BC856C - аналоги, параметры транзистора - Справочник транзисторов

..1. Size:99K diotec
bc856c.pdf pdf_icon

BC856 ... BC860 BC856 ... BC860 Surface Mount General Purpose Si-Epi-Planar Transistors PNP PNP Si-Epi-Planar Universaltransistoren f r die Oberfl chenmontage Version 2011-11-07 Power dissipation Verlustleistung 250 mW 0.1 1.1 2.9 Plastic case SOT-23 0.4 3 Kunststoffgeh use (TO-236) Type Weight approx. Gewicht ca. 0.01 g Code 1 2 Plastic material has UL classif

..2. Size:639K cn shikues
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..3. Size:3051K cn twgmc
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BC856 THRU BC860 BC856 THRU BC860 BC856 THRU BC860 BC8 56 THRU BC8 60 TRANSISTOR(PNP) FEATURES Switching and Amplifier Applications SOT-23 Suitable for automatic insertion in thick and thin-film circuits 1 BASE Low Noise BC859, BC860 2 EMITTER 3 COLLECTOR Complement to BC846 ... BC850 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collec

..4. Size:409K cn cbi
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BC856 BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications 1.BASE 2.EMITTER 3.COLLECTOR SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V BC858, BC859 -

0.1. Size:215K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

0.2. Size:140K comchip
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Small Signal Transistor BC856AW-G Thru. BC858CW-G (PNP) RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications SOT-323 -Power dissipation PCM 0.15W (@TA=25 C) 0.087 (2.20) 0.079 (2.00) -Collector current 3 ICM -0.1A -Collector-base voltage 0.053(1.35) 0.045(1.15) VCBO BC856W= -80V BC857W= -50V 1 2 0.006 (0.15) BC85

9.1. Size:251K motorola
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC856AWT1/D General Purpose Transistors BC856AWT1,BWT1 PNP Silicon BC857AWT1,BWT1 COLLECTOR BC858AWT1,BWT1, These transistors are designed for general purpose amplifier 3 applications. They are housed in the SOT 323/SC 70 which is CWT1 designed for low power surface mount applications. 1 Motorola Preferred Devices B

9.2. Size:249K motorola
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9.3. Size:56K philips
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DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC856S PNP general purpose double transistor Product specification 1999 Aug 24 Philips Semiconductors Product specification PNP general purpose double transistor BC856S FEATURES Two transistors in one package Reduces number of components and board space 6 5 4 handbook, halfpage No mutual interference between

9.4. Size:157K philips
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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC856W; BC857W; BC858W PNP general purpose transistors Product data sheet 2002 Feb 04 Supersedes data of 1999 Apr 12 NXP Semiconductors Product data sheet BC856W; BC857W; PNP general purpose transistors BC858W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter

9.5. Size:46K philips
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DISCRETE SEMICONDUCTORS DATA SHEET M3D425 BC856F; BC857F; BC858F series PNP general purpose transistors 1999 May 21 Preliminary specification Supersedes data of 1998 Nov 10 Philips Semiconductors Preliminary specification PNP general purpose transistors BC856F; BC857F; BC858F series FEATURES PINNING Power dissipation comparable to SOT23 PIN DESCRIPTION Low current (max. 10

9.6. Size:87K philips
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BC856S 65 V, 100 mA PNP/PNP general-purpose transistor Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces nu

9.7. Size:78K philips
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DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BC856T; BC857T series PNP general purpose transistors Product specification 2000 Nov 15 Supersedes data of 1999 Apr 26 Philips Semiconductors Product specification PNP general purpose transistors BC856T; BC857T series FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter APPLICATIONS

9.8. Size:56K philips
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DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D187 BC856W; BC857W PNP general purpose transistors 1999 Apr 12 Product specification Supersedes data of 1997 Apr 07 Philips Semiconductors Product specification PNP general purpose transistors BC856W; BC857W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 80) 1 base S-mini package.

9.9. Size:158K philips
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DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858 PNP general purpose transistors Product data sheet 2004 Jan 16 Supersedes data of 2003 Apr 09 NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter APPLICATIONS 3 collector G

9.10. Size:93K philips
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BC856BS 65 V, 100 mA PNP/PNP general-purpose transistor Rev. 01 11 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN NPN/PNP complement complement NXP JEITA BC856BS SOT363 SC-88 BC846BS BC846BPN 1.2 Fe

9.11. Size:53K philips
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC856; BC857 PNP general purpose transistors 1999 Apr 12 Product specification Supersedes data of 1997 Apr 17 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter APPLICATIONS

9.12. Size:147K philips
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DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BC856T; BC857T series PNP general purpose transistors Product data sheet 2000 Nov 15 Supersedes data of 1999 Apr 26 NXP Semiconductors Product data sheet BC856T; BC857T PNP general purpose transistors series FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter APPLICATIONS 3 c

9.13. Size:144K fairchild semi
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August 2006 BC856- BC860 tm PNP Epitaxial Silicon Transistor Features Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits 3 Low Noise BC859, BC860 Complement to BC846 ... BC850 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO

9.14. Size:658K nxp
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BC856BM 60 V, 100 mA PNP general-purpose transistor 19 August 2015 Product data sheet 1. General description PNP general-purpose transistor in a leadless ultra small DFN1006-3 (SOT883) Surface- Mounted Device (SMD) plastic package. NPN complement BC846BM. 2. Features and benefits Leadless ultra small SMD plastic package Power dissipation comparable to SOT23 AEC-Q101 quali

