2N5883, 2N5884 (PNP)2N5885, 2N5886 (NPN)2N5884 and 2N5886 are Preferred DevicesComplementary SiliconHigh-Power TransistorsComplementary silicon high-power transistors are designed forgeneral-purpose power amplifier and switching applications.Features25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage -SILICON POWER TRANSISTORSVCE(sat) = 1.0 Vdc, (max) at IC

Order this documentMOTOROLAby 2N5883/DSEMICONDUCTOR TECHNICAL DATAPNP2N5883Complementary SiliconHigh-Power Transistors2N5884*NPN. . . designed for generalpurpose power amplifier and switching applications. Low CollectorEmitter Saturation Voltage 2N5885VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current2N5886*ICEX = 1.0 mAdc (max) at Rated

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2N5883, 2N5884 (PNP)2N5885, 2N5886 (NPN)2N5884 and 2N5886 are Preferred DevicesComplementary SiliconHigh-Power TransistorsComplementary silicon high-power transistors are designed forgeneral-purpose power amplifier and switching applications.http://onsemi.comFeatures25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage -SILICON POWER TRANSISTORSVCE(sat) = 1

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Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5883 2N5884 DESCRIPTION With TO-3 package Complement to type 2N5885 2N5886 APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PAR

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5883 2N5884 DESCRIPTION With TO-3 package Complement to type 2N5885 2N5886 High power dissipations APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute