BC846BS. Аналоги и основные параметры
Наименование производителя: BC846BS
Маркировка: E5
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 65 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 1.9 pf
Статический коэффициент передачи тока (hFE): 200
Корпус транзистора: SOT363
Аналоги (замена) для BC846BS
- подборⓘ биполярного транзистора по параметрам
BC846BS даташит
bc846bs.pdf
BC846BS 65 V, 100 mA NPN/NPN general-purpose transistor Rev. 01 24 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP complement complement NXP JEITA BC846BS SOT363 SC-88 BC856BS BC846BPN 1.2 Fe
bc846s bc846bs.pdf
BC846S/BC846BS Features For Switching and AF Amplifier Applications Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Dual NPN Epoxy Meets UL 94 V-0 Flammability Rating Small Signal Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Transistors Maximum Ratings @ 25 C Unless Ot
bc846bs.pdf
RoHS COMPLIANT BC846BS Dual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage SOT-363 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking 4Ft Equivalent circuit 1 / 5 S-S2968 Yangzhou
bc846bpn.pdf
BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor Rev. 01 17 July 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP JEITA BC846BPN SOT363 SC-88 BC846BS BC856BS 1.2 Fea
bc846bmb.pdf
BC846BMB 65 V, 100 mA NPN general-purpose transistor Rev. 1 15 May 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits Leadless ultra small SMD plastic package Low package height of 0.37 mm Power dissipati
bc846w bc846aw bc846bw.pdf
BC846xW series 65 V, 500 mA NPN general-purpose transistors Rev. 10 27 January 2022 Product data sheet 1. General description NPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement Nexperia JEDEC BC846W SOT323 SC-70 BC856W BC846AW BC856AW BC846BW BC856BW 2. Features
bc846bm.pdf
BC846BM 65 V, 100 mA NPN general-purpose transistor 20 August 2015 Product data sheet 1. General description NPN general-purpose transistor in a leadless ultra small DFN1006-3 (SOT883) Surface- Mounted Device (SMD) plastic package. PNP complement BC856BM. 2. Features and benefits Leadless ultra small SMD plastic package Power dissipation comparable to SOT23 AEC-Q101 quali
bc846bpn.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bc846 bc846a bc846b bc846w bc846aw bc846bw bc846t bc846at bc846bt.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bc846bwr bc847awr.pdf
BC846W SERIES BC847W SERIES www.centralsemi.com SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE SEE MARKING CODE
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
BC846A-BC848C NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case SOT23 Complementary PNP Types BC856 BC858 Case material molded plastic, Green molding compound For switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS compliant (Note
bc846blp4.pdf
BC846BLP4 65V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Low Collector-Emitter Saturation Voltage, VCE(SAT) Case X2-DFN1006-3 Case Material Molded Plastic, "Green" Molding Compound. Ultra-Small Leadless Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) Moisture
bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw.pdf
BC846AW - BC848CW NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features Ideally Suited for Automatic Insertion SOT-323 Complementary PNP Types Available A (BC856W-BC858W) Dim Min Max C A For Switching and AF Amplifier Applications 0.25 0.40 B 1.15 1.35 Mechanical Data B C C 2.00 2.20 Case SOT-323, Molded Plastic D 0.65 Nominal B E Case material - UL Flammability Rating
bc846a bc846b bc846bw bc847a bc847b bc847bf bc847bl3 bc847bt bc847bw bc847c bc847cw bc848a bc848aw bc848b bc848bf bc848bl3 bc848bw bc848c bc848cw bc849b bc849bf bc849c bc849cw bc850b bf850bf bc850bw bc850c.pdf
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c bc849b bc849c.pdf
