BC817K-16 datasheet, аналоги, основные параметры
Наименование производителя: BC817K-16
Маркировка: 6As
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 170 MHz
Ёмкость коллекторного перехода (Cc): 3 pf
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: SOT23
Аналоги (замена) для BC817K-16
- подборⓘ биполярного транзистора по параметрам
BC817K-16 даташит
bc817k-16 bc817k-25 bc817k-40.pdf
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BC817K.../BC818K... NPN Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BC817K-16 6As 1 = B 2 = E 3 = C - - - SOT23 BC817K-16W 6As 1 = B 2 = E 3 = C - - - SOT323 BC817K-25 6Bs
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BC817K.../BC818K... NPN Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BC817K-16 6As 1 = B 2 = E 3 = C - - - SOT23 BC817K-16W 6As 1 = B 2 = E 3 = C - - - SOT323 BC817K-25 6Bs
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bc817-16.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC817 16LT1/D BC817-16LT1 General Purpose Transistors NPN Silicon BC817-25LT1 COLLECTOR 3 BC817-40LT1 2 BASE 1 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 45 V Collector Base Voltage VCBO 50 V CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Emitter Base Voltage VEBO
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bc817.pdf
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bc817ds.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 BC817DS NPN general purpose double transistor Product data sheet 2002 Nov 22 Supersedes data of 2002 Aug 09 NXP Semiconductors Product data sheet NPN general purpose double transistor BC817DS FEATURES QUICK REFERENCE DATA High current (500 mA) SYMBOL PARAMETER MAX. UNIT 600 mW total power dissipation VCEO colle
bc817qa.pdf
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
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bc817-16w.pdf
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bc817-16-25-40.pdf
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bc817-16w-25w-40w.pdf
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bc817upn.pdf
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bc817u.pdf
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bc817dpn.pdf
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sbc817-25lt3g.pdf
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ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
bc817.pdf
UNISONIC TECHNOLOGIES CO., LTD BC817 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A. ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 BC817G-xx-AE3-R SOT-23 E B C Tape Reel BC817G-xx-AL3-R SOT-323 E B C T
bc817.pdf
BC817 NPN Silicon Transistor Descriptions PIN Connection High current application Switching application 3 Features 1 Suitable for AF-Driver stage and low power 2 output stages SOT-23 Complementary pair with BC807 Ordering Information Type NO. Marking Package Code NA BC817 SOT-23 Device Code hFE Rank Year&Wee
bc817f.pdf
BC817F NPN Silicon Transistor Descriptions PIN Connection High current application Switching application 3 Features 1 Suitable for AF-Driver stage and low power output stages 2 SOT-23F Complementary pair with BC807F Ordering Information Type NO. Marking Package Code NA BC817F SOT-23F Device Code hFE Rank Year&Week Code
bc817.pdf
BC817 -16, -25, -40 500 mA, 50 V NPN Plastic Encapsulate Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES For general AF applications A Collector L 3 High collector current 3 3 High current gain Top View C B Low collector-emitter saturation voltage 1 1 1 2 Complementary ty
bc817w.pdf
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bc817 bc818.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N P N transistors Marking PACKAGE OUTLINE DETAILS BC817 = 6D ALL DIMENSIONS IN mm BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E BC818-25 = 6F BC818-40 = 6G Pin configuration 1 = BASE 2 =
bc817.pdf
TRANSISTOR (NPN) 1. BASE 2. EMITTER For general AF applications 3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) a
bc817w.pdf
JIANGSUCHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors BC817W TRANSISTOR (NPN) SOT-323 FEATURES For General AF Applications High Collector Current High Current Gain Low Collector-Emitter Saturation Voltage 1. BASE 2. EMITTER 3. COLLECTOR MAXMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Uni
bc817.pdf
