Spec. No. : C157J3 Issued Date : 2014.12.03 CYStech Electronics Corp.Revised Date : 2014.12.04 Page No. : 1/7 PNP Epitaxial Planar Silicon Transistor BTA2039J3Features Large current capability Very low saturation voltage Low collector-to-emitter saturation voltage High speed switching Pb-free lead plating and halogen-free package Symbol OutlineT

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA20LT1/DGeneral Purpose AmplifierMMBTA20LT1NPN SiliconCOLLECTOR313BASE122EMITTERCASE 31808, STYLE 6MAXIMUM RATINGSSOT23 (TO236AB)Rating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcEmitterBase Voltage VEBO 4.0 VdcCollector Current Continuous IC 100 mAdcTHERMAL C

NPN Silicon AF Transistor SMBTA 20 High DC current gain Low collector-emitter saturation voltageType Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SMBTA 20 s1C Q6800-A6477 B E C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 40 VEmitter-base voltage VEB0 4Collector current IC 100 mAPeak collector current ICM 200Pea

MMBTA20LT1General Purpose AmplifierNPN SiliconFeatures Pb-Free Package is Availablehttp://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value UnitCollector-Emitter Voltage VCEO 40 Vdc1BASEEmitter-Base Voltage VEBO 4.0 VdcCollector Current - Continuous IC 100 mAdc2THERMAL CHARACTERISTICSEMITTERCharacteristic Symbol Max UnitTotal Device Dissipation FR-5

Spec. No. : C306Y3 Issued Date : 2011.11.03 CYStech Electronics Corp.Revised Date : 2011.11.04 Page No. : 1/7 General Purpose PNP Epitaxial Planar Transistor BTA2029Y3Description The BTA2029Y3 is designed for use in driver stage of AF amplifier and general purpose amplification. High HFE and excellent linearity Complementary to BTC5658Y3. Pb-free package