Биполярный транзистор 2N5686G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N5686G
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 50 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 2 MHz
Ёмкость коллекторного перехода (Cc): 1200 pf
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO-204
2N5686G Datasheet (PDF)
2n5686g.pdf
2N5684 (PNP), 2N5686 (NPN)High-CurrentComplementary SiliconPower TransistorsThese packages are designed for use in high-power amplifier andswitching circuit applications.http://onsemi.comFeatures50 AMPERE High Current Capability - IC Continuous = 50 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15 - 60 @ IC = 25 AdcPOWER TRANSISTORS Low Collector-Emitte
2n5684 2n5685 2n5686.pdf
Order this documentMOTOROLAby 2N5684/DSEMICONDUCTOR TECHNICAL DATAPNP2N5684High-Current ComplementaryNPNSilicon Power Transistors2N5685. . . designed for use in highpower amplifier and switching circuit applications. High Current Capability IC Continuous = 50 Amperes.*2N5686 DC Current Gain hFE = 1560 @ IC = 25 Adc Low CollectorEmitter Sa
2n5684 2n5686.pdf
2N5684 (PNP), 2N5686 (NPN)High-CurrentComplementary SiliconPower TransistorsThese packages are designed for use in high-power amplifier andswitching circuit applications.http://onsemi.comFeatures50 AMPERE High Current Capability - IC Continuous = 50 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15 - 60 @ IC = 25 AdcPOWER TRANSISTORS Low Collector-Emitte
2n5679 2n5680 2n5681 2n5682.pdf
DATA SHEET2N5679 2N5680 PNP 2N5681 2N5682 NPN COMPLEMENTARY SILICON HIGH POWER TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5679 Series types are complementary silicon high power transistors manufactured by the epitaxial planar process and designed for general-purpose amplifier and switching applications where high voltages are required. MAXIMUM RATIN
2n5684g.pdf
2N5684 (PNP), 2N5686 (NPN)High-CurrentComplementary SiliconPower TransistorsThese packages are designed for use in high-power amplifier andswitching circuit applications.http://onsemi.comFeatures50 AMPERE High Current Capability - IC Continuous = 50 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15 - 60 @ IC = 25 AdcPOWER TRANSISTORS Low Collector-Emitte
2n5681smd05.pdf
2N5681SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 100V IC = 1A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab her
2n5679 2n5680 2n5681 2n5682.pdf
IS/ISO 9002 IS / IECQC 700000Lic# QSC/L- 000019.2 IS / IECQC 750100Continental Device India LimitedAn IS/ISO 9002 and IECQ Certified ManufacturerPNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681 2N5680 2N5682 PNP NPNTO-39 TO-39Boca Semiconductor Corp. BSCThese Are High Voltage & High Current, General Purpose TransistorsABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL 2N5
2n5679 2n5680 81 82.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681 2N5680 2N5682 PNP NPNTO-39 TO-39These Are High Voltage & High Current, General Purpose TransistorsABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL 2N5679 2N5680 UNITS2N5681 2N5682Collector -Emitter Voltage VCEO 100 120 VCollector -Base
2n5679 2n5680.pdf
PNP Power Silicon Transistor2N5679 & 2N5680Features Available in JAN, JANTX and JANTXVper MIL-PRF-19500/582 TO-39 (TO-205AD) PackageMaximum Ratings (TA = 25C unless otherwise noted)Ratings Symbol 2N5679 2N5680 UnitsCollector - Emitter Voltage VCEO 100 120 VdcCollector - Base Voltage VCBO 100 120 VdcEmitter - Base Voltage VEBO 4.0 4.0 VdcCollector Current IC 1.0 1.0
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050