SEMICONDUCTOR BC817 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Complementary to BC807. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05 K 0.00 0.10 CHARACTERISTIC SYMBOL RATING UNIT L 0.5
bc817w.pdf
SEMICONDUCTOR BC817W TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M B M Complementary to BC807W. DIM MILLIMETERS _ + A 2.00 0.20 D 2 _ B 1.25 + 0.15 _ + C 0.90 0.10 3 1 D 0.3+0.10/-0.05 _ E 2.10 + 0.20 MAXIMUM RATING (Ta=25 ) G 0.65 H 0.15+0.1/-0.06 CHARACTERISTIC SYMBOL RATING UNIT J 1.30 K 0.00 0.10 V
bc817a.pdf
SEMICONDUCTOR BC817A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Complementary to BC807A. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05 K 0.00 0.10 CHARACTERISTIC SYMBOL RATING UNIT L 0
bc817.pdf
BC817 TRANSISTOR (NPN) BC817-16 BC817-25 BC817-40 SOT-23 FEATURES 1. BASE For general AF applications 2. EMITTER High collector current 3. COLLECTOR High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V
bc817-16 bc817-25 bc817-40.pdf
BC8 1 7 TRANSISTOR (NPN) BC817-16 BC817-25 BC817-40 SOT-23 FEATURES 1. BASE For general AF applications 2. EMITTER High collector current 3. COLLECTOR High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50
bc817.pdf
BC817-16 BC817-25 BC817-40 SOT-23 Transistor(NPN) 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V Dimen
bc817-16 bc817-25 bc817-40.pdf
BC817-16/-25/-40 NPN General Purpose Amplifier FEATURES 1. BASE For general AF application. A SOT-23 2. EMITTER Dim Min Max Complementary PNP type available 3. COLLECTOR A 2.70 3.10 E BC807. B 1.10 1.50 K B High collector current, high current gain. C 1.0 Typical D 0.4 Typical Low collector-emitter saturation voltage. E 0.35 0.48 J D G 1.80 2.00 ORDERING
bc817-16-25-40.pdf
BC817-16/BC817-25 BC817-40 COLLECTOR 3 General Purpose Transistor 3 NPN Silicon 1 1 BASE 2 SOT-23 2 EMITTER ( T =25 C unless otherwise noted) M aximum R atings A Rating Symbol Unit Value V CEO 45 Collector-Emitter Voltage Vdc VCBO Vdc Collector-Base Voltage 50 VEBO Vdc 5.0 Emitter-Base Voltage mAdc Collector Current-Continuous IC 500 Thermal Characteristics Chara
bc817-40wt1.pdf
FM120-M WILLAS THRU BC817-40WT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize
bc817-xxlt1.pdf
WILLAS BC817-xxLT1 General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" MAXIMUM RATINGS SOT 23 Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 V Collector Base Voltage V CBO 50 V Emitter Base Voltage V E
bc817n3.pdf
Spec. No. C906N3 Issued Date 2003.05.12 CYStech Electronics Corp. Revised Date Page No. 1/4 General Purpose NPN Epitaxial Planar Transistor BC817N3 Description The BC817N3 is designed for general purpose switching and amplification applications. Complementary to BC807N3. Features High current (max. 500mA) Low voltage (max 45V). Symbol Outline BC81
bc817.pdf
BC817 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features I BC807 C High IC ,complementary pair with BC807. / Applications Purpose General power amplifier and switching application.
bc817-25 bc817-40.pdf
BC817-25 BC817-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Type Marking BC817-25 6B BC817-40 6C SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPES ARE BC807-25 AND BC817-40 RESPECTIVELY SOT-23 APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH
bc817-16 bc817-25 bc817-40 bc818-16 bc818-25 bc818-40.pdf
BC817 / BC818 NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier application, These transistors are subdivided into three groups -16, -25, -40 according to their current gain. As complementary types, the PNP transistors BC807 and BC808 are recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collec
lbc817-40dmt1g.pdf
LESHAN RADIO COMPANY, LTD. LBC817-16DMT1G LBC817-25DMT1G Dual General Purpose Transistors LBC817-40DMT1G NPN Duals S-LBC817-16DMT1G We declare that the material of product compliance with RoHS requirements. S-LBC817-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-40DM
lbc817-16dpmt1g lbc817-25dpmt1g lbc817-40dpmt1g.pdf
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC817-16DPMT1G LBC817-25DPMT1G NPN/PNP Duals LBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements. S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-25DPMT1G S-LBC
lbc817-16dmt1g.pdf
