2N6301SMD05 datasheet, аналоги, основные параметры
Наименование производителя: 2N6301SMD05 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 200 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 4 MHz
Ёмкость коллекторного перехода (Cc): 200 pf
Статический коэффициент передачи тока (hFE): 750
Корпус транзистора: TO276AA
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Аналоги (замена) для 2N6301SMD05
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2N6301SMD05 даташит
..1. Size:25K semelab
2n6299smd05 2n6299smd 2n6301smd 2n6301smd05.pdf 
2N6299SMD 2N6299SMD05 2N6301SMD 2N6301SMD05 MECHANICAL DATA Dimensions in mm (inches) COMPLEMENTARY SILICON POWER TRANSISTORS 2N6299SMD - PNP TRANSISTOR 2N6301SMD - NPN TRANSISTOR Designed for general
..2. Size:25K semelab
2n6301smd05.pdf 
2N6299SMD 2N6299SMD05 2N6301SMD 2N6301SMD05 MECHANICAL DATA Dimensions in mm (inches) COMPLEMENTARY SILICON POWER TRANSISTORS 2N6299SMD - PNP TRANSISTOR 2N6301SMD - NPN TRANSISTOR Designed for general
8.1. Size:184K aeroflex
2n6300 2n6301.pdf 
NPN Darlington Power Silicon Transistor 2N6300 & 2N6301 Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/539 TO-66 (TO-213AA) Package Maximum Ratings Ratings Symbol 2N6300 2N6301 Units Collector - Emitter Voltage VCEO 60 80 Vdc Collector - Base Voltage VCBO 60 80 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Base Current IB 120 mAdc Collector Current IC 8.0 Adc Tot
8.2. Size:131K inchange semiconductor
2n6300 2n6301.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6300 2N6301 DESCRIPTION With TO-66 package DARLINGTON Low collector saturation voltage Complement to type 2N6298/6299 APPLICATIONS General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (T
9.1. Size:62K central
2n6306 2n6307 2n6308.pdf 
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
9.3. Size:278K no
2n6306 2n6308.pdf 
The documentation and process conversion INCH-POUND measures necessary to comply with this revision shall MIL-PRF-19500/498E be completed by 12 August 20005. 12 May 2005 SUPERSEDING MIL-PRF-19500/498D 30 April 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6306, 2N6306T1, 2N6306T3, 2N6308, 2N6308T1, 2N6308T3, JAN, J
9.4. Size:11K semelab
2n6302.pdf 
2N6302 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 120V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 16A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
9.5. Size:54K microsemi
2n6306 2n6308.pdf 
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498 Devices Qualified Level JAN 2N6306 2N6308 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6306 2N6308 Units Collector-Emitter Voltage 250 350 Vdc VCEO Collector-Base Voltage 500 700 Vdc VCBO Emitter-Base Voltage 8.0 Vdc VEBO Collector Current 8.0 Adc IC Base Current 4.0 Adc IB Total P
9.6. Size:56K microsemi
2n6303.pdf 
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE (561) 842-0305 FAX (561) 845-7813 2N6303 APPLICATIONS High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES Silicon PNP Power Collector-Emitter Sustaining Voltage VCEO(sus) = - 80 Vdc (Min) Transistors DC Current Gain hFE = 30-150 @ IC = 1.5 Adc Low Collector-
9.7. Size:86K microsemi
2n6304.pdf 
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE (215) 631-9840 FAX (215) 631-9855 2N6304 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz High FT - 1.4 GHz (min) @ IC = 10 mAdc 2 1. Emitter 2. Base 1 3 Maximum Available Gain = 14 dB (min) @ f
9.8. Size:128K inchange semiconductor
2n6307.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6307 DESCRIPTION With TO-3 package High breakdown voltage High power dissipation APPLICATIONS Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplif
9.9. Size:128K inchange semiconductor
2n6308.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6308 DESCRIPTION With TO-3 package High breakdown voltage High power dissipation APPLICATIONS Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplif
9.10. Size:130K inchange semiconductor
2n6302.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6302 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain @IC=8A APPLICATIONS Designed for use in high power audio amplifier applications and high voltage switching regulator circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified
9.11. Size:128K inchange semiconductor
2n6306.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6306 DESCRIPTION With TO-3 package High breakdown voltage High power dissipation APPLICATIONS Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplif
Другие транзисторы: 2N6284G, 2N6286G, 2N6287G, 2N6288G, 2N6292G, 2N6299SMD, 2N6299SMD05, 2N6301SMD, 2N2222, 2B3440CSM4R, 2PA1576, 2PA1774, 2PA1774M, 2PA1774QM, 2PA1774RM, 2PA1774SM, 2PB1424
