Биполярный транзистор 50C02MH-TL-E
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 50C02MH-TL-E
Маркировка: CM
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.6
W
Макcимально допустимое напряжение коллектор-база (Ucb): 60
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 0.5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 500
MHz
Ёмкость коллекторного перехода (Cc): 2.8
pf
Статический коэффициент передачи тока (hfe): 300
Корпус транзистора:
SOT-323
Аналоги (замена) для 50C02MH-TL-E
50C02MH-TL-E
Datasheet (PDF)
7.1. Size:51K sanyo
50c02mh.pdf 
Ordering number : ENN751650C02MHNPN Epitaxial Planar Silicon Transistor50C02MHLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifer, high-speed switching,unit : mmsmall motor drive, muting circuit.2194A[50C02MH]Features0.30.15 Large current capacitance.3 Low collector-to-emitter saturation voltage (r
7.2. Size:279K onsemi
50c02mh.pdf 
Ordering number : EN7516A50C02MHBipolar Transistorhttp://onsemi.com( )50V, 0.5A, Low VCE sat NPN Single MCPH3Applications Low-frequency Amplifer, high-speed switching small motor drive, muting circuitFeatures Large current capacity Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=175m [IC=0.5A, IB=50mA] Ultrasmall package facilitates
9.1. Size:51K sanyo
50c02ch.pdf 
Ordering number : ENN751550C02CHNPN Epitaxial Planar Silicon Transistor50C02CHLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifer, high-speed switching,unit : mmsmall motor drive, muting circuit.2150A[50C02CH]Features Large current capacitance.2.90.150.4 Low collector-to-emitter saturation voltage
9.2. Size:32K sanyo
50c02ss.pdf 
Ordering number : ENN751950C02SSNPN Epitaxial Planar Silicon Transistor50C02SSLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifer, high-speed switching,unit : mmsmall motor drive, muting circuit.2159A[50C02SS]FeaturesTop View Side View Large current capacitance.1.4 Low collector-to-emitter saturation
9.3. Size:302K onsemi
50c02ch.pdf 
50C02CH Bipolar Transistor 50V, 0.5A, Low VCE(sat), NPN Single www.onsemi.com Features Large Current Capacitance Low Collector to Emitter Saturation Voltage (Resistance): RCE(sat) typ=175m [IC=0.5A, IB=50mA] ELECTRICAL CONNECTION Ultrasmall Package Facilitates Miniaturization in End Products Small ON-Resistance (Ron) 31: Base1 2 : EmitterTypical Appl
9.4. Size:415K onsemi
50c02ss.pdf 
Ordering number : EN7519A50C02SSBipolar Transistorhttp://onsemi.com( )50V, 0.4A, Low VCE sat NPN Single SSFPApplications Low-frequency Amplifer, high-speed switching small motor drive, muting circuitFeatures Large current capacity Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=175m [IC=0.5A, IB=50mA] Ultrasmall package facilitates
9.5. Size:2733K blue-rocket-elect
brcs150c02ya.pdf 
BRCS150C02YA Rev.A Feb.-2023 DATA SHEET / Descriptions PDFN33-8L Complementary Enhancement MOSFET in a PDFN33-8L Plastic Package. / Features N-channel P-channel VDS(V)=20V VDS(V)=-20V ID=28A ID=-25A RDS(ON)
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