LESHAN RADIO COMPANY, LTD. LBC817-16DMT1G LBC817-25DMT1G Dual General Purpose Transistors LBC817-40DMT1G NPN Duals S-LBC817-16DMT1G We declare that the material of product compliance with RoHS requirements. S-LBC817-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-40DMT
lbc817-25dpmt1g.pdf
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC817-16DPMT1G LBC817-25DPMT1G NPN/PNP Duals LBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements. S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-25DPMT1G S-LBC
lbc817-16dpmt1g lbc817-25dpmt1g lbc817-40dpmt1g lbc817-16dpmt3g lbc817-25dpmt3g lbc817-40dpmt3g.pdf
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC817-16DPMT1G LBC817-25DPMT1G NPN/PNP Duals LBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements. S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-25DPMT1G S-LBC
lbc817-25wt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors We declare that the material of product compliance with RoHS requirements. LBC817-25WT1G 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage V CEO 45 V Collector Base Voltage V CBO 50 V SC-70 Emitter Base Voltage V EBO 5.0 V Collector Current Continuous I C 500 mAdc THERMAL CHARACTERISTICS
lbc817-40wt1g lbc817-40wt3g.pdf
LBC817-40WT1G S-LBC817-40WT1G NPN Silicon General Purpose Transistors 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Devic
lbc817-40wt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. LBC817-40WT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-40WT1G 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector Emit
lbc817-16dpmt1g.pdf
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC817-16DPMT1G LBC817-25DPMT1G NPN/PNP Duals LBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements. S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-25DPMT1G S-LBC
lbc817-16lt1g lbc817-25lt1g lbc817-40lt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC817-16LT1G LBC817-25LT1G We declare that the material of product compliance with RoHS requirements. LBC817-40LT1G 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector Emitter Voltage V CEO 45 V 2 Collector Base Voltage V CBO 50 V SOT 23 Emitter Base Voltage V EBO 5.0 V Collector Current Contin
lbc817-25lt1g.pdf
LESHAN RADIO COMPANY, LTD. LBC817-16LT1G LBC817-25LT1G General Purpose Transistors LBC817-40LT1G NPN Silicon S-LBC817-16LT1G We declare that the material of product compliance with RoHS requirements. S-LBC817-25LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-40LT1G 3 MA
lbc817-25dmt1g.pdf
LESHAN RADIO COMPANY, LTD. LBC817-16DMT1G LBC817-25DMT1G Dual General Purpose Transistors LBC817-40DMT1G NPN Duals S-LBC817-16DMT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-LBC817-25DMT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-40DMT
lbc817-40lt1g.pdf
LESHAN RADIO COMPANY, LTD. LBC817-16LT1G LBC817-25LT1G General Purpose Transistors LBC817-40LT1G NPN Silicon S-LBC817-16LT1G S-LBC817-25LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and S-LBC817-40LT1G Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 MA
lbc817-40dpmt1g.pdf
LESHAN RADIO COMPANY, LTD. LBC817-16DPMT1G LBC817-25DPMT1G Dual General Purpose Transistors LBC817-40DPMT1G NPN/PNP Duals S-LBC817-16DPMT1G We declare that the material of product compliance with RoHS requirements. S-LBC817-25DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC
lbc817-16lt1g.pdf
LESHAN RADIO COMPANY, LTD. LBC817-16LT1G General Purpose Transistors LBC817-25LT1G LBC817-40LT1G NPN Silicon S-LBC817-16LT1G S-LBC817-25LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-LBC817-40LT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 MAX
lbc817-16wt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors We declare that the material of product compliance with RoHS requirements. LBC817-16WT1G S- Prefix for Automotive and Other Applications Requiring Unique Site S-LBC817-16WT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage V
bc817-16lg.pdf
BC817 SERIES General Purpose Transistors BC817-16/25/40LG BC817-16LG, BC817-25LG,BC817-40LG SERIES Features 3 Pb-Free Packages are Available 1 2 Maximum Ratings Rating Symbol Value Unit SOT-23 Collector-Emitter Voltage VCEO 45 V Collector-Base Voltage VCBO 50 V COLLECTOR Emitter-Base Voltage VEBO 5.0 V 3 Collector Current - Continuous IC 500 mAdc 1 BASE 2 EMITTER Devi
bc817-25lg bc817-40lg.pdf