M C C TM Micro Commercial Components BC846A thru BC849C Static Characteristic h I FE C 10 3000 COMMON COMMON EMITTER EMITTER V CE= 5V T a =25 1000 8 T =100 a 20uA 18uA 6 16uA T =25 14uA a 12uA 4 100 10uA 8uA 6uA 2 4uA I B=2uA 0 10 0 1 2 3 4 5 6 7 1 10 100 COLLECTOR CURRENT IC (mA) COLLECTOR EMITTER VOLTAGE V CE (V) V I
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdf
BC846ALT1G Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model >4000 V ESD Rating - Machine Model >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 These Devices are Pb-
bc846bdw1t1g bc847bdw1t1g bc847cdw1t1g bc848cdw1t1g.pdf
DATA SHEET www.onsemi.com Dual General Purpose Transistors SOT-363/SC-88 CASE 419B NPN Duals STYLE 1 BC846BDW1, BC847BDW1, (3) (2) (1) BC848CDW1 These transistors are designed for general purpose amplifier Q1 Q2 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (4) (5) (6) Features S and NSV Prefixes for Automotiv
bc846alt1g bc846blt1g bc847alt1g bc847blt1g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g bc850clt1g.pdf
BC846ALT1G Series General Purpose Transistors NPN Silicon Features www.onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model > 4000 V ESD Rating - Machine Model > 400 V COLLECTOR 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Device
sbc846bpdw1t1g.pdf
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap
bc846alt1g bc846blt1g bc846clt1g bc847alt1g bc847blt1g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g bc850clt1g.pdf
General Purpose Transistors NPN Silicon BC846ALT1G Series Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model > 4000 V ESD Rating - Machine Model > 400 V COLLECTOR S and NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Device
nsvbc846bm3t5g.pdf
BC846BM3T5G, NSVBC846BM3T5G General Purpose Transistor NPN Silicon Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model >4000 V Machine Model >400 V COLLECTOR NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE This is a Pb-Free Device 2 EMI
sbc846bdw1t1g.pdf
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G http //onsemi.com Dual General Purpose Transistors SOT-363 CASE 419B NPN Duals STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applications. Features Q1 Q
sbc846alt1g sbc846blt1g sbc846blt3g sbc847clt1g sbc848blt1g.pdf
BC846ALT1G Series, SBC846ALT1G Series General Purpose Transistors NPN Silicon Features http //onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model >4000 V COLLECTOR ESD Rating - Machine Model >400 V 3 AEC-Q101 Qualified and PPAP Capable 1 S Prefix for Automotive and Other Applications Requiring Unique BASE Site and Control Change Requirements
bc847bpdw1t2g bc846bpdw1t1g.pdf
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap
bc846bm3t5g nsvbc846bm3t5g.pdf
BC846BM3T5G, NSVBC846BM3T5G General Purpose Transistor NPN Silicon Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model >4000 V Machine Model >400 V COLLECTOR NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE This is a Pb-Free Device 2 EMI
bc846bpdw1t1g bc847bpdw1t1g bc848cpdw1t1g.pdf
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors www.onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Appli
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g nsvbc849blt1g bc849clt1g bc849clt3g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdf
BC846ALT1G Series General Purpose Transistors NPN Silicon Features www.onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model > 4000 V ESD Rating - Machine Model > 400 V COLLECTOR 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Device
bc846bwt1g bc847awt1g bc847bwt1g bc847cwt1g bc848bwt1g bc848cwt1g.pdf
BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR Features 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC
bc846bm3-d.pdf
BC846BM3T5G General Purpose Transistor NPN Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V Machine Model >400 V http //onsemi.com This is a Pb-Free Device COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 65 Vdc 2 Collector-Base Voltage VCBO 80 Vdc EMITTER Emitter-Base Voltage VEBO 6.0 Vdc Collec