9.15. Size:204K nxp
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

9.16. Size:157K nxp
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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC856W; BC857W; BC858W PNP general purpose transistors Product data sheet 2002 Feb 04 Supersedes data of 1999 Apr 12 NXP Semiconductors Product data sheet BC856W; BC857W; PNP general purpose transistors BC858W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter

9.17. Size:1099K nxp
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BC856BS 65 V, 100 mA PNP/PNP general-purpose transistor Rev. 01 11 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN NPN/PNP complement complement Nexperia JEITA BC856BS SOT363 SC-88 BC846BS BC846BPN 1

9.18. Size:201K nxp
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BC856; BC857; BC858 65 V, 100 mA PNP general-purpose transistors Rev. 7 16 April 2018 Product data sheet 1 Product profile 1.1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN complement Nexperia JEDEC BC856 SOT23 TO-236AB BC846 BC856A BC846A BC856B BC84

9.19. Size:158K nxp
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DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858 PNP general purpose transistors Product data sheet 2004 Jan 16 Supersedes data of 2003 Apr 09 NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter APPLICATIONS 3 collector G

9.20. Size:56K samsung
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PNP EPITAXIAL BC856/857/858/859/860 SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE BC859, BC860 Complement to BC846 ... BC850 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO BC856 -80 V BC857/860 -50 V BC858/859 -30 V Collecto

9.21. Size:42K siemens
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BC 856S PNP Silicon AF Transistor Array 4 For AF input stages and driver applications 5 High current gain 6 Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with high matching in one package 3 2 VPS05604 1 Type Marking Ordering Code Pin Configuration Package BC 856S 3Ds Q62702-C2532 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363 Maxi

9.22. Size:273K siemens
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PNP Silicon AF Transistors BC 856W ... BC 860W Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC 847W, BC 848W, BC 849W, BC 850W (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BC 856 AW 3As Q62702-C2335 B E C SOT-323 BC 856

9.23. Size:271K siemens
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PNP Silicon AF Transistors BC 856 ... BC 860 Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC 846, BC 847, BC 849, BC 850 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BC 856 A 3As Q62702-C1773 B E C SOT-23 BC 856 B 3Bs Q6

9.24. Size:401K central
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BC856W SERIES BC857W SERIES www.centralsemi.com SURFACE MOUNT DESCRIPTION PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE SEE MARKING CODE

9.25. Size:344K central
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BC856T SERIES BC857T SERIES www.centralsemi.com SURFACE MOUNT DESCRIPTION PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR BC856T and BC857T Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE SEE MARKING CODE TABLE ON FOL

9.26. Size:117K diodes
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BC856AW - BC858CW PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Ideally Suited for Automated Insertion SOT-323 Complementary NPN Types Available (BC846W-BC848W) C Dim Min Max For Switching and AF Amplifier Applications A 0.25 0.40 Lead Free/RoHS Compliant (Note 3) B C B 1.15 1.35 "Green" Device (Note 4 and 5) C 2.00 2.20 BE D 0.65 Nominal

9.27. Size:113K diodes
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BC856A - BC858C PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database. Features Ideally Suited for Automatic Insertion Complementary NPN Types Available (BC846-BC848) A SOT-23 For Switching and AF Amplifier Applications C Dim Min Max Qualified to AEC-Q101 Standards for High Reliability A 0.37 0.51 B C Lead

9.28. Size:35K diodes
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SOT23 PNP SILICON PLANAR BC856 BC857 BC858 BC859 GENERAL PURPOSE TRANSISTORS BC860 ISSUE 6 - APRIL 1997 T I D T I T T E 8 8 8 8 8 C 8 8 8 8 8 8 8 8 8 8 B 8 8 8 8 8 8 8 8 SOT23 8 8 8 8 8 8 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I I I I I Di i i T i T T T ELECTRICAL CH

9.29. Size:203K diodes
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BC856AW-BC858CW PNP SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Ideally Suited for Automatic Insertion Case SOT323 Complementary NPN Types Available (BC846AW BC848CW) Case material molded plastic, Green molding compound For switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Ful

9.30. Size:290K diodes
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BC856A-BC858C PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case SOT23 Complementary NPN Types BC846 BC848 Case Material Molded Plastic, Green Molding Compound For Switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Not

9.31. Size:536K diodes
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BC856AS 65V DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data BVCEO > -65V Case SOT363 IC = -100mA High Collector Current Case Material Molded Plastic, Green Molding Compound. Complementary NPN Types Available (BC846AS) UL Flammability Classification Rating 94V-0 Ideally Suited for Automatic Insertion Moisture Sensi

9.32. Size:354K diodes
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BC856A-BC858C PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case SOT23 Complementary NPN Types BC846 BC848 Case Material Molded Plastic, Green Molding Compound For Switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Not

9.33. Size:140K infineon
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BC856...-BC860... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 20

9.34. Size:140K infineon
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BC856...-BC860... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 20

9.35. Size:849K infineon
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BC856S/U_BC857S PNP Silicon AF Transistor Arrays For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated transistor with good matching in one package BC856S / U, BC857S For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according

9.36. Size:778K mcc
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BC856AW THRU BC858CW Features Halogen free available upon request by adding suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS General Purpose Compliant. See Ordering Information) Transistors Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Tempera

9.37. Size:1243K mcc
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BC856S Features Muti-Chip Transistor Halogen Free. Green Device (Note 1) PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Plastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Transistors Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified SOT-363 Operating Junct

