BC849BLT1G. Аналоги и основные параметры
Наименование производителя: BC849BLT1G
Маркировка: 2B
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.225 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hFE): 200
Корпус транзистора: SOT23
Аналоги (замена) для BC849BLT1G
- подбор ⓘ биполярного транзистора по параметрам
BC849BLT1G даташит
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BC846ALT1G Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model >4000 V ESD Rating - Machine Model >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 These Devices are Pb-
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BC846ALT1G Series General Purpose Transistors NPN Silicon Features www.onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model > 4000 V ESD Rating - Machine Model > 400 V COLLECTOR 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Device
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General Purpose Transistors NPN Silicon BC846ALT1G Series Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model > 4000 V ESD Rating - Machine Model > 400 V COLLECTOR S and NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Device
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BC846ALT1G Series General Purpose Transistors NPN Silicon Features www.onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model > 4000 V ESD Rating - Machine Model > 400 V COLLECTOR 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Device
Другие транзисторы... BC848CDXV6T1G , BC848C-G , BC848CLT1G , BC848CPDW1T1G , BC848CW-G , BC848CWT1G , BC848S , BC849BF , TIP120 , BC849CLT1G , BC849S , BC850BLT1G , BC850CLT1G , BC850S , BC856ALT1G , BC856AW-G , BC856BDW1T1G .
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Список транзисторов
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