BC847CDW1T1G - описание и поиск аналогов

 

BC847CDW1T1G. Аналоги и основные параметры

Наименование производителя: BC847CDW1T1G

Маркировка: 1G

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.38 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 100 MHz

Ёмкость коллекторного перехода (Cc): 4.5 pf

Статический коэффициент передачи тока (hFE): 420

Корпус транзистора: SOT363

 Аналоги (замена) для BC847CDW1T1G

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BC847CDW1T1G даташит

 ..1. Size:218K  onsemi
bc846bdw1t1g bc847bdw1t1g bc847cdw1t1g bc848cdw1t1g.pdfpdf_icon

BC847CDW1T1G

DATA SHEET www.onsemi.com Dual General Purpose Transistors SOT-363/SC-88 CASE 419B NPN Duals STYLE 1 BC846BDW1, BC847BDW1, (3) (2) (1) BC848CDW1 These transistors are designed for general purpose amplifier Q1 Q2 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (4) (5) (6) Features S and NSV Prefixes for Automotiv

 ..2. Size:110K  onsemi
bc847cdw1t1g.pdfpdf_icon

BC847CDW1T1G

BC846BDW1, BC847BDW1, BC848CDW1 Dual General Purpose Transistors NPN Duals www.onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Features SOT-363 CASE 419B S and NSV Prefixes for Automotive and Other Applications STYLE 1 Requiring Unique Site and

 0.1. Size:110K  onsemi
sbc847cdw1t1g.pdfpdf_icon

BC847CDW1T1G

BC846BDW1, BC847BDW1, BC848CDW1 Dual General Purpose Transistors NPN Duals www.onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Features SOT-363 CASE 419B S and NSV Prefixes for Automotive and Other Applications STYLE 1 Requiring Unique Site and

 0.2. Size:209K  lrc
lbc846bdw1t1g lbc846bdw1t3g lbc847bdw1t1g lbc847bdw1t3g lbc847cdw1t1g lbc847cdw1t3g lbc848bdw1t1g lbc848bdw1t3g lbc848cdw1t1g lbc848cdw1t3g lbc846adw1t1g lbc846adw1t3g.pdfpdf_icon

BC847CDW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848

Другие транзисторы: BC847BPDW1T1G, BC847BPDW1T2G, BC847BPDW1T3G, BC847BPDXV6T1G, BC847BTT1G, BC847BW-G, BC847BWR, BC847BWT1G, TIP42, BC847CDXV6T1G, BC847C-G, BC847CLT1G, BC847CLT3G, BC847CM, BC847CMB, BC847CTT1G, BC847CW-G

 

 

 

 

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