BC847CDW1T1G. Аналоги и основные параметры
Наименование производителя: BC847CDW1T1G
Маркировка: 1G
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.38 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hFE): 420
Корпус транзистора: SOT363
Аналоги (замена) для BC847CDW1T1G
- подборⓘ биполярного транзистора по параметрам
BC847CDW1T1G даташит
bc846bdw1t1g bc847bdw1t1g bc847cdw1t1g bc848cdw1t1g.pdf
DATA SHEET www.onsemi.com Dual General Purpose Transistors SOT-363/SC-88 CASE 419B NPN Duals STYLE 1 BC846BDW1, BC847BDW1, (3) (2) (1) BC848CDW1 These transistors are designed for general purpose amplifier Q1 Q2 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (4) (5) (6) Features S and NSV Prefixes for Automotiv
bc847cdw1t1g.pdf
BC846BDW1, BC847BDW1, BC848CDW1 Dual General Purpose Transistors NPN Duals www.onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Features SOT-363 CASE 419B S and NSV Prefixes for Automotive and Other Applications STYLE 1 Requiring Unique Site and
sbc847cdw1t1g.pdf
BC846BDW1, BC847BDW1, BC848CDW1 Dual General Purpose Transistors NPN Duals www.onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Features SOT-363 CASE 419B S and NSV Prefixes for Automotive and Other Applications STYLE 1 Requiring Unique Site and
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848
Другие транзисторы: BC847BPDW1T1G, BC847BPDW1T2G, BC847BPDW1T3G, BC847BPDXV6T1G, BC847BTT1G, BC847BW-G, BC847BWR, BC847BWT1G, TIP42, BC847CDXV6T1G, BC847C-G, BC847CLT1G, BC847CLT3G, BC847CM, BC847CMB, BC847CTT1G, BC847CW-G
History: 2SC3708S | BD291 | 2SD1072 | 2SC3095
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