BC817 SERIES General Purpose Transistors BC817-16/25/40LG BC817-16LG, BC817-25LG,BC817-40LG SERIES Features 3 Pb-Free Packages are Available 1 2 Maximum Ratings Rating Symbol Value Unit SOT-23 Collector-Emitter Voltage VCEO 45 V Collector-Base Voltage VCBO 50 V COLLECTOR Emitter-Base Voltage VEBO 5.0 V 3 Collector Current - Continuous IC 500 mAdc 1 BASE 2 EMITTER Devi
bc817s.pdf
SEMICONDUCTOR BC817S TECHNICAL DATA General Purpose Transistors MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 V Collector Base Voltage V CBO 50 V 3 Emitter Base Voltage V EBO 5.0 V 2 Collector Current Continuous I C 500 mAdc 1 SOT 23 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR 5 Board, (1) P D 3
bc817.pdf
SMD Type Transistors NPN Transistors BC817 (KC817) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features For general AF applications Low collector-emitter saturation voltage 1 2 Complementary types BC807 (PNP) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit
bc817w.pdf
SMD Type Transistors NPN Transistors BC817W (KC817W) Features For General AF Applications High Collector Current High Current Gain Low Collector-Emitter Saturation Voltage Complementary to BC807W 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Volt
bc817a.pdf
SMD Type Transistors NPN Transistors BC817A (KC817A) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features For general AF applications. High collector current. 1 2 High current gain. +0.1 +0.05 0.95 -0.1 0.1 -0.01 Low collector-emitter saturation voltage. +0.1 1.9 -0.1 Complementary PNP type available(BC807A) 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta
bc817-16 bc817-25 bc817-40.pdf
BC817 SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 45 Volt POWER 330 mW FEATURES General purpose amplifier applications 0.120(3.04) NPN epitaxial silicon, planar design 0.110(2.80) Collector current IC = 500mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free) 0.056(1.40) 0.047(1.20) MECHANICA
bc817-16-au bc817-25-au bc817-40-au.pdf
PBC817-16-AU / BC817-25-AU / BC817-40-AU Silicon NPN General Purpose Transistors SOT-23 Unit inch(mm) 45V 500mA Voltage Current Features Silicon NPN Epitaxial type Excellent DC current gain characteristics General purpose amplifier application AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 Stan
bc817-40-g bc817-25-g.pdf
General Purpose Transistors BC817-16-G/25-G/40-G (NPN) RoHS Device Features -For general AF applications. SOT-23 -High collector current. 0.119(3.00) -High current gain. 0.110(2.80) -Low collector-emitter saturation voltage. 3 0.056(1.40) Marking 0.047(1.20) BC817-16-G 6A 1 2 0.006(0.15) BC817-25-G 6B 0.083(2.10) 0.002(0.05) 0.066(1.70) BC817-40-G 6C 0.044(1.10)
bc817-16-g.pdf
General Purpose Transistors BC817-16-G/25-G/40-G (NPN) RoHS Device Features -For general AF applications. SOT-23 -High collector current. 0.119(3.00) -High current gain. 0.110(2.80) -Low collector-emitter saturation voltage. 3 0.056(1.40) Marking 0.047(1.20) BC817-16-G 6A 1 2 0.006(0.15) BC817-25-G 6B 0.083(2.10) 0.002(0.05) 0.066(1.70) BC817-40-G 6C 0.044(1.10)
kbc817-16 kbc817-25 kbc817-40c.pdf
KBC817 16/25/40C N P N S i l i c o n T r a n s i s t o r 2018.03.02 2018.03.02 2018.03.02 2018.03.02 1 000 2018.03.02 AUK Dalian 1 KBC817 16/25/40C NPN Silicon Transistor Descriptions
bc817-16 bc817-25 bc817-40.pdf
BC817 NPN Silicon Epitaxial Planar Transistors For general AF applications 1. BASE High collector current 2. EMITTER High current gain 3. COLLECTOR Low collector-emitter saturation voltage Complementary types BC807 (PNP) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 50
bc817-16 bc817-25 bc817-40.pdf
R UMW UMW BC817 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1. BASE 2. EMITTER For general AF applications 3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) a
bc817-16-25-40.pdf
RoHS BC817- 16/ - 25/ 40 BC817- 16/ - 25/ 40 NPN EPTTAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGANL TRANSISTORS o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Emitter Voltage VCEO 45 V V Emitter-Base Voltage VCBO 50 mA Collector Current Ic 1000 Peak Colteetor Current IcM mA 1000 Peak Fmitter Current IEM mA 800 o PD Power Dissipation
bc817-16 bc817-25 bc817-40.pdf
BC817-16/-25/-40 NPN Transistor Features SOT-23 For switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the PNP transistors BC817 are recommended 1 Base 2. Emitter 3. Collector Absolute Maximum Ratings (TA=25 , unless otherwisenoted) Parameter Symbol Valu
bc817-16 bc817-25 bc817-40.pdf