9.38. Size:468K mcc
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M C C BC856A R Micro Commercial Components Micro Commercial Components THRU 130 W Cochran St, Unit B Simi Valley, CA 93065 BC858C Tel 818-701-4933 Features PNP Small Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Signal Transistor Moisure Sensitivity Level 1 Ideally Suited for Au

9.39. Size:796K mcc
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BC856BS Features Muti-Chip Transistor Halogen Free Available Upon Request By Adding Suffix "-HF" PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Plastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Transistors Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified SOT-363

9.40. Size:195K mcc
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BC856A MCC Micro Commercial Components TM THRU 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 BC858C Fax (818) 701-4939 Features PNP Small Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Signal Transistor Moisure Sensitivity Level 1

9.41. Size:148K onsemi
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BC856ALT1G Series General Purpose Transistors PNP Silicon Features www.onsemi.com S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) 2

9.42. Size:82K onsemi
bc856bdw1t1g bc857bdw1t1g bc857cdw1t1g bc858cdw1t1g.pdf pdf_icon

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series www.onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 These transistors are designed for general purpose amplifier CASE 419B STYLE 1 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (3) (2) (1) Features S

9.43. Size:156K onsemi
bc856bdw1t1g sbc856bdw1t1g bc857bdw1t1g sbc857bdw1t1g bc857cdw1t1g sbc857cdw1t1g bc858cdw1t1g.pdf pdf_icon

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series www.onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 These transistors are designed for general purpose amplifier CASE 419B STYLE 1 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (3) (2) (1) Features S

9.44. Size:167K onsemi
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BC856ALT1G Series General Purpose Transistors PNP Silicon Features http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) 2 EMITTER Rating Symbol Value Unit Collector-Emitter Voltage BC856 VCEO -65 V BC857 -45 BC858, BC859 -30 3 Collector-Base Voltage BC856 VCBO -80

9.45. Size:81K onsemi
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BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

9.46. Size:57K onsemi
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EMT1DXV6 Dual General Purpose Transistor PNP Dual This transistor is designed for general purpose amplifier http //onsemi.com applications. It is housed in the SOT-563 which is designed for low power surface mount applications. (3) (2) (1) Features Lead-Free Solder Plating Low VCE(SAT), t0.5 V Q1 Q2 NSV Prefix for Automotive and Other Applications Requiring Unique Site

9.47. Size:160K onsemi
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BC856BM3, NSVBC856BM3 General Purpose Transistor PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT-723 which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 Qualifie

9.48. Size:181K onsemi
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BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices http //onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 CASE 419B STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applicat

9.49. Size:206K onsemi
bc856alt1g.pdf pdf_icon

BC856ALT1G Series General Purpose Transistors PNP Silicon Features www.onsemi.com S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) 2

9.50. Size:181K onsemi
bc856bdw1t1g bc857cdw1t1g.pdf pdf_icon

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices http //onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 CASE 419B STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applicat

9.51. Size:81K onsemi
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BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

9.52. Size:209K onsemi
bc856alt1g bc856blt1g bc857alt1g bc857blt1g bc857clt1g bc858alt1g bc858blt1g bc858clt1g bc859blt1g bc859clt1g.pdf pdf_icon

BC856ALT1G Series General Purpose Transistors PNP Silicon Features www.onsemi.com S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) 2

9.53. Size:143K onsemi
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BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series General Purpose Transistors http //onsemi.com PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC--70/SOT--323 which is designed for low power surface mount applications. 1 BASE Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS 2

9.54. Size:78K onsemi
bc856bwt1g bc857bwt1g bc857cwt1g bc858awt1g bc858bwt1g.pdf pdf_icon

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

9.55. Size:181K onsemi
sbc856bdw1t3g.pdf pdf_icon

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices http //onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 CASE 419B STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applicat

9.56. Size:55K onsemi
bc856bm3t5g-d.pdf pdf_icon

BC856BM3T5G Preferred Devices General Purpose Transistor PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT-723 which is designed for low power surface mount applications. http //onsemi.com This is a Pb-Free Device COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO -65 V Collecto

9.57. Size:181K onsemi
bc856bdw1t3g bc857bdw1t1g.pdf pdf_icon

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices http //onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 CASE 419B STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applicat

9.58. Size:172K onsemi
bc856bdw1t1g bc857bdw1t1g bc858cdw1t1g.pdf pdf_icon

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors http //onsemi.com PNP Duals (3) (2) (1) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Q1 Q2 Features These Devices are Pb-Free, Halogen Free/BFR Fr

9.59. Size:156K onsemi
bc856bdw1t1g bc857bdw1t1g sbc857bdw1t1g bc857cdw1t1g bc858cdw1t1g.pdf pdf_icon

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series www.onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 These transistors are designed for general purpose amplifier CASE 419B STYLE 1 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (3) (2) (1) Features S

9.60. Size:801K onsemi
bc856blt1g bc857clt3g bc856blt3g bc857blt1g bc857blt3g bc858blt3g bc858alt1g bc857clt1g.pdf pdf_icon

BC856ALT1G Series, SBC856ALT1G Series General Purpose Transistors PNP Silicon http //onsemi.com Features S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Compliant 2 EMITTER 3 MAXIMUM RATINGS

