Справочник транзисторов. BCW32LT1G

 

Биполярный транзистор BCW32LT1G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BCW32LT1G
   Маркировка: D2
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.225 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 32 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 32 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Ёмкость коллекторного перехода (Cc): 4 pf
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: SOT23

 Аналоги (замена) для BCW32LT1G

 

 

BCW32LT1G Datasheet (PDF)

 ..1. Size:188K  onsemi
bcw32lt1g.pdf

BCW32LT1G
BCW32LT1G

BCW32LT1GGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emit

 0.1. Size:96K  onsemi
nsvbcw32lt1g.pdf

BCW32LT1G
BCW32LT1G

BCW32LT1GGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-E

 6.1. Size:192K  onsemi
bcw32lt1-d.pdf

BCW32LT1G
BCW32LT1G

BCW32LT1GGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR31BASEMAXIMUM RATINGSRating Symbol Value Unit2Collector-Emitter Voltage VCEO 32 VdcEMITTERCollector-Base Voltage VCBO 32 VdcEmitter-Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 100 mAdc3S

 9.1. Size:112K  philips
bcw31 bcw32 bcw33 2.pdf

BCW32LT1G
BCW32LT1G

DISCRETE SEMICONDUCTORS DATA SHEETBCW31; BCW32; BCW33NPN general purpose transistorsProduct data sheet 2004 Feb 06Supersedes data of 2000 Jul 04NXP Semiconductors Product data sheetBCW31; BCW32; NPN general purpose transistorsBCW33FEATURES PINNING Low current (100 mA)PIN DESCRIPTION Low voltage (32 V).1 base2 emitterAPPLICATIONS3 collector General

 9.2. Size:49K  philips
bcw31 bcw32 bcw33.pdf

BCW32LT1G
BCW32LT1G

DISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D088BCW31; BCW32; BCW33NPN general purpose transistorsProduct specification 2000 Jul 04Supersedes data of 1999 Apr 13Philips Semiconductors Product specificationNPN general purpose transistors BCW31; BCW32; BCW33FEATURES PINNING Low current (100 mA)PIN DESCRIPTION Low voltage (32 V).1 base2 emitterAPPLICATIONS

 9.3. Size:85K  fairchild semi
bcw32.pdf

BCW32LT1G
BCW32LT1G

BCW32NPN General Purpose Amplifier This device is designed for general purpose applications at collector 3currents to 300mA. Sourced from process 10.2SOT-231Mark: D21. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 32 VVCBO Collector-Base Voltage 32 VVEBO Emitte

 9.4. Size:313K  nxp
bcw31 bcw32 bcw33.pdf

BCW32LT1G
BCW32LT1G

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.5. Size:27K  diodes
bcw31 bcw32 bcw33.pdf

BCW32LT1G

SOT23 NPN SILICON PLANAR BCW31BCW32SMALL SIGNAL TRANSISTORSBCW33ISSUE 2 - JUNE 1995 T I D T I D D D D E D D C T T BABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI i V I V V I V V II i V T V I I i V I V I

 9.6. Size:77K  cdil
bcw31 bcw32 bcw33.pdf

BCW32LT1G
BCW32LT1G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BCW31 BCW32BCW33SILICON PLANAR EPITAXIAL TRANSISTORSNPN transistorsMarkingPACKAGE OUTLINE DETAILSBCW31 = DlALL DIMENSIONS IN mmBCW32 = D2BCW33 = D3Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSBCW31 BCW32 B

 9.7. Size:193K  kec
bcw31 bcw32.pdf

BCW32LT1G

SEMICONDUCTORBCW31/32TECHNICAL DATAEPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERSComplementary to BCW29/30._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25)J 0.13+0.10/-0.05K 0.00 ~ 0.10CHARACTERISTIC SYMBOL RATING

 9.8. Size:895K  kexin
bcw31 bcw32 bcw33.pdf

BCW32LT1G
BCW32LT1G

SMD Type TransistorsNPN TransistorsBCW31~BCW33 (KCW31~KCW33)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Low current (100 mA) Low voltage (32 V).1 2 PNP complements: BCW29 and BCW30.+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Ba

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: FJP5027N

 

 
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