Справочник транзисторов. BC848CDXV6T1G

 

Биполярный транзистор BC848CDXV6T1G Даташит. Аналоги


   Наименование производителя: BC848CDXV6T1G
   Маркировка: 1L
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.357 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 4.5 pf
   Статический коэффициент передачи тока (hfe): 420
   Корпус транзистора: SOT563
 

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BC848CDXV6T1G Datasheet (PDF)

 ..1. Size:68K  onsemi
bc848cdxv6t1g bc847cdxv6t1g.pdfpdf_icon

BC848CDXV6T1G

BC847CDXV6T1,BC847CDXV6T5BC848CDXV6T1,BC848CDXV6T5Dual General Purposehttp://onsemi.comTransistorsNPN Duals(3) (2) (1)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-563 which is designed forQ1 Q2low power surface mount applications. Lead-Free Solder Plating(4) (5) (6)MAXIMUM RATINGSBC847CDXV6T1Rating Symb

 ..2. Size:96K  onsemi
bc847cdxv6t1g bc847cdxv6t5g bc848cdxv6t1g.pdfpdf_icon

BC848CDXV6T1G

BC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General PurposeTransistorshttp://onsemi.comNPN Duals(3) (2) (1)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-563 which is designed forlow power surface mount applications.Q1 Q2Features These are Pb-Free Devices(4) (5) (6)BC847CDXV6T1MAXIMUM RATINGSRating Symb

 ..3. Size:132K  onsemi
bc847cdxv6t1g bc848cdxv6t1g.pdfpdf_icon

BC848CDXV6T1G

BC847CDXV6T1G,SBC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General Purposehttp://onsemi.comTransistors(3) (2) (1)NPN DualsThese transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-563 which is designed forlow power surface mount applications.(4) (5) (6)Features AEC-Q101 Qualified and PPAP CapableBC847CDXV6T1

 ..4. Size:200K  onsemi
bc847cdxv6t1g sbc847cdxv6t1g bc847cdxv6t5g bc848cdxv6t1g.pdfpdf_icon

BC848CDXV6T1G

BC847CDXV6T1G,SBC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General Purposehttp://onsemi.comTransistors(3) (2) (1)NPN DualsThese transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-563 which is designed forlow power surface mount applications.(4) (5) (6)Features AEC-Q101 Qualified and PPAP CapableBC847CDXV6T1

Другие транзисторы... BC848BF , BC848B-G , BC848BL3 , BC848BLT1G , BC848BLT3G , BC848BW-G , BC848BWT1G , BC848CDW1T1G , 13001-A , BC848C-G , BC848CLT1G , BC848CPDW1T1G , BC848CW-G , BC848CWT1G , BC848S , BC849BF , BC849BLT1G .

History: TN5449 | DTA144EUA | NTE107 | 2SA227 | 2SC1209 | BC857BTT1G | DT6105

 

 
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