Биполярный транзистор 2PD601ART - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2PD601ART
Маркировка: C3_C3p_C3t_C3W
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 3 pf
Статический коэффициент передачи тока (hfe): 210
Корпус транзистора: SOT23
Аналоги (замена) для 2PD601ART
2PD601ART Datasheet (PDF)
2pd601art.pdf
2PD601ART50 V, 100 mA NPN general-purpose transistorRev. 01 15 March 2007 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.PNP complement: 2PB709ART.1.2 Features General-purpose transistor Small SMD plastic package1.3 Applications General-purpose switching
2pd601art.pdf
2PD601ART50 V, 100 mA NPN general-purpose transistorRev. 01 15 March 2007 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.PNP complement: 2PB709ART.1.2 Features General-purpose transistor Small SMD plastic package1.3 Applications General-purpose switching
2pd601arl-asl.pdf
2PD601ARL; 2PD601ASL50 V, 100 mA NPN general-purpose transistorsRev. 01 6 November 2008 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-MountedDevice (SMD) plastic package.Table 1. Product overviewType number[1] Package PNP complementNXP JEDEC2PD601ARL SOT23 TO-236AB 2PB709ARL2PD601ASL 2PB70
2pd601arl.pdf
2PD601ARL; 2PD601ASL50 V, 100 mA NPN general-purpose transistorsRev. 01 6 November 2008 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-MountedDevice (SMD) plastic package.Table 1. Product overviewType number[1] Package PNP complementNXP JEDEC2PD601ARL SOT23 TO-236AB 2PB709ARL2PD601ASL 2PB70
2pd601arl 2pd601asl 2pd601arl-dg 2pd601asl-dg.pdf
2PD601ARL; 2PD601ASL50 V, 100 mA NPN general-purpose transistorsRev. 01 6 November 2008 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-MountedDevice (SMD) plastic package.Table 1. Product overviewType number[1] Package PNP complementNexperia JEDEC2PD601ARL SOT23 TO-236AB 2PB709ARL2PD601ASL
2pd601aq 2pd601ar 2pd601as 2pd601aqw 2pd601arw 2pd601asw.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
2pd601axl 2pd601axl 2pd601arl.pdf
2PD601ARL; 2PD601ASL50 V, 100 mA NPN general-purpose transistorsRev. 01 6 November 2008 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-MountedDevice (SMD) plastic package.Table 1. Product overviewType number[1] Package PNP complementNXP JEDEC2PD601ARL SOT23 TO-236AB 2PB709ARL2PD601ASL 2PB70
2pd601ar 2pd601ar 2pd601as.pdf
DISCRETE SEMICONDUCTORS DATA SHEET2PD601A seriesNPN general purpose transistors; 50 V, 100 mAProduct data sheet 2004 Feb 12Supersedes data of 2002 Jun 26NXP Semiconductors Product data sheetNPN general purpose transistors; 50 V, 2PD601A series100 mAFEATURES QUICK REFERENCE DATA Available in SOT323 (SC-70) and SOT346 (SC-59) SYMBOL PARAMETER MIN. MAX. UNITpackage
2pd601aqw 2pd601arw 2pd601asw.pdf
SMD Type TransistorsNPN General Purpose Transistor2PD601AWFeaturesHigh collector current (max. 100 mA)Low collector-emitter saturation voltage (max. 500 mV).1 Emitter2 Base3 CollectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base voltage VEBO 6VCollector current IC 100 mAPe
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N865A
History: 2N865A
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050