bc846amtf bc846bmtf bc846cmtf bc847amtf bc847bmtf bc847cmtf bc848bmtf bc848cmtf bc850amtf bc850cmtf.pdf
BC846 / BC847 / BC848 / BC850 NPN Epitaxial Silicon Transistor Features 3 Switching and Amplifier Applications Suitable for Automatic Insertion in Thick and Thin-film Circuits Low Noise BC850 2 Complement to BC856, BC857, BC858, BC859, and BC860 SOT-23 1 1. Base 2. Emitter 3. Collector Ordering Information(1) Part Number Marking Package Packing Method BC846AMTF 8A
bc846bm3.pdf
BC846BM3T5G, NSVBC846BM3T5G General Purpose Transistor NPN Silicon Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model >4000 V Machine Model >400 V COLLECTOR NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE This is a Pb-Free Device 2 EMI
bc846alt3g bc846blt3g.pdf
BC846ALT1G Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model >4000 V ESD Rating - Machine Model >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 These Devices are Pb-
bc847alt1g bc846blt1g.pdf
BC846ALT1G Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model >4000 V ESD Rating - Machine Model >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 These Devices are Pb-
bc846bwt1g bc847bwt1g.pdf
BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon http //onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC-70/SOT-323 which is COLLECTOR designed for low power surface mount applications. 3 Features 1 Pb-Free Packages are Available BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol Value Unit SC-7
bc848cpdw1t1g bc846bpdw1t1g bc847bpdw1t1g.pdf
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors www.onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Appli
bc847bdw1t3g bc846bdw1t1g.pdf
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G http //onsemi.com Dual General Purpose Transistors SOT-363 CASE 419B NPN Duals STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applications. Features Q1 Q
bc846bdw1 bc847bdw1 bc848cdw1.pdf
Dual General Purpose Transistors NPN Duals BC846BDW1, BC847BDW1, BC848CDW1 www.onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Features SOT-363/SC-88 S and NSV Prefixes for Automotive and Other Applications CASE 419B STYLE 1 Requiring Unique Si
bc846bdw1t1g bc847bdw1t1g bc848cdw1t1g.pdf
BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G Dual General Purpose Transistors http //onsemi.com NPN Duals (3) (2) (1) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Q1 Q2 Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS (4) (5) (6) Com
bc846bpdw1 bc847bpdw1 bc848cpdw1.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
sbc846bwt1g.pdf
BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR Features 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf
BC846A/B, BC847A/B/C, BC848A/B/C Taiwan Semiconductor Small Signal Product 200mW, NPN Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) under plate - Pb free and RoHS compliant - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halo
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
BC847 BC846A, B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848 VCEO Collector-Emitter Vo
bc846bdw bc847 bc848.pdf
BC846BDW Series General Purpose Transistor 2 1 3 6 5 4 NPN Duals 1 2 P b Lead(Pb)-Free 3 4 5 6 SOT-363(SC-88) NPN+NPN Maximum Ratings BC846 BC847 Rating Symbol BC848 Unit 65 45 Collector-Emitter Voltage V 30 CEO Vdc 80 50 Collector-Base Voltage VCBO 30 Vdc 6.0 Emitter-Base Voltage VEBO 6.0 5.0 Vdc Collector Current-Continuous IC 100 100 100 mAdc Thermal Characteri
bc846bpdw bc847 bc848.pdf
BC846BPDW Series NPN/PNP Dual General Purpose Transistors 2 1 3 P b Lead(Pb)-Free 6 5 4 1 2 3 4 5 6 NPN+PNP SOT-363(SC-88) MAXIMUM RATINGS - NPN Rating Symbol BC846 BC847 BC848 Unit Collector-Emitter Voltage VCEO 65 45 30 V Collector-Base Voltage VCBO 80 50 30 V Emitter-Base Voltage VEBO 6.0 6.0 5.0 V Collector Current - Continuous IC 100 100 100 mAdc MAXIMUM RATINGS - PNP
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf
BC846 BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage BC846 VCBO 80 V BC847, BC850 VCBO 50 V BC848, BC849 VCBO 30 V Collector Emitter Voltage BC846 VCEO 65 V BC847, BC850 VCEO 45 V BC848, BC849 VCEO 30 V Emitter Base Voltage BC
lbc846bdw1t1g lbc846bdw1t3g lbc847bdw1t1g lbc847bdw1t3g lbc847cdw1t1g lbc847cdw1t3g lbc848bdw1t1g lbc848bdw1t3g lbc848cdw1t1g lbc848cdw1t3g lbc846adw1t1g lbc846adw1t3g.pdf
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848
lbc846bpdw1t1g lbc846bpdw1t3g lbc847bpdw1t1g lbc847bpdw1t3g lbc847cpdw1t1g lbc847cpdw1t3g lbc848bpdw1t1g lbc848bpdw1t3g lbc848cpdw1t1g lbc848cpdw1t3g.pdf
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi
lbc846bpdw1t1g.pdf
LESHAN RADIO COMPANY, LTD. LBC846BPDW1T1G Dual General Purpose Transistors LBC847BPDW1T1G LBC847CPDW1T1G NPN/PNP Duals (Complimentary) LBC848BPDW1T1G These transistors are designed for general purpose amplifier LBC848CPDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi
lbc846blt1g lbc846blt3g.pdf
LBC846BLT1G S-LBC846BLT1G General Purpose Transistors NPN Silicon 1. FEATURES SOT23(TO-236) Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V Machine Model >400 V We declare that the material of product compliance with RoHS requirements and Halogen Free. 3 COLLECTOR S- prefix for automotive and other applications requiring unique site
lbc846bwt1g.pdf
LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon CWT1G We declare that the material of product compliance with RoHS requirements. LBC848AWT1G,BWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATION Pb Free
lbc846awt1g lbc846bwt1g lbc847awt1g lbc847bwt1g lbc847cwt1g lbc848awt1g lbc848bwt1g lbc848cwt1g.pdf
LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon CWT1G We declare that the material of product compliance with RoHS requirements. LBC848AWT1G,BWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATIO
lbc846bpdw1t1g lbc847bpdw1t1g lbc847cpdw1t1g lbc848bpdw1t1g lbc848cpdw1t1g.pdf
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi
lbc846bdw1t1g.pdf
LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G Dual General Purpose Transistors LBC846BDW1T1G NPN Duals LBC847BDW1T1G These transistors are designed for general purpose amplifier LBC847CDW1T1G LBC848BDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CDW1T1G designed for low power surface mount applications. S-LBC846ADW1T1G We declare that the material of produc
lbc846alt1g lbc846blt1g lbc847alt1g lbc847blt1g lbc847clt1g lbc848alt1g lbc848blt1g lbc848clt1g lbc849blt1g lbc849clt1g lbc850blt1g lbc850clt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G ESD Rating Human Body Model >4000 V S-LBC846ALT1G ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chan
lbc846alt1g lbc846alt3g lbc846blt1g lbc846blt3g lbc847alt1g lbc847alt3g lbc847blt1g lbc847blt3g lbc847clt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G S-LBC846ALT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang
lbc846bdw1t1g lbc847bdw1t1g lbc847cdw1t1g lbc848bdw1t1g lbc848cdw1t1g lbc846adw1t1g.pdf
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848
lbc846alt1g lbc846alt3g lbc846blt1g lbc846blt3g lbc847alt1g lbc847alt3g lbc847blt1g lbc847blt3g lbc847clt1g lbc847clt3g lbc848alt1g lbc848alt3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G S-LBC846ALT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and Control C
lbc846blt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC846ALT1G NPN Silicon Series Moisture Sensitivity Level 1 S-LBC846ALT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and
bc846bpn.pdf
SMD Type Transistors Complementary NPN/PNP Transistors BC846BPN (KC846BPN) Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors 6 5 4 TR2 TR1 1 2 3 Absolute Maximum Ratings Ta = 25 Parameter Symbol NPN P
bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw bc849bw bc849cw bc850bw bc850cw.pdf
BC846AW BC850CW NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volt POWER VOLTAGE 250 mWatt FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard MECHANICAL DATA Case SOT-323, Plastic Terminals Solderable per