9.61. Size:178K auk
bc856uf.pdf pdf_icon

BC856UF Semiconductor Semiconductor PNP Silicon Transistor Descriptions General purpose application Switching application Features High voltage VCEO=-55V Complementary pair with BC846UF Ordering Information Type NO. Marking Package Code BC856UF CV SOT-323F hFE rank Outline Dimensions unit mm 1.95 2.25 1.20 1.40 1 3 2 PIN Connect

9.62. Size:279K auk
bc856f.pdf pdf_icon

BC856F PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application 3 Features 1 High voltage VCEO=-55V Complementary pair with BC846F 2 SOT-23F Ordering Information Type NO. Marking Package Code TA BC856F SOT-23F Device Code hFE Rank Year&Week Code Absolute maximum

9.63. Size:269K auk
bc856.pdf pdf_icon

BC856 PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application C Features B High voltage VCEO=-55V E Complementary pair with BC846 SOT-23 Ordering Information Type NO. Marking Package Code TA BC856 SOT-23 Device Code hFE Rank Year&Week Code Absolute maximum rati

9.64. Size:269K auk
bc856u.pdf pdf_icon

BC856U PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application 3 Features 1 High voltage VCEO=-55V 2 Complementary pair with BC846U SOT-323 Ordering Information Type NO. Marking Package Code CV BC856U SOT-323 Device Code hFE Rank Year&Week Code Absolute maximum r

9.65. Size:77K rectron
bc856-bc857-bc858.pdf pdf_icon

BC856 BC857 BC858 PNP Silicon Planar Epitaxial Transistors Pin configuration 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit inch (mm) Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) SYMBOL BC856 BC857 BC858 UNITS DESCRIPTION VCBO Collector Base Voltage 80 50 30 V Collector Emmitter Voltage (+VBE = 1V) VCEX 80 50 30 V VCEO Collector Emitter Voltage 65 45 30

9.66. Size:258K secos
bc856a-bc857a-bc858a.pdf pdf_icon

BC856A, B BC857A, B, C Elektronische Bauelemente BC858A, B, C A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 n A General Purpose Transistor PNP Type Dim Min Max L n Collect current - 0.1A A 2.800 3.040 O O n Operating Temp. -55 C +150 C 3 B 1.200 1.400 S Top View B n RoHS compliant product C 0.890 1.110 1 2 D 0.370 0.500 V G G 1.780 2.040 COLLE

9.67. Size:444K secos
bc856aw-bc857aw-bc858aw.pdf pdf_icon

BC856AW, BW BC857AW, BW, CW Elektronische Bauelemente BC858AW, BW, CW RoHS Compliant Product FEATURES * Ideally suited for automatic insertion * For Switching and AF Amplifier Applications SOT-323 O O * Operating Temp. -55 C +150 C Dim Min Max A A 1.800 2.200 L B 1.150 1.350 C OLLE C TOR 3 C 0.800 1.000 S Top View 3 B 12 D 0.300 0.400 G 1.200 1.400 1 V G H 0.000 0.

9.68. Size:352K taiwansemi
bc856a bc857a bc858a bc856b bc857b bc858b bc857c bc858c.pdf pdf_icon

BC856A SERIES Taiwan Semiconductor Small Signal Product 200mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code MECHANICA

9.69. Size:371K cdil
bc856w bc857w bc858w.pdf pdf_icon

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G BC857W =3H BC858W =3M General Purpose Switching and Amplification. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise

9.70. Size:79K cdil
bc856 bc857 bc858.pdf pdf_icon

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P N P transistors Marking PACKAGE OUTLINE DETAILS BC856 = 3D ALL DIMENSIONS IN mm BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L Pi

9.71. Size:149K jiangsu
bc856w bc857w bc858w.pdf pdf_icon

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors BC856W TRANSISTOR (PNP) BC857W SOT-323 BC858W 1. BASE FEATURES 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Volta

9.72. Size:712K jiangsu
bc856s.pdf pdf_icon

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (PNP+PNP) 6 5 4 Two transistors in one package 1 2 3 Reduces number of components and board space No mutual interference between the transistors

9.73. Size:976K jiangsu
bc856 bc857 bc858.pdf pdf_icon

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD J C T SOT-23 Plastic-Encapsulate Transistors BC856 TRANSISTOR (PNP) BC857 SOT-23 BC858 FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Volta

9.74. Size:729K jiangsu
ad-bc856 ad-bc857 ad-bc858.pdf pdf_icon

www.jscj-elec.com AD-BC856/57/58 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-BC856/57/58 Series Plastic-Encapsulated Transistor AD-BC856/57/58 series Transistor (PNP) FEATURES Ideally suited for automatic insertion For switching and AF amplifier applications AEC-Q101 qualified MARKING AD-BC856-A = 3A; AD-BC856-B = 3B AD-BC857-A = 3E; AD-BC8

9.75. Size:445K jiangsu
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf pdf_icon

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC856A, B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Colle

9.76. Size:34K kec
bc856w bc857w bc858w.pdf pdf_icon

SEMICONDUCTOR BC856W/7W/8W TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E M B M DIM MILLIMETERS FEATURES _ A + 2.00 0.20 D 2 For Complementary With NPN Type BC846W/847W/848W. _ + B 1.25 0.15 _ + C 0.90 0.10 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 MAXIMUM RATING (Ta=25 ) K 0.00-0.