BC817-40 BC817-16 BC817-25 SOT-23 NPN Plastic-Encapsulate Transistors FEATURES For general AF applications High collector current T-23 SO High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-B
bc817-16 bc817-25 bc817-40.pdf
HD ST0.3 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V C V Collector-Emitter Voltage 45 V CEO V Emitter
bc817-16 bc817-25 bc817-40.pdf
BC817 SOT-23 Plastic-Encapsulate Transistor SOT-23 BC817- 16 TRANSISTOR (NPN) BC817- 25 BC817- 40 FEATURES 1. BASE For general AF applications 2. EMITTER High collector current 3. COLLECTOR High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) PACKAGE SPECIFICATIONS Box Size QTY/Box Reel DIA. Q'TY/Reel Carton S
bc817-16 bc817-25 bc817-40.pdf
www.msksemi.com BC817-16/25/40 Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) 1. BASE 2. EMITTER For general AF applications 3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) hFE
bc817-16 bc817-25 bc817-40.pdf
Jingdao Microelectronics co.LTD BC817 BC817 SOT-23 NPN TRANSISTOR 3 FEATURES For general AF applications High collector current High current gain 1 Low collector-emitter saturation voltage Complementary types BC807 (PNP) 2 1.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.EMITTER 3.COLLECTOR Sy
bc817.pdf
BC817 TRANSISTOR (NPN) REV.08 1 of 3 BC817 REV.08 2 of 3 BC817 PACKAGE OUTLINE Plastic surface mounted package; 3 leads Plastic surface mounted package; 3 leads SOT-23 REV.08 3 of 3
bc817-16 bc817-25 bc817-40.pdf
BC817 Series TRANSISTOR (NPN) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 50 V Co
bc817-16 bc817-25 bc817-40.pdf
BC817 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features BC807 ; Complementary to BC807 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package
bc817-16 bc817-25 bc817-40.pdf
BC817 BC817 BC817 BC817 BC8 17 TRANSISTOR(NPN) FEATURE For general AF applications SOT-23 High collector current High current gain 1 BASE Low collector-emitter saturation voltage 2 EMITTER Complementary types BC807 (PNP) 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
bc817-16 bc817-25 bc817-40.pdf
RoHS COMPLIANT BC817-16 THRU BC817-40 NPN General Purpose Amplifier Features Capable of 0.3Watts(TA=25 ) of Power Dissipation Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Device Marking BC817-16 6A BC817-25 6B BC817-40 6C Maximum Rating Item Symbol Unit Va
bc817-16w bc817-25w bc817-40w.pdf
RoHS COMPLIANT BC817-16W THRU BC817-40W NPN General Purpose Amplifier Features Capable of 0.2Watts(TA=25 ) of Power Dissipation Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Device Marking BC817-16W 6A BC817-25W 6B BC817-40W 6C Maximum Ratings (Ta=25 Unless
bc817-16q bc817-25q bc817-40q.pdf
RoHS RoHS COMPLIANT COMPLIANT BC817-16Q THRU BC817-40Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Mechanical Data SOT-23 Case Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking
bc817-16 bc817-25 bc817-40.pdf
BC817 TRANSISTOR (NPN) 1. BASE 2. EMITTER For general AF applications 3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) a Collector-Base Voltage 50 V Collec
bc817.pdf
BC817 BC817 SOT-23 Plastic-Encapsulate Transistors (NPN) General description SOT-23 Plastic-Encapsulate Transistors (NPN) FEATURES Complementary to BC807 Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any DEVICE MARKING CODE Maximum Ratings & Thermal Charact
bc817-16 bc817-25 bc817-40.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD BC817 FEATURES NPN Low Frequency AmplifierTransistor MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage V 45 V CEO Collector-Base Voltage V 50 V CBO - Emitter-
bc817-16 bc817-25 bc817-40.pdf
BC817 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to BC807 High Collector Current Low Collector-emitter saturation voltage High current gain Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless o
bc817-16 bc817-25 bc817-40.pdf
Features Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications A Complementary Types Available (BC ) SOT-23 C Dim Min Max A 0.37 0.51 B C B 1.20 1.40 TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H Maximum
Другие транзисторы: BC817-25QA, BC817-40-G, BC817-40LG, BC817-40LT1G, BC817-40LT3G, BC817-40QA, BC817-40WT1G, BC817DS, 2N2222, BC817K-16W, BC818-40LT1G, BC818K-16, BC818K-25, BC818LT1, BC818W, BC846_SER, BC846A-G
History: NPS3710 | NB222EH
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