bc846a-au bc847a-au bc848a-au bc846b-au bc847b-au bc848b-au bc849b-au bc850b-au bc847c-au bc848c-au bc849c-au bc850c-au.pdf
BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volt POWER 330 mWatt FEATURES General purpose amplifier applications 0.120(3.04) 0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Acqire quality system certificate TS16949 AEC-Q101 qualified Lead free in compliance with EU RoHS 20
bc846aw-au bc847aw-au bc848aw-au bc846bw-au bc847bw-au bc848bw-au bc849bw-au bc850bw-au bc847cw-au bc848cw-au bc849cw-au bc850cw-au.pdf
BC846AW-AU BC850CW-AU NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volt POWER 250 mWatt VOLTAGE FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard MECHANICAL DATA Case SOT-323, Plastic
bc846a bc847a bc848a bc846b bc847b bc848b bc849b bc850b bc847c bc848c bc849c bc850c.pdf
BC846,BC847,BC848,BC849,BC850 SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volt POWER 330 mWatt FEATURES 0.120(3.04) General purpose amplifier applications 0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . 0.056(1.40) (Ha
bc846bpn.pdf
BC846BPN DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY) This device contains two electrically-isolated complimentary pair (NPN and PNP)general-purpose transistors. This device is ideal for portable applications where board space is at a premium. POWER 225 mWatt VOLTAGE 65 Volt FEATURES General purpose amplifier applications Collector current Ic = 100mA Lead free in
bc846b-g bc847c-g.pdf
Small Signal Transistor BC846A-G Thru. BC848C-G (NPN) RoHS Device Features -Power dissipation O PCM 0.20W (@TA=25 C) SOT-23 -Collector current ICM 0.1A -Collector-base voltage 0.118(3.00) 0.110(2.80) VCBO BC846=80V 3 BC847=50V 0.055(1.40) BC848=30V 0.047(1.20) -Operating and storage junction temperature 1 2 O range TJ, TSTG= -65 to +150 C 0.079(2.00) 0.071(1.80)
bc846bw-g bc846aw-g.pdf
Small Signal Transistor BC846AW-G Thru. BC848CW-G (NPN) RoHS Device Features -Power dissipation PCM 0.15W (@TA=25 C) SOT-323 -Collector current ICM 0.1A 0.087 (2.20) -Collector-base voltage 0.079 (2.00) VCBO BC846W=80V 3 BC847W=50V 0.053(1.35) BC848W=30V 0.045(1.15) -Operating and storage junction temperature 1 2 range TJ, TSTG= -55 to +150 C 0.006 (0.15) 0.055
dbc846bpdw1t1g dbc847bpdw1t1g dbc847cpdw1t1g dbc848bpdw1t1g dbc848cpdw1t1g.pdf
Dual General Purpose Transistors Dual General Purpose Transistors NPN/PNP Duals (Complimentary) DBC846BPDW1T1G DBC847BPDW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is DBC847CPDW1T1G designed for low power surface mount applications. DBC848BPDW1T1G We declare that the material of product compliance wit
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
R UMW UMW BC847 BC846A, B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848 VCEO Collect
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
BC846-8 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 Ideally suited for automatic insertion For Switching and AF Amplifier Applications Marking BC846A=1A;BC846B=1B; BC847A=1E;BC847B=1F;BC847C=1G; BC848A=1J;BC848B=1K;BC848C=1L; C B E Symbol Parameter Value Unit V VCBO Collector-Base Voltage 80 BC846 BC847 50 30
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
BC847 SOT-23 Plastic-Encapsulate Transistor SOT-23 BC846A, B TRANSISTOR (NPN) BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier Applications PACKAGE SPECIFICATIONS Box Size QTY/Box Reel DIA. Q'TY/Reel Carton Size Q'TY/Carton Package Reel Size (pcs) (pcs) (mm) (mm) (mm) (pcs) S
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf
BC846/847/848/849/850 TRANSISTOR NPN FEATURES Low current (max. 100 mA) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. 1.Base 2.Emitter 3.Collector DESCRIPTION SOT-23 Plastic Package NPN transistor in a SOT23 plastic package. PNP complements BC856 /857/858/859/860. ABSOLUTE MAXIMUM RATINGS (T =25 C) A Parameter Symbol Val
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