9.77. Size:394K kec
bc856 bc857 bc858.pdf pdf_icon

SEMICONDUCTOR BC856/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 For Complementary With NPN Type BC846/847/848. C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 0.10 MAXIMUM RATING (Ta=25 ) L 0.55 P P

9.78. Size:1334K htsemi
bc856 bc857 bc858.pdf pdf_icon

BC856A,B BC857A, B,C BC858A, B,C TRANSISTOR (PNP) FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications SOT-23 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage BC856 -80 V BC857 -50 BC858 -30 VCEO Collector-Emitter Voltage B

9.79. Size:674K htsemi
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf pdf_icon

BC856A,B BC857A, B,C BC858A, B,C TRANSISTOR (PNP) FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications SOT-23 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage BC856 -80 V BC857 -50 BC858 -30 VCEO Collector-Emitter Voltage B

9.80. Size:300K gsme
bc856.pdf pdf_icon

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM856,857,858( BC856,857,858) MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol GM856A,B GM857A,B,C GM

9.81. Size:283K lge
bc856a-b bc857a-b-c bc858a-b-c.pdf pdf_icon

BC856A,B BC857A,B,C BC858A,B,C SOT-23 Transistor(PNP) 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BC856 -80 V BC857 -50 BC858 -30 Dimensions in inches and (millimeters

9.82. Size:2038K lge
bc856 bc857 bc858.pdf pdf_icon

BC856/857/858 PNP general purpose Transistor A SOT-23 FEATURES Dim Min Max Low current.(max.100mA). A 2.70 3.10 E B 1.10 1.50 Low voltage.. K B C 1.0 Typical APPLICATIONS D 0.4 Typical E 0.35 0.48 General purpose switching and amplification. G 1.80 2.00 J D H 0.02 0.1 G J 0.1 Typical ORDERING INFORMATION K 2.20 2.60 H Type No. Marking Package Code C All Dim

9.83. Size:279K lge
bc856aw-bw bc857aw-bw-cw bc858aw-bw-cw.pdf pdf_icon

BC856AW,BW BC857AW,BW,CW BC858AW,BW,CW STO-323 Transistor(PNP) 1. BASE 2. EMITTER SOT-323 3. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage BC856W -80 VCBO V BC857W -50 Dimensions in inches and (millimeters)

9.84. Size:546K wietron
bc856aw bc857aw bc858aw.pdf pdf_icon

BC856AW/BW BC857AW/BW BC858AW/BW/CW COLLECTOR General Purpose Transistor 3 3 PNP Silicon 1 1 P b Lead(Pb)-Free BASE 2 2 EMITTER SOT-323(SC-70) MaximumRatings (TA=25 Cunless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage BC856 -65 VCEO BC857 -45 V BC858 -30 Collector-Base Voltage BC856 -80 VCBO BC857 -50 V BC858 -30 Emitter-Base Voltage BC856 -5.0

9.85. Size:1005K wietron
bc856bdw bc857 bc858.pdf pdf_icon

BC856BDW Series PNP Dual General Purpose Transistors 2 1 3 P b Lead(Pb)-Free 6 5 4 1 2 3 4 5 6 PNP+PNP SOT-363(SC-88) Maximum Ratings Rating Symbol BC856 BC857 BC858 Unit 65 45 30 Collector-Emitter Voltage VCEO V 80 50 30 Collector-Base Voltage VCBO V 5.0 5.0 5.0 Emitter-Base Voltage VEBO V Collector Current-Continuous IC 100 100 100 mA Thermal Characteristics Chara

9.86. Size:438K wietron
bc856 bc857 bc858 bc859.pdf pdf_icon

BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C COLLECTOR 3 General Purpose Transistor MARKING DIAGRAM 3 3 PNP Silicon 1 1 2 BASE XX = Device SOT-23 Code (See 1 2 Table Below) 2 EMITTER ( T =25 C unless otherwise noted) Maximum Ratings A Rating Symbol Value Unit Collector-Emitter Voltage V -65 BC856 CEO V BC857 -45 BC858,BC859 -30 Collector-Base Voltage BC856 -80 V BC857

9.87. Size:38K hsmc
hbc856.pdf pdf_icon

Spec. No. HE6832 HI-SINCERITY Issued Date 1994.02.03 Revised Date 2004.09.01 MICROELECTRONICS CORP. Page No. 1/4 HBC856 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC856 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. SOT-23 Absolute Maximum Ratings Maximum Temperatures Storage Temperature.

9.88. Size:244K shenzhen
bc856 bc857 bc858.pdf pdf_icon

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors BC856A,B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Colle

9.89. Size:560K can-sheng
bc856 bc857 bc858 sot-23.pdf pdf_icon

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors BC856A,B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES Ideally suited for automatic insertion 1 BASE For Switching and AF Amplifier Applications 2 EMTTER 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless

9.90. Size:890K blue-rocket-elect
bc856.pdf pdf_icon

9.91. Size:253K semtech
bc856lt1.pdf pdf_icon

BC856LT1 BC858LT1 PNP Silicon General Purpose Transistors for switching and amplifier applications. As complementary types the NPN transistors BC846ALT1...BC850CLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 oC) Symbol BC856 BC857 BC858 Unit Collector Base Voltage -VCBO 80 50 30 V Collector Emitter Voltage -VCEO 65 45 30 V Emitter Base Voltage -

9.92. Size:173K semtech
bc856 bc857 bc858 bc859 bc860.pdf pdf_icon

BC856 BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V BC858, BC859 -VCEO 30 V Emitter Base Volt

