Биполярный транзистор BC847ATT1 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BC847ATT1
Маркировка: 1E
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hfe): 110
Корпус транзистора: SOT416
Аналоги (замена) для BC847ATT1
BC847ATT1 Datasheet (PDF)
bc847att1 bc847btt1 bc847ctt1.pdf
BC847ATT1, BC847BTT1,BC847CTT1General PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-75/SOT-416 package whichCOLLECTORis designed for low power surface mount applications. 3Features1 NSV Prefix for Automotive and Other Applications Requiring BASEUnique Site and Control
bc847btt1g bc847att1 bc847ctt1g.pdf
BC847ATT1, BC847BTT1,BC847CTT1General PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-75/SOT-416 package whichCOLLECTORis designed for low power surface mount applications. 3Features1BASE Pb-Free Packages are Available*2EMITTERMAXIMUM RATINGS (TA = 25C)Rating
bc847att1-btt1-ctt1.pdf
BC847ATT1, BC847BTT1,BC847CTT1General PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-75/SOT-416 package whichCOLLECTORis designed for low power surface mount applications. 3Features1 Pb-Free Packages are Available* BASE2EMITTERMAXIMUM RATINGS (TA = 25C)Rating S
lbc847att1g lbc847btt1g lbc847ctt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC847ATT1GThese transistors are designed for general purpose amplifierS-LBC847ATT1Gapplications. They are housed in the SC-89 package which is designed for low power surface mount applications. SeriesFeatures Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiring Unique
bc847at bc847bt bc847ct.pdf
BC847AT, BT, CT 45V NPN SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > 45V Case: SOT523 IC = 100mA Collector Current Case Material: Molded Plastic. Green Molding Compound. Epitaxial Planar Die Construction UL Flammability Rating 94V-0 Ultra-Small Surface Mount Package Moisture Sensitivity: Level 1 per J-STD-020 Complementar
bc847at-bt-ct.pdf
BC847AT, BT, CT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Die Construction A SOT-523 Complementary PNP Types Available Dim Min Max Typ C(BC857AT,BT,CT) A 0.15 0.30 0.22 Ultra-Small Surface Mount Package B 0.75 0.85 0.80 Lead Free/RoHS Compliant (Note 2) B CTOP VIEWC 1.45 1.75 1.60 "Green" Device (Note 4 and 5) D 0.50B
bc847at-bt-ct sot-523.pdf
MCCMicro Commercial ComponentsTMBC847AT, BT, CT20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939NPNFeatures Lead Free Finish/RoHS Compliant ("P" Suffix designates Surface Mount Small RoHS Compliant. See ordering information) Epitaxial Die ConstructionSignal Transistor Complementary PNP Type Avai
bc847at.pdf
BC847AT/BT/CTCOLLECTOR3General Purpose Transistor331NPN Silicon21BASESC-89(SOT-523F)2EMITTER( T =25 C unless otherwise noted)M aximum R atings ARating Symbol Value UnitV 45Collector-Emitter Voltage CEO VdcVCBO50 VdcCollector-Base VoltageVEBO 6.0Emitter-Base Voltage VdcmAdcCollector Current-ContinuousIC 100Thermal CharacteristicsCharacter
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Список транзисторов
Обновления
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