Справочник транзисторов. BC858CLT3G

 

Биполярный транзистор BC858CLT3G Даташит. Аналоги


   Наименование производителя: BC858CLT3G
   Маркировка: 3L
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.225 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 4.5 pf
   Статический коэффициент передачи тока (hfe): 420
   Корпус транзистора: SOT23
 

 Аналог (замена) для BC858CLT3G

   - подбор ⓘ биполярного транзистора по параметрам

 

BC858CLT3G Datasheet (PDF)

 0.1. Size:159K  lrc
lbc856alt3g lbc856blt3g lbc857alt1g lbc857blt3g lbc857clt1g lbc858alt1g lbc858blt3g lbc858clt3g lbc859blt1g lbc859clt3g.pdfpdf_icon

BC858CLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

 0.2. Size:234K  lrc
lbc858alt1g lbc858alt1g lbc858blt1g lbc858blt3g lbc858clt1g lbc858clt3g lbc859blt1g lbc859blt1g lbc859clt1g lbc859clt3g.pdfpdf_icon

BC858CLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

 6.1. Size:209K  onsemi
bc856alt1g bc856blt1g bc857alt1g bc857blt1g bc857clt1g bc858alt1g bc858blt1g bc858clt1g bc859blt1g bc859clt1g.pdfpdf_icon

BC858CLT3G

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureswww.onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS (TA = 25C unless otherwise noted)2

 6.2. Size:86K  onsemi
nsvbc858clt1g.pdfpdf_icon

BC858CLT3G

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureshttp://onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2EMITTERMAXIMUM RATINGS (TA = 25C unless other

Другие транзисторы... BC858AW-G , BC858AWT1G , BC858BLT1G , BC858BLT3G , BC858BW-G , BC858BWT1G , BC858CDXV6T1G , BC858CLT1G , BD135 , BC858CW-G , BC858LT1 , BC868-10 , BC868-16 , BCM61B , BCM62B , BCM846BS , BCM847BS .

History: NSV40300MZ4T1G | MMBT2222AE | SE8002 | CV12253L-O

 

 
Back to Top

 


 
.