BC846/7/8 TRANSI STOR (NPN) BC846 BC847 BC848 Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Ideaiiy suited for automatic insertion For switching and AF amplifier applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage 80 BC846 VCBO 50 V BC847 30 BC848 Collector-Emitter Voltage 6
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
BC846/BC847/BC848 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features Complementary to BC856/BC857/BC858 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications Marking Mechanical Data BC846A=1A BC846B=1B Small Outline Plastic Package BC847A=
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf
BC846 THRU BC850 BC846 THRU BC850 BC846 THRU BC850 BC846 THRU BC850 BC8 46 THRU BC8 50 TRANSISTOR(NPN) FEATURE Low current (max. 100 mA) SOT-23 Low voltage (max. 65 V). 1 BASE APPLICATIONS 2 EMITTER General purpose switching and amplification. 3 COLLECTOR DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements BC856 /857/858/859/86
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
RoHS RoHS COMPLIANT COMPLIANT BC846/BC847/BC848 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Marking BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K BC848C=1L Maximum Ratings (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage 80 BC84
bc846aq bc846bq bc847aq bc847bq bc847cq bc848aq bc848bq bc848cq.pdf
RoHS COMPLIANT BC846Q THRU BC848Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications General purpose switching and amplification Mechanical Data SOT-23 Case Terminals Tin plated leads, solderable per J
bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw.pdf
RoHS RoHS COMPLIANT COMPLIANT BC846AW THRU BC848CW NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-323 Molding compound meets UL
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf
BC846/BC847/BC848 BC846/BC847/BC848 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to BC856/BC857/BC858 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications SOT-23 Small Outline Plastic Package DEVICE MARKING CODE
bc846a bc847a bc848a bc846b bc847b bc848b bc846c bc847c bc848c.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD. BC846 BC847 BC848 FEATURES NPN General Purpose Transistor MAXIMUM RATINGS Characteristic Symbol Unit BC846A,B, BC847A,B,C BC848A,B,C C Collector-Emitter Voltage V 65 45 30 Vdc CEO Collector-Base V
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD BC846/847/848 MAXIMUM RATINGS Characteristic Symbol Unit (BC846A,B) (BC847A,B,C) (BC848A,B,C) Collector-Emitter Voltage V 65 45 30 Vdc CEO Collector-Base Voltage V 80 50 30 Vdc CBO Emitter-Base Voltage
bc846a bc846b bc846c.pdf
BC846 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to BC856 Ideally suited for automatic insertion For switching and AF amplifier applications Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless othe
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
Plastic-Encapsulate Transistors FEATURES (NPN) BC846A/B For general AF applications (NPN) BC847A/B/C High collector current (NPN) BC848A/B/C High current gain Low collector-emitter saturation voltage Marking BC846A BC846B BC847A BC847B 1A 1B 1E 1F BC847C BC848A BC848B BC848C 1. BASE 2. EMITTER SOT-23 1G 1J 1K 1L 3. COLLECTO MAXIMUM RATINGS (TA=25 unless otherwise noted) Par
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf
BC846A,B BC847A, B, C BC848A, B, C Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications SOT-23 A Dim Min Max DEVICE MARKING C A 0.37 0.51 BC846A=1A; BC846B=1B; B C B 1.20 1.40 BC847A=1E; BC847B=1F; BC847C=1G; C 2.30 2.50 TOP VIEW B E BC848A=1J; BC848B=1K BC848C=1L D 0.89 1.03 D E
Другие транзисторы: BC846BDW1T1G, BC846B-G, BC846BLP4, BC846BLT1G, BC846BLT3G, BC846BM3, BC846BMB, BC846BPDW1T1G, 2N3906, BC846BW-G, BC846BWR, BC846BWT1G, BC846C-G, BC846DS, BC847A-G, BC847ALT1G, BC847AM
History: FXT603SM
🌐 : EN ES РУ
Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfp360 | bc108 equivalent | irfp4568 | mj15004 | ksc2073 | nte102a | tip31cg | s9015 transistor