BC858CDXV6T1G. Аналоги и основные параметры

Наименование производителя: BC858CDXV6T1G

Маркировка: 3L

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.357 W

Макcимально допустимое напряжение коллектор-база (Ucb): 30 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 100 MHz

Ёмкость коллекторного перехода (Cc): 4.5 pf

Статический коэффициент передачи тока (hFE): 420

Корпус транзистора: SOT563

 Аналоги (замена) для BC858CDXV6T1G

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BC858CDXV6T1G даташит

 ..1. Size:55K  onsemi
 bc858cdxv6t1g.pdf pdf_icon

BC858CDXV6T1G

BC858CDXV6T1, BC858CDXV6T5 Dual General Purpose Transistor PNP Dual http //onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low (3) (2) (1) power surface mount applications. Features Q1 Q2 These are Pb-Free Devices MAXIMUM RATINGS (4) (5) (6) Rating Symbol Value Unit Collector -Emitter Voltag

 2.1. Size:56K  onsemi
 bc858cdxv6t1-5.pdf pdf_icon

BC858CDXV6T1G

BC858CDXV6T1, BC858CDXV6T5 Dual General Purpose Transistor PNP Dual http //onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low (3) (2) (1) power surface mount applications. Features Q1 Q2 These are Pb-Free Devices MAXIMUM RATINGS (4) (5) (6) Rating Symbol Value Unit Collector -Emitter Voltag

 7.1. Size:82K  onsemi
 bc856bdw1t1g bc857bdw1t1g bc857cdw1t1g bc858cdw1t1g.pdf pdf_icon

BC858CDXV6T1G

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series www.onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 These transistors are designed for general purpose amplifier CASE 419B STYLE 1 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (3) (2) (1) Features S

 7.2. Size:156K  onsemi
 bc856bdw1t1g sbc856bdw1t1g bc857bdw1t1g sbc857bdw1t1g bc857cdw1t1g sbc857cdw1t1g bc858cdw1t1g.pdf pdf_icon

BC858CDXV6T1G

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series www.onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 These transistors are designed for general purpose amplifier CASE 419B STYLE 1 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (3) (2) (1) Features S

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