompanyPNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16TO-39Metal Can PackageHigh Speed Switching and Linear amplifier Appliances in Military,Industrial and Commercial Equipment.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 2N5415 2N5416 UNITSVCEOCollector Emitter Voltage
8.7. Size:201K cdil
2n5415 16.pdf Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16TO-39Metal Can PackageHigh Speed Switching and Linear amplifier Appliances in Military,Industrial and Commercial Equipment.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 2N5415 2N5416 UNITSVCEOCollector Emit
8.8. Size:143K china
3ca5415 2n5415.pdf 3CA5415(2N5415) PNP PCM TC=25 10 W ICM 1 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 200 V V(BR)CEO ICE=0.1mA 200 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=175V 50 A ICEO VEB=150V 50 A IEBO VEB=4V 20 A IC=0.05A VCEsat 2.5 V IB=0.
Другие транзисторы... 2N3192
, 2N3193
, 2N3194
, 2N3195
, 2N3196
, 2N3197
, 2N3198
, 2N3199
, BC327
, 2N320
, 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
.