Биполярный транзистор BC858BW-G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BC858BW-G
Маркировка: 3K
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hfe): 220
Корпус транзистора: SOT323
Аналоги (замена) для BC858BW-G
BC858BW-G Datasheet (PDF)
bc858bw-g bc857bw-g.pdf
Small Signal TransistorBC856AW-G Thru. BC858CW-G (PNP)RoHS DeviceFeatures -Ideally suited for automatic insertion -For Switching and AF Amplifier ApplicationsSOT-323 -Power dissipationPCM: 0.15W (@TA=25C)0.087 (2.20)0.079 (2.00) -Collector current3ICM: -0.1A -Collector-base voltage0.053(1.35)0.045(1.15)VCBO: BC856W= -80VBC857W= -50V1 20.006 (0.15)BC85
bc858bw-b bc858bw.pdf
BC858BW / BC858B Transistors PNP General Purpose Transistor BC858BW / BC858B External dimensions (Unit : mm) Features 1) BVCEO
bc858bw bc858b.pdf
BC858BW / BC858BTransistorsPNP General Purpose TransistorBC858BW / BC858B External dimensions (Units : mm) Features1) BVCEO
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BC856...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20
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BC857...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC857BL3 is not qualified according AEC Q101Type Marking Pin
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BC856AW THRU BC858CWFeatures Halogen free available upon request by adding suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral Purpose Compliant. See Ordering Information)TransistorsMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Tempera
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BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement
bc858bwt1g.pdf
BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement
lbc858bwt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconThese transistors are designed for general purpose CWT1Gamplifier applications. They are housed in the SOT323/LBC858AWT1G, BWT1GSC70 which is designed for low power surface mountCWT1Gapplications.FeaturesS-LBC856AWT1G, BWT1GWe declare that the material of product c
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/LBC858AWT1G, BWT1GSC70 which is designed for low power surface mountCWT1Gapplications.S-LBC856AWT1G, BWT1GFeaturesWe declare that the material of product
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BC856AW ~ BC859CWPNP GENERAL PURPOSE TRANSISTORS30/45/65 Volts POWER 250 mWattsVOLTAGEFEATURES General purpose amplifier applications PNP epitaxial silicon, planar design Collector current IC = 100mA Complimentary (NPN) Devices : BC846AW/BC847AW/BC848AW/BC849BW Series Lead free in comply with EU RoHS 2011/65/EU directives Green molding compound as per IEC
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RoHS RoHSCOMPLIANT COMPLIANTBC856AW THRU BC858CW PNP Transistor Features Epoxy meets UL-94 V-0 flammability ratingHalogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL 94 V-
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RoHS RoHSCOMPLIANT COMPLIANTBC856AWQ THRU BC858CWQ PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications PNP General purpose switching and amplification Mechanical Data Case: SOT-323 Terminals: Tin plated
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RoHS RoHSCOMPLIANT COMPLIANTBC856AW THRU BC858CW PNP Transistor Features Epoxy meets UL-94 V-0 flammability ratingMoisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free Termina
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050