9.93. Size:159K lrc
lbc856alt3g lbc856blt3g lbc857alt1g lbc857blt3g lbc857clt1g lbc858alt1g lbc858blt3g lbc858clt3g lbc859blt1g lbc859clt3g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

9.94. Size:234K lrc
lbc856alt1g lbc856blt1g lbc857alt1g lbc857alt1g lbc857blt1g lbc857clt1g lbc857clt1g lbc858alt1g lbc858alt1g lbc858blt1g lbc858clt1g lbc859blt1g lbc859blt1g lbc859clt1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V LBC857CLT1G ESD Rating Machine Model >400 V S-LBC857CLT1G We declare that the material of product compliance with Series RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch

9.95. Size:235K lrc
lbc856blt1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 LBC857CLT1G ESD Rating Human Body Model >4000 V S-LBC857CLT1G ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and Control

9.96. Size:234K lrc
lbc856alt1g lbc856alt3g lbc856blt1g lbc856blt3g lbc857alt1g lbc857alt1g lbc857blt1g lbc857blt3g lbc857clt1g lbc857clt1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V LBC857CLT1G ESD Rating Machine Model >400 V S-LBC857CLT1G We declare that the material of product compliance with Series RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch

9.97. Size:233K lrc
lbc856alt1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V LBC857CLT1G ESD Rating Machine Model >400 V S-LBC857CLT1G We declare that the material of product compliance with Series RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch

9.98. Size:158K lrc
lbc856alt1g lbc856blt1g lbc857alt1g lbc857blt1g lbc857clt1g lbc858alt1g lbc858blt1g lbc858clt1g lbc859blt1g lbc859clt1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1 Unique Sit

9.99. Size:182K lrc
lbc856bdw1t1g lbc857bdw1t1g lbc857cdw1t1g lbc858bdw1t1g lbc858cdw1t1g lbc856adw1t1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 6 5 4 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other A

9.100. Size:254K lrc
lbc856awt1g lbc856bwt1g lbc857awt1g lbc857bwt1g lbc857cwt1g lbc858awt1g lbc858bwt1g lbc858cwt1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features We declare that the material of product

9.101. Size:194K lrc
lbc856adw1t1g lbc856bdw1t1g lbc857bdw1t1g lbc857cdw1t1g lbc858bdw1t1g lbc858cdw1t1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G 6 5 These transistors are designed for general purpose amplifier 4 applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 1 We declare that the material of product compliance with RoHS requirements. 2 3 S- Prefix for Automotive an

9.102. Size:182K lrc
lbc856bdw1t1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 6 5 4 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other A

9.103. Size:278K lrc
lbc856bwt1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features We declare that the material of product

9.104. Size:353K lrc
lbc856blt1g lbc856blt3g.pdf pdf_icon

LBC856BLT1G S-LBC856BLT1G General Purpose Transistors PNP Silicon 1. FEATURES Moisture Sensitivity Level 1 SOT23(TO-236) ESD Rating Human Body Model >4000 V Machine Model >400 V We declare that the material of product compliance with 3 COLLECTOR RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring 1 unique si

9.105. Size:490K first silicon
bc856-9s.pdf pdf_icon

SEMICONDUCTOR BC856 / 857 / 858 / 859S TECHNICAL DATA General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. 2 MAXIMUM RATINGS (TA = 25 C unless otherwise noted) 1 Rating Symbol Value Unit SOT 23

9.106. Size:318K first silicon
bc856-8u.pdf pdf_icon

SEMICONDUCTOR BC856U/ 857U/ 858U TECHNICAL DATA General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/ SC 70 which is designed for low power surface mount applications. 3 Features 2 We declare that the material of product compliance with 1 RoHS requirements. SOT 323 / SC-70 MAXIMUM

9.107. Size:1157K kexin
bc856w bc857w bc858w.pdf pdf_icon

SMD Type Transistors PNP Transistors BC856W,BC857W,BC858W (KC856W,KC857W,KC858W) Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit BC856W -80 Collector - Base Voltage BC857W VCBO -50 BC858W -30 BC856W -65 V Collector - Emitte

9.108. Size:1990K kexin
bc856bdw-858cdw.pdf pdf_icon

SMD Type Transistors PNP Transistors BC856BDW BC858CDW (KC856BDW KC858CDW) Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-65V/-45V/-30V 2 1 3 4 5 6 Absolute Maximum Ratings Ta = 25 BC857 BC858 Parameter Symbol BC856BDW Unit BDW/CDW BDW/CDW Collector - Base Voltage VCBO -80 -50 -30 Collector - Emitter Voltage VCEO -65 -45

9.109. Size:902K kexin
bc856s.pdf pdf_icon

SMD Type Transistors PNP Transistors BC856S (KC856S) Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-65V PNP General Purpose Double Transistor 6 5 4 TR2 TR1 1 2 3 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -65 V Emitter - Base Voltage V

9.110. Size:1596K kexin
bc856 bc857 bc858.pdf pdf_icon

SMD Type Transistors PNP Transistors BC856 BC858 (KC856 KC858) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol BC856 BC857 BC858 Unit C

9.111. Size:1358K kexin
bc856bs.pdf pdf_icon

SMD Type Transistors PNP Transistors BC856BS (KC856BS) Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain 6 5 4 Reduces number of components and board space TR2 TR1 1 2 3 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage

9.112. Size:143K panjit
bc856aw bc856bw bc857aw bc857bw bc857cw bc858aw bc858bw bc858cw.pdf pdf_icon

BC856AW BC859CW PNP GENERAL PURPOSE TRANSISTORS 30/45/65 Volts POWER 250 mWatts VOLTAGE FEATURES General purpose amplifier applications PNP epitaxial silicon, planar design Collector current IC = 100mA Complimentary (NPN) Devices BC846AW/BC847AW/BC848AW/ BC849BW Series Lead free in comply with EU RoHS 2011/65/EU directives Green molding compound as per IEC

9.113. Size:393K panjit
bc856bs.pdf pdf_icon

BC856BS PNP GENERAL PURPOSE DUAL TRANSISTORS VOLTAGE POWER 150 mWatt 65 Volt FEATURES General purpose amplifier applications Collector current Ic = 100mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA Case SOT-363, Plastic Terminals Solderable per MIL-STD-750, Method 20

9.114. Size:176K panjit
bc856a bc857a bc858a bc856b bc857b bc858b bc859b bc857c bc858c bc859c.pdf pdf_icon

BC856 SERIES PNP GENERAL PURPOSE TRANSISTORS POWER 330 mWatt VOLTAGE 30/45/65 Volt FEATURES 0.120(3.04) General Purpose Amplifier Applications 0.110(2.80) Collector Current IC = -100mA Complimentary (PNP) Devices BC846/BC847/BC848/BC849 Series Lead free in compliance with EU RoHS 2011/65/EU directive 0.056(1.40) 0.047(1.20) Green molding compound as per IEC61

9.115. Size:140K comchip
bc856aw-g bc856bw-g.pdf pdf_icon

Small Signal Transistor BC856AW-G Thru. BC858CW-G (PNP) RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications SOT-323 -Power dissipation PCM 0.15W (@TA=25 C) 0.087 (2.20) 0.079 (2.00) -Collector current 3 ICM -0.1A -Collector-base voltage 0.053(1.35) 0.045(1.15) VCBO BC856W= -80V BC857W= -50V 1 2 0.006 (0.15) BC85

9.116. Size:172K galaxy
bc856t.pdf pdf_icon

BL Galaxy Electrical Production specification PNP General Purpose Transistor BC856T/BC857T FEATURES Pb Low current(max.100mA) Lead-free Low voltage(max.65V) APPLICATIONS General purpose switching and amplification,especially In portable equipment. SOT-523 ORDERING INFORMATION Type No. Marking Package Code BC856AT 3A SOT-523 BC856BT 3B SOT-523 BC857AT 3E SOT-5

9.117. Size:685K slkor
bc856w-bc857w-bc858w.pdf pdf_icon

BC856W-BC858W Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES SOT-323 Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Unit Collector-Base Voltage BC856W -80 VCBO V BC857W -50 BC858W -30 Collector-Emitter Voltage

9.118. Size:1882K slkor
bc856 bc857 bc858.pdf pdf_icon

BC856-BC858 TRANSISTOR PNP SOT-23 FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage BC856 -80 VCBO V BC857 -50 BC858 -30 Collector-Emitter Voltage BC856 -65 VCEO V BC857 -45 B

9.119. Size:688K slkor
bc856aw 857aw 858aw bc856bw 857bw 858bw bc857cw bc858cw.pdf pdf_icon

BC856W-BC858W Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES SOT-323 Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage BC856W -80 VCBO V BC857W -50 BC858W -30 Collector-Emitter Voltage BC8

9.120. Size:447K umw-ic
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf pdf_icon

R UMW UMW BC857 SOT-23 Plastic-Encapsulate Transistors BC856A, B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage BC856 -80 V B

9.121. Size:781K anbon
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c bc859b bc859c.pdf pdf_icon

BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon Package outline Features Moisture sensitivity level 1 SOT-23 ESD rating human body model >4000 V,machine model >400 V Epitaxial plana chip construction Ideal for medium power application and switching Capable of 225mW power dissipation. Lead-free parts for green partner, ex

9.122. Size:2269K high diode
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf pdf_icon

BC856-8 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features SOT- 23 Ideally suited for automatic insertion For Switching and AF Amplifier Applications Marking BC856A=3A;BC856B=3B; BC857A=3E;BC857B=3F;BC857C=3G; BC858A=3J;BC858B=3K;BC858C=3L; C B E Item Symbol Unit Conditions Value BC856 Collector-Base Voltage -80 -50 BC857 V VC

9.123. Size:6174K msksemi
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf pdf_icon

www.msksemi.com BC856/57/58ABC Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Ideally suited for automatic insertion SOT-23 For Switching and AF Amplifier Applications DEVICE MARKING P/N MARK P/N MARK P/N MARK BC856A 3A BC856B 3B BC857A 3E BC857B 3F BC857C 3G BC858A 3J BC858B 3K BC858C 3L MAXIMUM RATINGS (T

9.124. Size:254K powersilicon
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf pdf_icon

DATA SHEET BC856A/B,BC857A/B/C,BC858A/B/C PNP GENERAL PURPOSE TRANSISTOR VOLTAGE -30 -65 V CURRENT -100 mA FEATURES PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC = -100mA LEAD FREE AND HALOGEN-FREE MECHANICAL DATA CASE SOT-23 TERMINALS SOLDERABLE PER MIL-STD-202G, METHOD 208 APPROX. WEIGHT 0.008

9.125. Size:954K cn salltech
bc856a bc857a bc858a bc856b bc857b bc858b bc857c bc858c.pdf pdf_icon

9.126. Size:135K cn shandong jingdao microelectronics
bc856a bc857a bc858a bc856b bc857b bc858b bc857c bc858c.pdf pdf_icon

Jingdao Microelectronics co.LTD BC856 BC857 BC858 BC856 BC857 BC858 SOT-23 PNP TRANSISTOR 3 FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit 2 BC856 -80 1.BASE Collector Base Voltage V BC8

9.127. Size:2188K cn yongyutai
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf pdf_icon

BC856/BC857/BC858 TRANSI STOR (PNP) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Ideaiiy suited for automatic insertion For switching and AF amplifier applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage -80 BC856 VCBO -50 V BC857 -30 BC858 Collector-Emitter Voltage -6

9.128. Size:550K cn zre
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf pdf_icon

BC856/BC857/BC858 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features Complementary to BC846/BC847/BC848 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications Marking Mechanical Data BC856A=3A BC856B=3B Small Outline Plastic Package BC857A=

9.129. Size:748K cn twgmc
bc856 bc857 bc858 bc859 bc860.pdf pdf_icon

BC856-BC860 BC856 BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications 1.BASE 2.EMITTER 3.COLLECTOR SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V B

9.130. Size:276K cn yangzhou yangjie elec
bc856aw bc856bw bc857aw bc857bw bc857cw bc858aw bc858bw bc858cw.pdf pdf_icon

RoHS RoHS COMPLIANT COMPLIANT BC856AW THRU BC858CW PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-323 Molding compound meets UL 94 V-

9.131. Size:909K cn yangzhou yangjie elec
bc856s.pdf pdf_icon

RoHS COMPLIANT BC856S Dual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage SOT-363 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking 5Ft Equivalent circuit 1 / 5 S-S3176 Yangzhou Y

9.132. Size:253K cn yangzhou yangjie elec
bc856awq bc856bwq bc857awq bc857bwq bc857cwq bc858awq bc858bwq bc858cwq.pdf pdf_icon

RoHS RoHS COMPLIANT COMPLIANT BC856AWQ THRU BC858CWQ PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications PNP General purpose switching and amplification Mechanical Data Case SOT-323 Terminals Tin plated

9.133. Size:299K cn yangzhou yangjie elec
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf pdf_icon

RoHS RoHS COMPLIANT COMPLIANT BC856/BC857/BC858 PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free Terminals T

9.134. Size:283K cn yangzhou yangjie elec
bc856aw bc856bw bc857aw bcb57bw bc857cw bc858aw bc858bw bc858cw.pdf pdf_icon

RoHS RoHS COMPLIANT COMPLIANT BC856AW THRU BC858CW PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-323 Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free Termina

9.135. Size:270K cn yangzhou yangjie elec
bc856aq bc856bq bc857aq bc857bq bc857cq bc858aq bc858bq bc858cq.pdf pdf_icon

RoHS COMPLIANT BC856Q THRU BC858Q PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications General purpose switching and amplification Mechanical Data SOT-23 Case Terminals Tin plated

9.136. Size:1082K cn dowo
bc856a bc857a bc858a bc856b bc857b bc858b bc857c bc858c.pdf pdf_icon

BC856-BC858 BC856A, B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage BC856 -80 V BC857 -50 BC858 -30 VCEO Collector-Emitter Voltage B

9.137. Size:629K cn doeshare
bc856a bc857a bc858a bc856b bc857b bc858b bc857c bc858c.pdf pdf_icon

BC856/BC857/BC858 BC856/BC857/BC858 SOT-23 Plastic-Encapsulate Transistors (PNP) General description SOT-23 Plastic-Encapsulate Transistors (PNP) FEATURES Complementary to BC846/BC847/BC848 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications SOT-23 Small Outline Plastic Package DEVICE MARKING COD

9.138. Size:1243K cn cbi
bc856w bc857w bc858w.pdf pdf_icon

Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES SOT-323 Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Unit Collector-Base Voltage BC856W -80 VCBO V BC857W -50 BC858W -30 Collector-Emitter Voltage BC856W -65

9.139. Size:1081K cn cbi
bc856dw.pdf pdf_icon

DUAL TRANSISTOR (PNP+PNP) Two transistors in one package 6 5 4 Reduces number of components and board space No mutual interference between the transistors 1 2 3 MARKING 5Ft

9.140. Size:327K cn fosan
bc856a bc857a bc858a bc856b bc857b bc858b bc857c bc858c.pdf pdf_icon

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD BC856/BC857/BC858 FEATURES PNP General Purpose Transistor MAXIMUM RATINGS Characteristic Symbol GM856A,B GM857A,B,C GM858A,B,C Unit (BC856A,B) (BC857A,B,C) (BC858A,B,C) Collector-Emitter Voltage V -65 -45 -30 Vdc CEO C

9.141. Size:445K cn hottech
bc856.pdf pdf_icon

BC856 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to BC846 Ideally suited for automatic insertion For switching and AF amplifier applications Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless othe

9.142. Size:486K cn hottech
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf pdf_icon

Plastic-Encapsulate Transistors (PNP) FEATURES BC856A/B (PNP) BC857A/B/C Ideally suited for automatic insertion BC858A/B/C (PNP) For Switching and AF Amplifier Applications Marking BC856A BC856B BC857A BC857B 3A 3B 3E 3F BC857C BC858A BC858B BC858C 1. BASE 3G 3J 3K 3L 2. EMITTER SOT-23 3. COLLECTO MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit BC8

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